A. Polimeni < A. Ponchet < A. Popot

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 25.
[0-20] [0 - 20][0 - 25][20-24][20-40]

Ident.	Authors (with country if any)	Title
000274 (2010)		QD laser on InP substrate for 1.55 μm emission and beyond
000A65 (2004)		TEM measurement of the misfit stress by a curvature method in semiconducting epitaxial system
000A66 (2004)		TEM evaluation of strain and stress in III-V semiconductor epitaxial structures
000D90 (2003)		Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties
001568 (1999-05-31)		Wavelength tuning of InAs quantum dots grown on (311)B InP
001586 (1999-03-22)		Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113)B substrate
001690 (1999)		Novel prospects for self-assembled InAs/GaAs quantum boxes
001750 (1999)		Elastic relaxation phenomena in compressive Ga0.2In0.8As grown on (0 0 1) and (1 1 3)B InP at low lattice mismatch
001918 (1998)		The effect of the growth procedure and the InAs amount on the formation of strain-induced islands in the InAs/InP(001) system
001B31 (1997-05-05)		Structural study of InAs quantum boxes grown by molecular beam epitaxy on a (001) GaAs-on-Si substrate
001C59 (1997)		InAsP/GaInP strained multilayers grown by MOVPE on (001), (113)B and (110) InP substrates: the role of the surface characteristics
001D70 (1996-08-12)		Strain in InAs islands grown on InP(001) analyzed by Raman spectroscopy
001E72 (1996)		Structural aspects of the growth of InAs islands on InP substrate
001F26 (1996)		InAs/GaAs quantum boxes obtained by self-organized growth: intrinsic electronic properties and applications
002018 (1995-09-25)		Relationship between self-organization and size of InAs islands on InP(001) grown by gas-source molecular beam epitaxy
002064 (1995-03-01)		Direct measurement of lateral elastic modulations in a zero-net strained GaInAsP/InP multilayer
002118 (1995)		Stability of (114) and (114¯) facets in III-V compounds under usual MBE conditions
002123 (1995)		Simulation and photoluminescence characterization of transverse electric-transverse magnetic emission of strained Ga0.47In0.53As/Ga062In038As superlattices
002165 (1995)		Influence of stress and surface reconstruction on the morphology of tensile GaInAs grown on InP(001) by gas source molecular beam epitaxy
002275 (1994-06-15)		Self-induced laterally modulated GaInP/InAsP structure grown by metal-organic vapor-phase epitaxy
002309 (1994-03)		Chemical beam epitaxy of strain balanced GaP/GaAs/InP/GaAs superlattices

---

List of associated KwdEn.i

Nombre de documents	Descripteur
16	Experimental study
11	Gallium arsenides
11	Indium arsenides
10	Molecular beam epitaxy
9	TEM
8	Indium phosphides
7	Photoluminescence
6	III-V semiconductors
6	Semiconductor materials
6	Ternary compounds
5	Multilayers
5	Semiconductor growth
5	Transmission electron microscopy
4	Binary compounds
4	Epitaxial layers
4	Quantum dots
3	Elasticity
3	Experiments
3	Gallium phosphides
3	Indium Arsenides
3	Indium Phosphides
3	Indium compounds
3	Island structure
3	Microelectronic fabrication
3	Mismatch lattice
3	Morphology
3	Semiconductor epitaxial layers
3	Semiconductor quantum dots
3	Stress relaxation
3	Thickness
2	Atomic force microscopy
2	Chemical beam epitaxy
2	Epitaxy
2	Growth from vapor
2	Heterostructures
2	Interface structure
2	Molecular beam condensation
2	Multiple quantum well
2	Nanostructures
2	Optical properties
2	Quantum wells
2	Quaternary compounds
2	Radius of curvature
2	Reflection high energy electron diffraction
2	Relaxation processes
2	Semiconducting indium compounds
2	Semiconductor quantum wells
2	Strained quantum well
2	Strains
2	Superlattices
2	Ternary compound
2	Thin films
1	Ambient temperature
1	Application
1	Band structure
1	Binary compound
1	Charge carriers
1	Compressive stress
1	Congress
1	Crystal defects
1	Crystal growth
1	Crystal growth from vapors
1	Crystal orientation
1	Crystalline structure
1	Crystallographic plane
1	Current density
1	Curvature
1	Curvature measurement
1	Deformation
1	Dilute nitrides
1	Dislocations
1	Elastic relaxation mechanism
1	Electron emission
1	Electron transitions
1	Electronic properties
1	Experimental result
1	Fabrication structure relation
1	Facetting
1	GSMBE
1	GSMBE method
1	Gallium Arsenides
1	Gallium Arsenides phosphides
1	Gallium Indium Arsenides
1	Gallium Indium Arsenides phosphides Mixed
1	Gallium Phosphides
1	Gallium phosphide
1	Growth mechanism
1	Heterojunctions
1	III-V compound
1	Indium Arsenides phosphides
1	Indium arsenide
1	Indium phosphide
1	Inhomogeneous broadening
1	Interface phenomena
1	Interfaces
1	Internal strains
1	Island density
1	Island spatial distribution
1	Laser
1	Laser diodes

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "A. Ponchet" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "A. Ponchet" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    A. Ponchet
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024