B. Gerard < B. Gil < B. Gilles

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List of bibliographic references

Number of relevant bibliographic references: 46.
[0-20] [0 - 20][0 - 46][20-40]

Ident.	Authors (with country if any)	Title
000411 (2009)		Optical, structural investigations and band-gap bowing parameter of GaInN alloys
000420 (2009)		Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties
000421 (2009)		MOVPE growth of InN buffer layers on sapphire
000438 (2009)		InN excitonic deformation potentials determined experimentally
000452 (2009)		Growth of InN films and nanostructures by MOVPE
000474 (2009)		Alternative precursors for MOVPE growth of InN and GaN at low temperature
000760 (2006)		Superconductivity of InN with a well defined Fermi surface
000896 (2005)		Raman scattering by the longitudinal optical phonon in InN : Wave-vector nonconserving mechanisms
000A05 (2005)		Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots
000A89 (2004)		Raman scattering in hexagonal InN under high pressure
000B71 (2004)		Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply
000B92 (2004)		Absorption and Raman scattering processes in InN films and dots
000C00 (2003-12-15)		Raman scattering in large single indium nitride dots: Correlation between morphology and strain
000C01 (2003-12-15)		Isoelectronic traps in heavily doped GaAs:(In,N)
000C30 (2003-07-15)		Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems
000E82 (2002-01-21)		Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes
000E99 (2002)		The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes
001114 (2001-03-12)		Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
001115 (2001-02-26)		High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
001142 (2001)		The dependence of the optical energies on InGaN composition
001187 (2001)		Optical properties of self-assembled InGaN/GaN quantum dots

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List of associated KwdEn.i

Nombre de documents	Descripteur
30	Semiconductor materials
25	Experimental study
24	Photoluminescence
18	Theoretical study
14	Ternary compounds
13	III-V semiconductors
12	Binary compounds
12	Inorganic compound
11	Indium nitrides
11	Quantum wells
10	Envelope function
10	Gallium arsenides
9	Indium arsenides
8	Gallium Indium Arsenides Mixed
7	Exciton
7	Gallium nitrides
7	MOCVD
7	MOVPE method
7	Thickness
6	Excitons
6	Optical reflection
6	Thin films
6	Time resolved spectra
6	Valence band
5	Band structure
5	Electronic structure
5	Energy gap
5	Gallium Arsenides
5	III-V compound
5	Indium compounds
5	Indium nitride
5	Optical transition
4	Band offset
4	Fluctuations
4	Gallium compounds
4	Gallium nitride
4	Growth mechanism
4	Indium Phosphides
4	Molecular beam epitaxy
4	Optical properties
4	Quantum dots
4	Quantum well
4	Raman spectra
4	Semiconductor quantum wells
4	Strained superlattice
4	VPE
3	Aluminium Gallium Arsenides Mixed
3	Band splitting
3	Chemical composition
3	Electron localization
3	High pressure
3	Hydrostatic pressure
3	Multiple quantum well
3	Optical phonons
3	Piezoelectricity
3	Semiconductor quantum dots
3	Spin orbit interaction
3	Strained quantum well
3	Tunnel effect
3	Uniaxial stress
3	Very low temperature
3	Wide band gap semiconductors
2	Ammonia
2	Atomic force microscopy
2	Carrier density
2	Charge carriers
2	Confinement
2	Donor center
2	Electric field effects
2	Electron hole pair
2	Electron-hole recombination
2	Epitaxial layers
2	Hamiltonian
2	Hole
2	Holes
2	Impurity states
2	Indium
2	Inorganic compounds
2	Interface states
2	Island structure
2	Level splitting
2	Line widths
2	Magnetic field
2	Magnetooptical reflection
2	Non radiative recombination
2	Optical modulation
2	Phonons
2	Pressure
2	Quantum effect
2	Radiative recombination
2	Reflectivity
2	Renormalization
2	Stark effect
2	Superlattice
2	Tight binding approximation
2	Variational methods
2	Visible reflection
1	Absorption spectra
1	Activation energy
1	Adatoms

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