Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « B. Jusserand »
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B. Jouault < B. Jusserand < B. K Nstler  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
000783 (2006) Piezoelectric semiconductor acoustic cavities
001F26 (1996) InAs/GaAs quantum boxes obtained by self-organized growth: intrinsic electronic properties and applications
001F28 (1996) Improved stability of C-doped GaAs grown by chemical beam epitaxy for heterojunction bipolar transistor applications
002127 (1995) Role of the substrate deoxidation process in the growth of strained InAs/InP heterostructures
002129 (1995) Raman spectroscopy of adsorbates on semiconductors by means of SERS effect
002A01 (1991) Modulated molecular beam epitaxy : a successful route toward high quality highly strained heterostructures
002C35 (1989) Structural and optical properties of high quality InAs/GaAs short-period superlattices grown by migration-enhanced epitaxy
003013 (1986) Ion beam etching and surface characterization of indium phosphide

List of associated KwdEn.i

Nombre de
documents
Descripteur
4Experimental study
4Semiconductor materials
3Photoluminescence
3Raman spectra
2Binary compounds
2Gallium Arsenides
2Gallium arsenides
2Indium Arsenides
2Indium arsenides
2Indium phosphides
2Inorganic compound
2Molecular beam epitaxy
2Raman scattering
1Acoustical phonons
1Adsorbed state
1Application
1Atomic layer method
1Backscattering
1Bipolar transistors
1CBE
1Carbon additions
1Cavities
1Charge carrier concentration
1Charge carriers
1Cooling
1Crystal growth
1Crystal growth from vapors
1Deoxidation
1Diffusion
1Doping
1Electron emission
1Electron-phonon interactions
1Electronic properties
1Engraving
1Epitaxial layers
1Experiments
1Fabrication property relation
1Gallium phosphides
1Growth mechanism
1Hall effect
1Heat treatments
1Heterojunction transistor
1Heterojunctions
1Impurity diffusion
1Indium Phosphides
1Inhomogeneous broadening
1Interfacial layer
1Ion beam etching
1Line broadening
1Liquid nitrogen
1Low temperature
1MMBE method
1Microelectronic fabrication
1Molecular beam condensation
1Morphology
1Multilayers
1Operating mode
1Overlayers
1Photoelasticity
1Piezoelectric semiconductors
1Pretreatment
1Quantum boxes
1Relaxation processes
1Reviews
1Roughness
1Ruthenium complexes
1SERS
1SIMS
1Sample holder
1Scanning electron microscopy
1Self organized growth
1Semiconducting gallium arsenide
1Semiconducting indium compounds
1Semiconductor growth
1Semiconductor quantum wells
1Silicon
1Silver
1Size fluctuations
1Stability
1Strained layer
1Strained superlattice
1Superlattice
1Surface
1Surface properties
1Surface treatments
1Ternary compounds
1Thermal energy
1Thermoemission
1Thick film
1Thin film
1Thin films
1Ultrafast carrier capture
1Ultrafast phenomena
1Wafers
1X ray diffraction

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
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