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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « B. Beaumont »
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B. Baylac < B. Beaumont < B. Bechevet  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
000E94 (2002) Vertical cavity InGaN LEDs grown by MOVPE
001146 (2001) Temperature dependent electroluminescence in GaN and InGaN/GaN LEDs
001446 (2000) Green electroluminescent (Ga, In, Al)N LEDs grown on Si (111)
001522 (1999-10-25) Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN
001701 (1999) Metal organic vapour phase epitaxy of GaN and lateral overgrowth
002561 (1993) Secondary ion mass spectroscopy study of the diffusion of Zn in Ga0.47In0.53As
002705 (1993) Diffusion of Zn across p-n junctions in Ga0.47In0.53As
002730 (1993) Carbon doping of GaxIn1-xAs by atmospheric pressure organometallic vapour phase epitaxy
002C73 (1989) Ga0,47In0.53As photovoltaic booster cells for tandem solar energy conversion
002F60 (1987) A InP lattice-matched Ga0.47In0.53 As cell for multispectral photovoltaics

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Experimental study
3Binary compound
3Gallium Indium Arsenides Mixed
3Gallium nitride
3Light emitting diode
3Semiconductor materials
3Ternary compound
2Charge carrier concentration
2Doping
2Impurity diffusion
2Indium nitride
2Inorganic compound
2MOVPE method
2Multiple quantum well
2Performance evaluation
2Solar cell
1Atmospheric pressure
1CVD
1Carbon
1Cavity resonator
1Charge carrier recombination
1Chemical composition
1Compensation
1Complex defect
1Concentration distribution
1Conversion rate
1Crystal growth
1Current voltage characteristics
1Dislocation density
1Dislocations (crystals)
1Distributed Bragg reflection
1Donor center
1Electrical properties
1Electrochemical method
1Electroluminescence
1Energy conversion
1Energy gap
1Epitaxy
1Formation
1Free carrier
1Gallium Indium Arsenides
1Gallium Nitrides
1Gallium arsenides
1Gallium compounds
1Gallium indium nitride
1Green electroluminescent diodes
1Growth from vapor
1Growth mechanism
1Heteroepitaxy
1III-V compound
1III-V semiconductors
1Impurity
1In situ
1Indium Nitrides
1Indium Phosphides
1Indium arsenides
1Indium compounds
1Injection laser
1Lateral growth
1Light emitting diodes
1MOCVD coatings
1Manufacturing process
1Microcavity
1Mismatch lattice
1Modeling
1Morphology
1Multijunction structure
1N type semiconductor
1Nitrides
1Optical characteristic
1Optimization
1Optoelectronic device
1Organometallic compound
1P type semiconductor
1Reflectometry
1SIMS
1Sapphire
1Secondary ion mass spectrometry
1Semiconducting gallium compounds
1Semiconducting silicon
1Semiconductor epitaxial layers
1Semiconductor growth
1Solid solution
1Substrate
1Substrates
1Surface
1Tellurium
1Temperature effect
1Theory
1Thin film
1Thin films
1Transport process
1VPE
1Voltage current curve
1Wide band gap semiconductors
1Zinc
1Zinc additions
1p n junction

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "B. Beaumont" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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