IndiumV3, France, Analysis, indexItem, Author.i, A. Wilk

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.

Ident.	Authors (with country if any)	Title
000953 (2005)		High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
000A13 (2005)		CBr4 and be heavily doped InGaAs grown in a production MBE system
000A14 (2005)		As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system
000B74 (2004)		Characterization of As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system
001209 (2001)		MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 μm
001210 (2001)		MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers
001311 (2000-10-09)		Type-II InAsSb/InAs strained quantum-well laser diodes emitting at 3.5 μm
001335 (2000-05-01)		InAs(PSb)-based W quantum well laser diodes emitting near 3.3 μm
001435 (2000)		InAs/InAs(P,Sb) quantum-well laser structure for the midwavelength infrared region
001731 (1999)		GaInSb/AlGaAsSb strained quantum well semiconductor lasers for 1.55 μm operation

List of associated KwdEn.i

Nombre de documents	Descripteur
8	Experimental study
8	Molecular beam epitaxy
6	III-V semiconductors
4	Crystal growth from vapors
4	Indium arsenides
4	Photoluminescence
4	Quantum well lasers
3	Current density
3	Gallium arsenides
3	Laser diodes
3	Ternary compounds
2	Aluminium antimonides
2	Binary compounds
2	Doping
2	High electron mobility transistor
2	IV characteristic
2	Indium compounds
2	Semiconductor lasers
2	Strained quantum well
1	Aluminium Antimonides arsenides
1	Aluminium arsenides
1	Application
1	Arsenic additions
1	Beryllium additions
1	Bipolar transistors
1	Buffer layer
1	Carbon additions
1	Carrier mobility
1	Cladding (coating)
1	Composition effects
1	Compressive stress
1	Continuous wave
1	Doped materials
1	Electroluminescence
1	Energy gap
1	Epitaxial film
1	Epitaxial layers
1	Gallium antimonides
1	Gallium phosphide
1	Growth rate
1	Hall mobility
1	Heterojunctions
1	Hole density
1	III-V compound
1	Indium Antimonides arsenides
1	Indium additions
1	Indium antimonides
1	Indium phosphide
1	Infrared laser
1	Infrared radiation
1	Injection current
1	Interface
1	Large scale system
1	Light emission
1	Memory effect
1	Metal-organic vapor phase deposition
1	Metallorganic chemical vapor deposition
1	Microelectronic fabrication
1	Mid infrared radiation
1	Midwavelength infrared regions
1	Morphology
1	Multilayers
1	Multiple quantum well
1	Nanostructured materials
1	Optical microcavity
1	Optical waveguides
1	Optimization
1	Output power
1	Production system
1	Quantity ratio
1	Quantum dots
1	Quantum efficiency
1	Quantum yield
1	Quaternary compounds
1	RHEED
1	Reflection spectrum
1	SCH lasers
1	Semiconducting indium compounds
1	Semiconductor materials
1	Semiconductor quantum wells
1	Silicon addition
1	Solid source molecular beam epitaxy
1	Stacking sequence
1	Substrates
1	Temperature dependence
1	Theory
1	Thin film
1	Thin films
1	Threshold current
1	Vertical cavity laser
1	Waveguide lasers

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   |flux=    France
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   |index=    Author.i
   |clé=    A. Wilk
}}

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Serveur d'exploration sur l'Indium - Analysis (France)Index « Auteurs » - entrée « A. Wilk »

List of bibliographic references

List of associated KwdEn.i

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « A. Wilk »