Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « A. Mircea »
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A. Miras < A. Mircea < A. Miri  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]
Ident.Authors (with country if any)Title
001B96 (1997) The role of N2 and H2 as carrier gas on the selective area MOVPE of InP-based heterostructures using TBAs and TBP as group-V sources
001C11 (1997) Selective area MOVPE growth of InP, InGaAs and InGaAsP using TBAs and TBP at different growth conditions
001C59 (1997) InAsP/GaInP strained multilayers grown by MOVPE on (001), (113)B and (110) InP substrates: the role of the surface characteristics
001D77 (1996-07-08) Trimethylarsenic as an alternative to arsine in the metalorganic vapor phase epitaxy of device quality In0.53Ga0.47As/InP
002078 (1995-01-15) Optical gain evaluation in GaInAsP quantum-well lasers: A comparison of the different growth techniques
002171 (1995) High temperature characteristics T0 and low threshold current density of 1.3μm InAsP/InGaP/InP compensated strain multiquantum well structure lasers
002186 (1995) Electroabsorption modulators for high-bit-rate optical communications : a comparison of strained InGaAs/InAlAs and InGaAsP/InGaAsP
002209 (1995) Atmospheric pressure MOVPE growth of high performance polarisation insensitive strain compensated MQW InGaAsP/InGaAs optical amplifier
002275 (1994-06-15) Self-induced laterally modulated GaInP/InAsP structure grown by metal-organic vapor-phase epitaxy
002350 (1994) Strained multi-quantum well heterostructures for lasers, modulators and integrated optical devices at 1.3-1.55 μm
002406 (1994) Full polarization intensitivity of a 20 Gb/s strained-MQW electroabsorption modulator
002743 (1993) A new organoindium precursor for electronic materials
002751 (1993) 10 Gbit/s operation of polarisation insensitive, strained InGaAsP/InGaAsP MQW electroabsorption modulator
002790 (1992) Use of high purity trimethylindium-trimethylamine adduct in MOVPE of InP
002882 (1992) Highly thermally stable, high-performance InGaAsP : InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE
002A21 (1991) High static performance GaInAs-GaInAsP SCH MQW 1.5 μm wavelength buried ridge stripe lasers
002A49 (1991) Efficient electroabsorption on InGaAsP/InGaAsP MQW optical waveguide
002A68 (1991) Band structure of indium phosphide from near-band-gap photoemission
002C26 (1989) Very uniform epitaxy
002C69 (1989) Hydrogen passivation of shallow acceptors in p-type InP
002F82 (1986) The growth and characterization of device quality InP/Ga1-xInxAsyP1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium

List of associated KwdEn.i

Nombre de
documents
Descripteur
13Experimental study
13Indium Phosphides
8Epitaxy
8Organometallic compound
7Gallium Indium Arsenides phosphides Mixed
7Multiple quantum well
7Semiconductor materials
5Growth from vapor
5Inorganic compound
5Photoluminescence
5Strained quantum well
4Chemical vapor deposition
4Gallium arsenides
4Indium arsenides
4Indium phosphides
4Microelectronic fabrication
4Ternary compound
4Thin film
3Crystal growth
3Gallium phosphides
3Heterojunction
3III-V compound
3Indium Arsenides
3Production process
3Quaternary compounds
2Band structure
2Electrooptical absorption
2Gallium Arsenides
2Gallium Indium Arsenides Mixed
2Gallium Phosphides
2Hydrogen
2Indium phosphide
2Laser
2Microelectronic processing
2Microelectronics
2Operating mode
2Optical characteristic
2Optical modulator
2P type conductivity
2Photoelectric current
2Precursor
2Quantum well
2Quaternary compound
2Semiconductor laser
1Aluminum Arsenides
1Arsenic Phosphides
1Binary compound
1Binary compounds
1Bit error rate
1Carrier gas
1Chemical composition
1Circuit gain
1Comparative evaluations
1Crystal growth from vapors
1Current density
1Deformation
1Deposition process
1Differential scanning calorimetry
1Diffusion coefficient
1Dispersion relation
1Double heterojunction
1Effective mass
1Electrical characteristic
1Electroabsorption modulator
1Electrooptical modulator
1Emission spectrum
1Energy spectrum
1Epitaxial film
1Experimental result
1Eye diagram
1Film growth
1Frequency modulation
1Frequency response
1Gain
1Gallium phosphide
1Heat treatment
1Heterojunctions
1Heterostructures
1High speed
1High temperature service behaviour
1III-V semiconductors
1Infrared radiation
1Injection laser
1Insertion loss
1Instrumentation
1Interface structure
1Lifetime
1Light amplifiers
1Light modulators
1Low temperature
1Luminescence spectrum
1MOCVD
1MOVPE method
1Manufacturing
1Masking
1Mismatch lattice
1Modulator
1Multilayers
1Nitrogen
1Optical communication

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