B. Lepine < B. Lepley < B. Liautard

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 21.
[0-20] [0 - 20][0 - 21][20-20][20-40]

Ident.	Authors (with country if any)	Title
001A14 (1998)		Electrical properties of MIS structures with BN insulating layer
001C20 (1997)		Preparation of boron nitride thin films by microwave plasma enhanced CVD, for semiconductor applications
001E87 (1996)		Practical methods to improve DLTS data smoothing
001E90 (1996)		Photoluminescence intensity study of n-InP diodes in the accumulation regime
002036 (1995-08)		Interface state measurements by the DLS-82E lock-in spectrometer
002139 (1995)		Peak and side data analyses to measure deep levels by DLS-82E lock-in spectrometer
002187 (1995)		Electrical properties of Au/Bn[BN]/InP MIS diodes
002228 (1994-12)		Etude par spectroscopie DLTS des structures formées sur InP(n) par oxydation plasma
002366 (1994)		Plasma enhanced chemical vapour deposition of boron nitride onto InP
002372 (1994)		On the interface state distribution of BN on InP structures
002424 (1994)		Determination of interface state density on Au/Ta2O5/n-InP structures by different methods
002527 (1993)		Transport processes in Au/n-InP and Au/oxide/n-InP devices treated in oxygen multipolar plasma
002584 (1993)		Photoluminescence characterization of structures obtained by multipolar plasma oxidation of InP
002610 (1993)		New method of deep level transient spectroscopy analysis : a five emission rate method
002745 (1993)		A method to correct for leakage current effects in deep level transient spectroscopy measurements on Schottky diodes
002988 (1991)		Photoluminescence intensity study of n-InP MIS structures realized with a native oxide insulator film
002A37 (1991)		Experimental analysis of temperature dependence of deep-level capture cross-section properties at the Au oxidized InP interface
002D22 (1988)		Caractérisation de l'interface isolant InP formé en oxydation plasma par l'étude des transitoires de capacité DLTS et DDLTS
002E15 (1988)		Determination by optical DLTS of the distribution of states near the valence band of plasma oxidized n-type InP
002E96 (1987)		Preparation and electrical properties of thin native oxide double-layer insulator films on n-type InP
003014 (1986)		Interface properties of MIS structures prepared by plasma oxidation of n-InP

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List of associated KwdEn.i

Nombre de documents	Descripteur
15	Experimental study
12	Indium Phosphides
11	MIS structure
8	Indium phosphides
7	Gold
6	DLTS
6	III-V compound
5	Interface electron state
5	Oxidation
5	Theoretical study
5	Voltage current curve
4	Boron nitrides
4	Characterization
4	Deep level transient spectrometry
4	Semiconductor materials
4	Voltage capacity curve
3	Binary compound
3	CV characteristic
3	Density of states
3	Ellipsometry
3	Interface
3	Optical properties
3	Photoluminescence
2	Bias voltage
2	Chemical vapor deposition
2	Deep level
2	Deep level transient spectroscopy
2	Defect states
2	Dielectric materials
2	Electric contact
2	Electrical properties
2	Inorganic compound
2	MOS structure
2	Measuring methods
2	Optoelectronic device
2	Oxide layer
2	Photoelectron spectroscopy
2	Schottky barrier diode
2	Schottky barrier diodes
2	Semiconductor oxide contact
2	Silicon
2	Thin film
2	Thin films
1	Activation energy
1	Arrhenius equation
1	Binary compounds
1	Boron Nitrides
1	Boron complexes
1	Boron nitride
1	CVD
1	Charge carrier recombination
1	Charge carrier trapping
1	Chemical composition
1	Corrections
1	Crystalline structure
1	Czochralski method
1	Data smoothing
1	Deep energy levels
1	Electrical characteristic
1	Electrical insulation
1	Electronic structure
1	Energy gap
1	Energy-level density
1	Experimental test
1	Fermi level
1	Growth mechanism
1	Hysteresis
1	Indium phosphide
1	Infrared spectrometry
1	Intensity
1	Interface properties
1	Interface states
1	Interfaces
1	Leakage current
1	Liquid encapsulation
1	Low temperature
1	MIS devices
1	MIS diode
1	MIS junctions
1	MIS structures
1	Majority carrier
1	Material testing
1	Metal semiconductor field effect transistor
1	Microelectronic fabrication
1	Microelectronic processing
1	Microelectronics
1	Microwave radiation
1	Minority carrier
1	Modified chemical vapor deposition
1	Modulation
1	N type conductivity
1	N type semiconductor
1	N-type conductors
1	PECVD
1	Passivation
1	Photoelectron emission
1	Plasma
1	Preparation
1	Refraction index
1	Refractive index

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