Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « A. S. Barriere »
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A. Rupert < A. S. Barriere < A. S. G. Thornton  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000A03 (2005) Correlation between the Indium Tin Oxide morphology and the performances of polymer light-emitting diodes
000C13 (2003-10-15) Electrical characterization of InGaN/GaN light emitting diodes grown by molecular beam epitaxy
001E82 (1996) Rutherford backscattering spectrometry, particle induced X-ray emission and atomic force microscopy of InAs thin films grown on GaAs : a complementary study
002189 (1995) Electrical behaviour of epitaxial SrF2/InP(100) diodes
002542 (1993) Study of a chemical cleaning of InP(100) substrates by infrared absorption and nuclear reaction analysis
002869 (1992) Indium fluoride thin films prepared by sublimation under vacuum
002891 (1992) Heteroepitaxial growth and characterization of SrF2/(100)InP
002B60 (1990) Fluorine-gas treatment of InP(100) : physico-chemical characterization of the obtained components
002D20 (1988) Caractérisation physico-chimique et électrique de structures fluorure - semi-conducteur III-V (passivation de GaAs et InP)
002E23 (1988) Characterization of SrF2 thin films and of SrF2/InP structures
002F36 (1987) Electrical properties of SrF2/InP (100) diodes and SrF2 thin films
002F55 (1987) A study of the chemical oxide/InP interface by deep-level transient spectroscopy

List of associated KwdEn.i

Nombre de
documents
Descripteur
8Experimental study
7Indium Phosphides
5Thin film
4Inorganic compound
4Rutherford backscattering
3Crystal face
3Electrical properties
3MIS structure
3Semiconductor materials
3Strontium Fluorides
2Chemical composition
2Crystal growth
2Heterojunction
2III-V semiconductors
2Interface electron state
2Light emitting diodes
2Microstructure
2Oxidation
2Physicochemical properties
2Thickness
2Voltage capacity curve
2X ray diffraction
1Activation energy
1Ageing
1Aqueous solution
1Atomic force microscopy
1Backscattering
1Binary compounds
1Buffer layer
1Capacitance
1Chemical etching
1Conducting polymers
1Contamination
1Correlations
1Crystal defect
1Deep level transient spectrometry
1Defect level
1Degreasing
1Deoxidation
1Diode
1Diodes
1Electric conductivity
1Energy gap
1Fluorides
1Fluorine
1Gallium Arsenides
1Gallium compounds
1Gas solid adsorption
1Gas solid interface
1Growth from vapor
1Heat treatment
1Heteroepitaxy
1High temperature
1Hole density
1Hopping conduction
1Hysteresis
1III-V compound
1Impurity
1Indium Fluorides
1Indium arsenides
1Indium compounds
1Indium oxides
1Indium phosphides
1Infrared spectrometry
1Infrared spectrum
1Inorganic adsorbate
1Inorganic adsorbent
1Leakage currents
1Mass spectrometry
1Modulation
1Nuclear method
1Operating conditions
1Optical absorption
1Oxygen
1Passivation
1Performance
1Photoelectron spectrum
1Polycrystal
1Poole-Frenkel effect
1Preferred orientation
1Preparation
1Roughness
1Scanning electron microscopy
1Semiconductor epitaxial layers
1Semiconductor quantum wells
1Single crystal
1Stoichiometry
1Strontium fluorides
1Sublimation
1Substrates
1Support
1Surface cleaning
1Surface electron state
1Surface morphology
1Surface potential
1Surface properties
1Surface structure
1Surface treatment
1Surface treatments
1Surfaces

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