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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « A. Y. Cho »
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List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
001C37 (1997) Mid-infrared (8.5 μm) semiconductor lasers operating at room temperature
001C45 (1997) Long-wavelength (9.5-11.5 μm) microdisk quantum-cascade lasers
002051 (1995-05-15) Influence of electrode Fermi energy on interband tunneling
002519 (1993) Γ-X intervalley tunneling in InAs/AlSb resonant tunneling diodes
002568 (1993) Resonant and off-resonant phenomena in double-barrier interband tunneling structures
002964 (1991) Transverse magnetic field effects on the resonant tunneling current
002A20 (1991) High-pressure investigation of an (InAl)As-(InGa)As resonant tunnelling double-barrier structure
002B02 (1990) The (InGa)As-5InAl)As resonant tunnelling double barrier structure subjected to a transverse magnetic field
002F56 (1987) A study of parallel conduction and the quantum Hall effect in GaInAs-AlInAs heterojunctions using magnetotransport measurements under hydrostatic pressure
003010 (1986) Luminescence investigations of highly strained-layer InAs-GaAs superlattices
003037 (1986) Comparison of Auger recombination in GaInAs-AlInAs multiple quantum well structure and in bulk GaInAs

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Experimental study
5Aluminium Indium Arsenides Mixed
5Gallium Indium Arsenides Mixed
5Resonant tunnel effect
4Inorganic compound
4Semiconductor materials
4Solid solid interface
4Voltage current curve
3Indium Arsenides
2Aluminium Antimonides
2Double barrier structure
2Fermi level
2Heterojunction
2High field
2Hydrostatic pressure
2Indium arsenides
2Magnetic field
2Magnetoconductivity
2Semiconductor lasers
2Transport process
2Tunnel effect
1Aluminium antimonides
1Aluminium arsenides
1Application
1Asymmetry
1Auger recombination
1Band structure
1Bose-Einstein factor
1Confinement
1Current density
1Deformation
1Diode
1Disks
1Double barrier
1Effective mass
1Electrical conductivity
1Electrodes
1Electron tunneling
1Gallium Antimonides
1Gallium Arsenides
1Gallium antimonides
1Gallium arsenides
1Heterostructures
1IV characteristic
1Infrared radiation
1Interband process
1Interband transitions
1Light emission
1Light scattering
1Liquid helium
1Logarithmic function
1Magnetic field effects
1Magnetooscillatory properties
1Microlaser
1Multiple quantum well
1Near resonant optical phonon emission
1Negative differential conductivity
1Photoluminescence
1Pressure
1Quantum Hall effect
1Quantum effect
1Scaling law
1Semiconducting aluminum compounds
1Semiconducting gallium compounds
1Semiconducting indium phosphide
1Semiconductor device structures
1Semiconductor laser
1Semiconductor quantum wells
1Subband
1Superlattice
1Temperature
1Ternary compounds
1Theoretical study
1Threshold current
1Threshold current density
1Transverse field
1Vertical cascade transition quantum cascade laser
1Waveguides

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