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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « B. Fernier »
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B. Fak < B. Fernier < B. Fortin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
001C65 (1997) High temperature (Ga)InAsP/high band gap GaInAsP barriers 1.3 μm SL-MQW lasers grown by gas source MBE
001C68 (1997) High performance 1.3 μm SLMQW BRS lasers for 85°C operation
001E53 (1996) Fabrication de lasers InP de hautes performances en technologie 50 mm de diamètre
001F13 (1996) Leading-edge laser production using two-inch technology
002403 (1994) Grating fabrication anc characterization method for wafers up to 2 in
002752 (1993) 1.55 μm buried ridge stripe laser diodes grown by gas source molecular beam epitaxy
002888 (1992) High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy
002B56 (1990) High performance DFB-MQW lasers at 1•5 μm grown by GSMBE
002C02 (1990) 1.55 μm high-gain polarisation-insensitive semiconductor travelling wave amplifier with low driving current
002F61 (1987) 1,5 μm laser with high external quantum efficiency and controlled emission wavelength

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Epitaxy
4Indium Phosphides
4Semiconductor laser
4Semiconductor lasers
3Experimental study
3Gallium Indium Arsenides Mixed
3Gallium Indium Arsenides phosphides Mixed
3Indium phosphides
3Infrared radiation
3Microelectronic fabrication
3Molecular beam condensation
3Multiple quantum well
3Strained quantum well
3Threshold current
2Compressive stress
2Gallium arsenides
2Gallium phosphides
2Indium arsenides
2Laser
1Amplifier
1Binary compounds
1Broad area
1Characterization
1Congress
1Controlled atmosphere
1Crystal growth from vapors
1Current density
1Distributed feedback laser
1Distributed feedback lasers
1Doping
1Double heterojunction
1Electrical properties
1Epitaxial film
1Fabry Perot resonator
1Fabry-Perot resonators
1GSMBE method
1Gain
1Growth from vapor
1III-V compound
1Indium phosphide
1Infrared laser
1Injection laser
1Leading edge
1Models
1Molecular beam
1Ohmic contact
1Optoelectronic device
1Optoelectronic devices
1Quantum efficiency
1Quantum well
1Quaternary compounds
1Reactive ion etching
1Reflectivity
1Reliability
1Scanning electron microscopy
1Semiconductor device
1Semiconductor materials
1Step
1Technology
1Temperature effects
1Temperature range 273-400 K
1Wafer

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "B. Fernier" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "B. Fernier" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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{{Explor lien
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   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
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   |clé=    B. Fernier
}}
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