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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « A. Tabata »
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List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
002272 (1994-07) Optical properties of InAs/InP surface layers formed during the arsenic stabilization process
002351 (1994) Strain relaxation studied by photoluminescence by double crystal X-ray diffraction measurements in strained InGaAs
002536 (1993) Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells
002565 (1993) Room-temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs layers grown on InP substrates
002566 (1993) Room temperature photoreflectance as a powerful tool to characterize the crystalline quality of InAlAs layers grown on InP substrates
002581 (1993) Photoreflectance studies of lattice-matched and strained InGaAs/InAlAs single quantum wells
002582 (1993) Photoluminescence study of the 2D electron gas formed at the interface of strained InGaAs/InP single heterostructures
002586 (1993) Photo-induced current transient spectroscopy of Al0.48In0.52As semi-insulating layers grown on InP by molecular beam epitaxy
002592 (1993) Optical studies of InP/InAlAs/InP interface recombinations
002599 (1993) Optical characterization of InP/InAlAs/InP interfaces grown by MOVPE
002622 (1993) Materials problems for the development of InGaAs/InAlAs HEMT technology
002726 (1993) Characterization of lattice-matched and strained GaInAs/AlInAs HEMT structures by photoluminescence spectroscopy
002747 (1993) A comprehensive optimization of InAlAs molecular beam epitaxy for InGaAs/InAlAs HEMT technology
002994 (1991) Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor-phase epitaxy

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Photoluminescence
7Experimental study
7Semiconductor materials
6Indium arsenides
6Optical properties
5Gallium Indium Arsenides Mixed
5Molecular beam epitaxy
5Ternary compounds
4Aluminium Indium Arsenides Mixed
4Aluminium arsenides
4Indium Phosphides
3Epitaxy
3High electron mobility transistor
3Inorganic compound
3Interface
2Aluminium Indium Arsenides
2Characterization
2Crystal growth
2Gallium arsenides
2Heterojunction
2Indium phosphides
2Interface electron state
2Laser beam
2Low temperature
2Molecular beam condensation
2Optical transition
2Quantum wells
2Temperature dependence
2Thin film
2Thin films
1Amplitude phase
1Atmospheric pressure
1Band offset
1Band structure
1Binary compounds
1Charge carrier mobility
1Chemical composition
1Conduction band
1Conduction bands
1Crystal defect
1Crystal perfection
1Dislocation
1Dislocation density
1Effective mass
1Electrical properties
1Electron gas
1Electron mobility
1Electronic component
1Energy band
1Energy-level transitions
1Epitaxial film
1Exciton
1Extended defect
1Heat treatments
1High temperature
1III-V compound
1Impurity
1Indium Arsenides
1Infrared spectra
1Interband transition
1Interfaces
1Island structure
1Lattice relaxation
1Least squares method
1Line widths
1Microstructure
1Mismatch lattice
1Multijunction structure
1Multiple layer
1Multiple quantum well
1Optical modulation
1Optical reflection
1Optoelectronic device
1Organometallic compound
1Passivation
1Performance
1Phase transformation
1Photo-induced transient spectroscopy
1Photoelectron spectroscopy
1Preparation
1Quantum well
1Reflection spectrum
1Roughness
1Semiconductor device
1Silicon
1Spectral reflectance
1Stacking fault density
1Strained quantum well
1Strains
1Support
1Surface layers
1Surfaces
1Temperature
1Temperature measurement
1Temperature range 400-1000 K
1Thickness
1Transmission electron microscopy
1Vapor pressure
1X radiation
1XRD

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