A. Oueriagli < A. Ougazzaden < A. Ouhaibi

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 70.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000025 (2013)		Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
000116 (2012)		Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials : Indium Nitride and Related Alloys
000172 (2011)		Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
000297 (2010)		Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content
000321 (2010)		Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO- buffered Si (111) substrates
000541 (2008)		Micro-Raman for compositions characterization of selective area growth of AlxGayIn1-x-yAs materials by metal-organic vapor-phase epitaxy
000659 (2007)		Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy
000756 (2006)		Synchrotron high angular resolution microdiffraction analysis of selective area grown optoelectronic waveguide arrays
000A15 (2005)		Application of X-ray standing wave (XSW) technique for studies of Zn incorporation in InP epilayers
000B17 (2004)		Microbeam high-resolution diffraction and x-ray standing wave methods applied to semiconductor structures
001291 (2001)		(InGa)(NAs)/GaAs structures emitting in 1-1.6 μm wavelength range
001352 (2000-01-17)		Step-bunching instability in strained-layer superlattices grown on vicinal substrates
001372 (2000)		Three-waveguide two-grating codirectional coupler for 1.3-/1.3+/1.5μm demultiplexing in transceiver
001374 (2000)		TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures
001410 (2000)		Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE
001434 (2000)		InGaAsP/AlGaAs multiple wavelength vertical cavity lasers and arrays in the 1.5-μm band fabricated by localized wafer fusion technique
001647 (1999)		Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine
001648 (1999)		Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates
001670 (1999)		Room temperature laser operation of bulk InGaAsN/GaAs structures grown by AP-MOVPE using N2 as carrier gas
001729 (1999)		Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine
001775 (1999)		Agile and fast switching monolithically integrated four wavelength selectable source at 1.55 μm

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List of associated KwdEn.i

Nombre de documents	Descripteur
31	Experimental study
19	Multiple quantum well
17	Gallium arsenides
16	Indium Phosphides
16	Indium arsenides
16	MOVPE method
15	Indium phosphides
15	Semiconductor materials
13	III-V compound
13	Photoluminescence
10	Quaternary compounds
10	Semiconductor lasers
9	Experiments
9	Gallium phosphides
9	III-V semiconductors
8	Epitaxial layers
8	Gallium Indium Arsenides phosphides Mixed
8	Integrated optoelectronics
8	Semiconducting indium phosphide
8	Strained quantum well
8	Ternary compounds
8	VPE
7	Epitaxy
7	Gallium Arsenides
7	Optical modulator
7	Organometallic compound
7	Quaternary compound
7	Semiconductor quantum wells
6	Binary compounds
6	Electrooptical modulator
6	Microelectronic fabrication
5	Application
5	Crystal growth from vapors
5	Distributed feedback laser
5	Growth from vapor
5	Indium Arsenides
5	Light modulators
5	Metallorganic vapor phase epitaxy
5	Mismatch lattice
5	Quantum wells
5	Selective area
5	Semiconducting indium compounds
5	Semiconductor device structures
5	Semiconductor laser
5	Ternary compound
5	XRD
4	Electroabsorption modulator
4	Gallium nitride
4	Growth mechanism
4	Indium
4	Indium nitride
4	Inorganic compound
4	Low pressure
4	Optical modulators
4	Optical telecommunication
4	Optical waveguides
4	Performance
4	Precursor
4	Selective growth
4	Semiconducting gallium arsenide
4	Semiconductor growth
4	TEM
4	Theoretical study
4	Theory
3	Aluminium arsenides
3	Atomic force microscopy
3	Binary compound
3	Cathodoluminescence
3	Chemical composition
3	Chemical vapor deposition
3	Current density
3	Distributed feedback lasers
3	Electrooptical absorption
3	Gallium Indium Arsenides Mixed
3	Gallium Phosphides
3	Heterojunctions
3	Heterostructures
3	Light amplifiers
3	Masking
3	Monolithic integrated circuits
3	Morphology
3	Operating mode
3	Optical properties
3	Optoelectronics
3	Photoelectric current
3	Production process
3	Quantum well lasers
3	Secondary ion mass spectrometry
3	Semiconducting gallium compounds
3	Strains
3	Substrates
3	Thickness
3	Thin film
2	Aluminium
2	Amplification
2	Angular resolution
2	Annealing
2	Band structure
2	Bandwidth
2	Circuit design

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