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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « A. Trampert »
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A. Toureille < A. Trampert < A. Trassoudaine  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000430 (2009) Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy
000669 (2007) Interface analysis of InAs/GaSb superlattice grown by MBE
000676 (2007) High-density InSb-based quantum dots emitting in the mid-infrared
000769 (2006) Structural and optical properties of InSb quantum dots for mid-IR applications
000945 (2005) Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes
000A37 (2004-04-05) Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells
000C26 (2003-08-15) Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy
000C37 (2003-05-19) Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells
000C51 (2003-03-24) GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm
000D86 (2003) Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE
002055 (1995-04-24) Novel plastic strain-relaxation mode in highly mismatched III-V layers induced by two-dimensional epitaxial growth
002113 (1995) Surfactant-mediated molecular-beam epitaxy of III-V strained-layer heterostructures

List of associated KwdEn.i

Nombre de
documents		Descripteur
9III-V semiconductors
9Molecular beam epitaxy
7Experimental study
7Photoluminescence
7Transmission electron microscopy
5Gallium arsenides
5Indium arsenides
4Gallium compounds
4Indium compounds
4Semiconductor quantum wells
3Annealing
3Crystal growth from vapors
3Gallium antimonides
3III-V compound
3Indium antimonides
3Quantum wells
2Adatoms
2Antimony
2Diffusion
2Growth mechanism
2Interfaces
2Laser diodes
2Localized states
2Microstructure
2Nanostructured materials
2Nanostructures
2Optical properties
2Quantum dots
2Semiconductor growth
2Superlattices
2Ternary compounds
2Wide band gap semiconductors
1Absorbance
1Absorption coefficients
1Ambient temperature
1Atomic force microscopy
1Binary compounds
1Chemical composition
1Conduction bands
1Crystal microstructure
1Crystal structure
1Electroluminescence
1Electron microscopy
1Electronic properties
1Epitaxial layers
1Experimental design
1Gallium Arsenides nitrides
1Gallium phosphide
1Heterojunctions
1Heterostructures
1High density
1High-resolution methods
1Homojunctions
1Image resolution
1Indium Arsenides nitrides
1Infrared detection
1Infrared detectors
1Interface properties
1Interface roughness
1Interface structure
1Light emitting diodes
1Line widths
1Mid infrared radiation
1Miscibility
1Misfit dislocations
1Monolayers
1Morphology
1Nonradiative transitions
1Performance
1Performance evaluation
1Property structure relationship
1Quantum well lasers
1Quantum yield
1RHEED
1Radiation sources
1Rapid thermal annealing
1Roughness
1Semiconductor heterojunctions
1Semiconductor lasers
1Semiconductor materials
1Solid solutions
1Solid-solid interfaces
1Spatial resolution
1Stress relaxation
1Surfactants
1TEM
1Temperature measurement
1Thermal stability
1Threshold current
1XRD

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "A. Trampert" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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