B. Lamare < B. Lambert < B. Larrey

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 38.
[0-20] [0 - 20][0 - 38][20-37][20-40]

Ident.	Authors (with country if any)	Title
000272 (2010)		Reliability of high voltage/high power L/S-band Hbt technology
000F28 (2002)		Room temperature laser emission of 1.5 μm from InAs/InP(311)B quantum dots
001093 (2001-06-25)		High-speed 1.55 μm Fe-doped multiple-quantum-well saturable absorber on InP
001099 (2001-05-14)		Wetting layer carrier dynamics in InAs/InP quantum dots
001109 (2001-03-19)		Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm
001419 (2000)		Monolayer coverage effects on size and ordering of self-organized InAs islands grown on (1 13)B InP substrates
001513 (1999-11-29)		Carrier dynamics of self-assembled InAs quantum dots on InP (311)B substrates
001568 (1999-05-31)		Wavelength tuning of InAs quantum dots grown on (311)B InP
001586 (1999-03-22)		Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113)B substrate
001593 (1999-02-01)		Spontaneous emission from InAs/GaSb quantum wells grown by molecular beam epitaxy
001668 (1999)		Self-organized InAs islands on InP(311)B substrates emitting around 1.55 μm
001750 (1999)		Elastic relaxation phenomena in compressive Ga0.2In0.8As grown on (0 0 1) and (1 1 3)B InP at low lattice mismatch
001820 (1998-10-15)		Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP
001918 (1998)		The effect of the growth procedure and the InAs amount on the formation of strain-induced islands in the InAs/InP(001) system
001998 (1998)		High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5-1.6 μm
001A63 (1997-11-10)		Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100)
001B14 (1997-06-30)		Fe-doped InGaAs/InGaAsP photorefractive multiple quantum well devices operating at 1.55 μm
001B42 (1997-03-24)		Photorefractive multiple quantum well device using quantum dots as trapping zones
001D21 (1997)		photodiffraction in InGaAs/InGaAsP multiple quantum wells enclosed in a microcavity
001D87 (1996-06-17)		Photorefractive p-i-n diode quantum well operating at 1.55 μm
001E72 (1996)		Structural aspects of the growth of InAs islands on InP substrate

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List of associated KwdEn.i

Nombre de documents	Descripteur
34	Experimental study
21	Photoluminescence
17	Semiconductor materials
13	Inorganic compound
12	III-V semiconductors
11	Indium compounds
10	Indium Phosphides
9	Indium arsenides
8	Semiconductor quantum dots
7	Indium phosphides
6	Gallium arsenides
6	Semiconductor growth
6	Temperature
5	Atomic force microscopy
5	Impurity
5	Island structure
5	Quantum dots
4	Binary compounds
4	Chemical beam epitaxy
4	Electron paramagnetic resonance
4	Epitaxy
4	GSMBE method
4	Hall effect
4	Molecular beam epitaxy
4	Semiconductor epitaxial layers
4	Semiconductor quantum wells
4	TEM
4	Ytterbium
3	Charge carrier concentration
3	Charge carrier trapping
3	Crystal growth from vapors
3	Donor center
3	Energy gap
3	Erbium
3	Heterojunctions
3	III-V compound
3	Impurity density
3	Iron
3	Low temperature
2	Activation energy
2	Characterization
2	Charge carrier mobility
2	Crystal growth
2	Deep level transient spectrometry
2	Defect level
2	Dimensions
2	Elasticity
2	Electrical conductivity
2	Excited states
2	Excitons
2	Gallium compounds
2	Growth from liquid
2	Impurity level
2	Ion implantation
2	Mismatch lattice
2	Monolayers
2	Multiwave mixing
2	N type conductivity
2	Photorefractive effect
2	Single crystal
2	Spatial distribution
2	Substrates
2	Ternary compound
2	Ternary compounds
2	Time resolved spectra
1	Acceptor center
1	Aluminium Antimonides
1	Aluminium Gallium Arsenides Mixed
1	Amorphization
1	Annealing
1	Auger electron spectra
1	Band structure
1	Base emitter junction
1	Buffer layer
1	Carrier mean free path
1	Codoping
1	Complex defect
1	Compressive stress
1	Coverage rate
1	Crystal orientation
1	Czochralski method
1	Damaging
1	Deep level optical spectrometry
1	Density
1	Diffraction efficiency
1	Diffraction gratings
1	Dislocation
1	Doping
1	Durability
1	Elastic relaxation mechanism
1	Electro-optical modulation
1	Electromagnetic wave diffraction
1	Electron mobility
1	Electron transitions
1	Electron traps
1	Electronic transition
1	Electrons
1	Electroreflection
1	Epitaxial layers
1	Excitation

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