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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « B. Fraisse »
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B. Fraboni < B. Fraisse < B. Francois  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
001209 (2001) MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 μm
001210 (2001) MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers
001442 (2000) High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers
001C36 (1997) Molecular beam epitaxy growth of 1.3 μm high-reflectivity AlGaAsSb/AlAsSb Bragg mirror
001D89 (1996-06-15) Shallow strained InxGa1-xAs/InyGa1-yAs superlattices embedded in p-i-n diodes: Structural properties and optical response
002348 (1994) Structural investigations of InGaAs/InGaAsSLSs for optoelectronic device applications
002664 (1993) Growth and characterization of In0.53Ga0.47As/InxGa1-xAs strained-layer superlattices

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Indium arsenides
5Experimental study
4Gallium arsenides
3Molecular beam epitaxy
3Semiconductor lasers
3Superlattices
3Ternary compounds
2Binary compounds
2Electronic structure
2Energy-level transitions
2Indium antimonides
2Infrared laser
2Laser diodes
2Output power
2Photoluminescence
2Quantum well lasers
2Quaternary compounds
2Semiconductor materials
1Absorption spectra
1Aluminium Antimonides arsenides
1Aluminium antimonides
1Aluminium arsenides
1Ambient temperature
1Barrier height
1CW lasers
1Compressive stress
1Crystal growth
1Crystal growth from vapors
1Crystal structure
1Distributed Bragg reflector (DBR) lasers
1Electromagnetic wave diffraction
1Epitaxial layers
1Epitaxy
1Gallium antimonides
1III-V semiconductors
1Indium Antimonides arsenides
1Indium phosphides
1Interband transitions
1Lattice parameters
1Light absorption
1Light reflection
1Mid infrared radiation
1Miniband
1Mirrors
1Multilayers
1Optoelectronic devices
1RHEED
1Semiconducting aluminum compounds
1Semiconducting indium phosphide
1Semiconductor device structures
1Strained quantum well
1Theoretical study
1Theory
1Thickness
1Thin films
1XRD
1p i n junctions

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "B. Fraisse" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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