A. Rakovska < A. Ramdane < A. Ramdani

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 28.
[0-20] [0 - 20][0 - 28][20-27][20-40]

Ident.	Authors (with country if any)	Title
000172 (2011)		Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
000241 (2011)		Carrier wavefunction control in a dilute nitride-based quantum well-a quantum dot tunnel injection system for 1.3 μm emission
000412 (2009)		Optical properties and energy transfer in InGaAsN quantum well - InAs quantum dots tunnel injection structures for 1.3 μm emission
000510 (2008)		Recent advances in long wavelength quantum dot based lasers
000659 (2007)		Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy
000713 (2007)		Characterization of InAs quantum wires on (001)InP : Toward the realization of VCSEL structures with a stabilized polarization
000734 (2007)		1516 nm room temperature CW operation of quantum dot InAs/InP(311)B singlemode laser
000855 (2006)		Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers
000A08 (2005)		Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection
000A27 (2004-05-24)		Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates
000B45 (2004)		High frequency performance of 3-quantum well GaInNas/GaAs ridge waveguide lasers emitting at 1.35 micron
000B95 (2004)		9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm
000B96 (2004)		42 GHz bandwidth InGaAlAs/InP electro absorption modulator with a sub-volt modulation drive capability in a 50 nm spectral range
001006 (2002)		High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes
001492 (2000)		1.3 μm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, and influence of the re-growth temperature on the spectral response
001B96 (1997)		The role of N2 and H2 as carrier gas on the selective area MOVPE of InP-based heterostructures using TBAs and TBP as group-V sources
001C02 (1997)		Study of growth rate and composition variations in metalorganic vapour phase selective area epitaxy at atmospheric pressure and application to the growth of strained layer DBR lasers
001C11 (1997)		Selective area MOVPE growth of InP, InGaAs and InGaAsP using TBAs and TBP at different growth conditions
001D20 (1997)		20-Gb/s integrated DBR laser-EA modulator by selective area growth for 1.55-μm WDM applications
001E46 (1996)		Modulateurs électroabsorbants : applications pour les liaisons à haut débit
002000 (1995-11-01)		Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser-modulator integration

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List of associated KwdEn.i

Nombre de documents	Descripteur
13	Indium arsenides
9	Experimental study
9	Gallium arsenides
9	III-V compound
8	III-V semiconductors
8	Multiple quantum well
7	Indium phosphides
7	Quantum dots
7	Semiconductor lasers
6	Binary compounds
6	Semiconductor materials
5	Gallium phosphides
5	MOVPE method
5	Photoluminescence
5	Quantum wells
4	Experiments
4	Gallium Arsenides
4	Indium Arsenides
4	Indium Phosphides
4	Quantum dot lasers
4	Quaternary compound
4	Selective area
4	Semiconductor quantum wells
3	Distributed feedback laser
3	Electroabsorption modulator
3	Integrated optics
3	Integrated optoelectronics
3	Molecular beam epitaxy
3	Quaternary compounds
3	Semiconducting gallium arsenide
3	Strained quantum well
3	Ternary compounds
3	Threshold current
2	Charge carrier injection
2	Chemical composition
2	Chemical vapor deposition
2	Crystal growth from vapors
2	Current density
2	Distributed Bragg reflection
2	Distributed feedback lasers
2	Electroluminescence
2	Electrooptical modulator
2	Epitaxy
2	Gallium Indium Arsenides Mixed
2	Heterojunctions
2	Indium phosphide
2	Inorganic compounds
2	Light modulators
2	Manufacturing process
2	Masking
2	Microelectronic fabrication
2	Microelectronics
2	Monolithic integrated circuits
2	Nitrogen additions
2	Optical modulator
2	Optical properties
2	Optical pumping
2	Optical telecommunication
2	Optoelectronic device
2	Photoreflectance
2	Quantum well
2	Ridge waveguide
2	Selective growth
2	Semiconductor quantum dots
2	Ternary compound
2	Thickness
2	Tunnel effect
2	VPE
1	Absorption spectrum
1	Advanced technology
1	Aluminium
1	Aluminium arsenides
1	Aluminium compounds
1	Ambient temperature
1	Application
1	Bandwidth
1	Buried ridge structures (BRS)
1	Carrier gas
1	Cathodoluminescence
1	Charge carrier trapping
1	Circuit design
1	Circuit gain
1	Clock recovery
1	Coatings
1	Concentration distribution
1	Conduction bands
1	Continuous wave
1	Crystal orientation
1	Deformation
1	Density
1	Deposition process
1	Diffraction gratings
1	Diffusion coefficient
1	Diodes
1	Direct modulation
1	Dispersive spectrometry
1	Distributed Bragg reflector (DBR) lasers
1	Doped materials
1	Doping
1	Double layers

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