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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « A. Scavennec »
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A. Scaveimec < A. Scavennec < A. Schalchli  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
001028 (2002) Effect of leakage current induced by B+H+ implantation in the isolation process for self passivated GaAlAs/GaInP/GaAs HBT
001216 (2001) Introduction of InP high speed electronics into optical fiber transmission systems and current technological limits
001343 (2000-03-01) Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor
001411 (2000) Output conductance dispersion and drain current transients in InP-HFETs: Observations and equivalent circuit model
001634 (1999) Triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications
001984 (1998) Investigation on base surface recombination in Self Passivated GaAlAs/GalnP/GaAs Heterojunction Bipolar Transistor
001E44 (1996) Photodiode de type Métal-Semiconducteur-Métal (MSM) sur substrat d'InP
002145 (1995) Monolithic integration of an InP based polarization diversity heterodyne photoreceiver with electrooptic adjustability
002396 (1994) InGaAsP channel HFET's on InP for OEIC applications
002526 (1993) UVCVD dielectric films for InP-based optoelectronic devices
002749 (1993) 3dB coupler-balanced pin pair JFET circuit integrated on InP for coherent detection
002A52 (1991) Double junction AllnAs/GaInAs multiquantum well avalanche photodiodes
002D08 (1988) Photodétecteurs pour transmissions par fibre optique à 1,3 μm-1,55 μm: état de l'art
002F04 (1987) Monolithic photoreceiver integrating GaInAs PIN/JFET with diffused junctions

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Indium Phosphides
5III-V compound
4Binary compound
4Gallium Arsenides
4Photodiode
4Ternary compound
3Experimental study
3Gallium Indium Arsenides Mixed
3High electron mobility transistors
3Junction field effect transistor
3Monolithic integrated circuit
3Semiconducting indium phosphide
2Aluminium Arsenides
2Avalanche diode
2Chemical vapor deposition
2Electrical characteristic
2Field effect transistor
2Gallium arsenides
2Heterodyne detection
2Heterojunction bipolar transistors
2Heterojunction transistor
2Impact ionization
2Indium Arsenides
2Integrated optoelectronics
2Microelectronic fabrication
2Optical receiver
2P i n diode
2Photodetector
2Photoreceptor
2Theory
1Absorption
1Aluminium Indium Arsenides Mixed
1Aluminium arsenides
1Aluminium compounds
1Application
1Avalanche
1Bipolar transistor
1Cadmium Mercury Tellurides Mixed
1Carrier mobility
1Coherent detection
1Computer simulation
1Current gain
1Dielectric materials
1Directional coupler
1Electric breakdown of solids
1Electric currents
1Electric potential
1Electroluminescence
1Electron transport properties
1Energy diagram
1Epitaxy
1Equivalent circuits
1Experimental test
1Experiments
1Field effect transistors
1Frequency response
1Gain
1Gallium Indium Arsenides phosphides Mixed
1Gallium Phosphides
1Gallium phosphide
1Germanium
1Graded junction
1Heterojunctions
1High breakdown voltage transistors
1Hole traps
1Hot carriers
1Hybrid integrated circuit
1III-V semiconductors
1Ideality
1Indium Phosphorus
1Indium compounds
1Indium phosphide
1Integrated circuit
1Integrated circuits
1Ion implantation
1Ionization of solids
1Kinks
1Leakage current
1Light transmission
1MESA technology
1MSM structure
1Microelectronic processing
1Modulators
1Molecular beam
1Monolithic integrated circuits
1Multilayered circuit
1Operation study
1Optical coupler
1Optical fiber
1Optical fibers
1Optical telecommunication
1Optimality criterion
1Optoelectronic device
1Optoelectronic transducers
1Optoelectronics
1P+ n junction
1PIN photodiode
1Parasitic effects
1Passband
1Passivation

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