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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « A. Nouailhat »
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A. Nouaihat < A. Nouailhat < A. Nougaoui  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
002C12 (1989) Mécanismes de dérive du courant d'obscurité sur des photodiodes GaInAs/InP planar passivées par SiNx
002C90 (1989) Absolute photoionization cross-sections of 3d ions in InP: a comparison between experiment and theory
002E93 (1987) Radiative decay processes of vanadium ions in III-V compound semiconductors
002E94 (1987) Properties of InP doped with Led ions
002E98 (1987) Photoluminescence studies of Mg and Hg implanted Ga0,47In0,53As
002F85 (1986) The donor level of vanadium in InP
003000 (1986) Properties of titanium in InP
003047 (1986) Absolute photoionization cross sections of the acceptor state level of chromium in indium phosphide
003049 (1986) A study of deep levels by transient spectroscopy on p-type liquid-phase-epitaxial GaxIn1-xAsyP1-y grown on semi-insulating InP

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Experimental study
8Indium Phosphides
8Inorganic compound
7Semiconductor materials
4Deep level transient spectrometry
4Impurity
4Impurity level
4Photoluminescence
3Gallium Indium Arsenides Mixed
2Acceptor center
2Deep level optical spectrometry
2Donor center
2Doping
2III-V compound
2Impurity ionization
2Low temperature
2Photoionization
2Single crystal
2Temperature
2Vanadium
1Characterization
1Charge carrier concentration
1Charge carrier trapping
1Chemical composition
1Chemical vapor deposition
1Chromium
1Complex defect
1Configuration interaction
1Cross section
1Crystal growth
1Czochralski method
1Dark current
1Defect level
1Electron paramagnetic resonance
1Electronic transition
1Electrons
1Epitaxial film
1Excited state
1Gallium Arsenides
1Gallium Indium Arsenides phosphides Mixed
1Gallium Phosphides
1Growth from liquid
1Hall effect
1High pressure
1Hole
1Hybridization
1Ion implantation
1Ionization potential
1Liquid encapsulation
1Luminescence decay
1Magnesium
1Mercury
1Minority carrier
1Molybdenum
1N type conductivity
1Niobium
1Optical deep level transient spectrometry
1Optical transition
1Oscillator strength
1Oxidation number
1Palladium
1Photodiode
1Radiationless transition
1Rhodium
1Ruthenium
1Solid solution
1Theoretical study
1Thin film
1Titanium
1Transition metal
1Transition probability

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EXPLOR_STEP=IndiumV3/Data/France/Analysis

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
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   |clé=    A. Nouailhat
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