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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « A. Segura »
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A. Secroun < A. Segura < A. Seigneurin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000445 (2009) High pressure and high magnetic field behaviour of free and donor-bound-exciton photoluminescence in InSe
000614 (2007) Transport measurements under pressure in III-IV layered semiconductors
000627 (2007) Structural and optical high-pressure study of spinel-type MnIn2S4
000681 (2007) GaS and InSe equations of state from single crystal diffraction
000718 (2007) Buildup of the InSe/M interface (M = Pd, Au) studied by X-ray photoemission and X-ray absorption spectroscopy
000811 (2006) Interdiffusion process in the InSe/Pt interface studied by angle- resolved photoemission
000A02 (2005) Crystal symmetry and pressure effects on the valence band structure of γ-InSe and ε-GaSe : Transport measurements and electronic structure calculations
000C74 (2003) Transport measurements in InSe under high pressure and high temperature: shallow-to-deep donor transformation of Sn related donor impurities
000C98 (2003) Specific features of the electronic structure of III-VI layered semiconductors: recent results on structural and optical measurements under pressure and electronic structure calculations
000F93 (2002) Investigation of the local structure of as-related acceptor centres in InSe by means of fluorescence-detected XAS
001498 (1999-12-15) Effects of pressure and temperature on the dielectric constant of GaS, GaSe, and InSe: Role of the electronic contribution
001547 (1999-08-01) High-pressure x-ray absorption study of InSe
001865 (1998-05-01) Tin-related double acceptors in gallium selenide single crystals
001B16 (1997-06-15) Investigation of conduction-band structure, electron-scattering mechanisms, and phase transitions in indium selenide by means of transport measurements under pressure
001C23 (1997) Photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy
002529 (1993) Time resolved photoluminescence of Cd-doped InSe

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Indium selenides
9Semiconductor materials
8Experimental study
6III-VI semiconductors
6Pressure effects
5Energy gap
4Hall effect
4High pressure
4X-ray absorption spectra
3Binary compounds
3Conduction bands
3Doping
3Electronic structure
3High-pressure effects
3Hole mobility
3Indium compounds
3Phase transformations
3Valence bands
2Absorption edge
2Absorption spectra
2Band structure
2Bond angle
2Bond lengths
2Density functional method
2Donor center
2Electrical conductivity
2Electrical resistivity
2Gallium compounds
2Gallium selenides
2Impurity states
2Inorganic compounds
2Photoemission
2Photoluminescence
2Semiconductor-metal boundaries
2Thermoelectric power
2XRD
1Ab initio calculations
1Acceptor center
1Acceptor donor pair
1Angular resolution
1Anisotropy
1Arsenic additions
1Bound exciton
1Cadmium
1Chemical bonds
1Compressibility
1Crystal structure
1Crystal symmetry
1Deep energy levels
1Deep level
1Defect density
1Deformation potential
1Diamagnetism
1EXAFS
1Effective mass
1Electrical conductivity transitions
1Electron density
1Electron gas
1Electron mobility
1Electron transfer
1Electron traps
1Electronic density of states
1Equations of state
1Excitation intensity
1Excitons
1Fermi level
1Fluorescence
1Gallium sulfides
1High-pressure solid-state phase transformations
1Impurities
1Impurity
1Indium Selenides
1Indium sulfides
1Inorganic compound
1Interdiffusion
1LEED
1Lattice parameters
1Layered crystals
1Local structure
1Low temperature
1Luminescence decay
1Magnetic field effects
1Manganese sulfides
1Molecular beam epitaxy
1Monocrystals
1N type conductivity
1NaCl structure
1Oscillations
1Permittivity
1Photoelectron spectroscopy
1Photovoltaic effects
1Polarization
1Polymorphism
1Refractive index
1Spinels
1Temperature
1Temperature dependence
1Theoretical study
1Thickness
1Thin films

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