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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « A. Mereuta »
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A. Mere < A. Mereuta < A. Merrar  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000E72 (2002-03-15) Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots
000F70 (2002) Monolithic tunable InP-based vertical cavity surface emitting laser
000F75 (2002) Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3 μm
001073 (2001-10-01) Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots
001207 (2001) MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55μm VCSELs
001221 (2001) Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dots
001291 (2001) (InGa)(NAs)/GaAs structures emitting in 1-1.6 μm wavelength range
001372 (2000) Three-waveguide two-grating codirectional coupler for 1.3-/1.3+/1.5μm demultiplexing in transceiver
001374 (2000) TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures
001410 (2000) Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE
001434 (2000) InGaAsP/AlGaAs multiple wavelength vertical cavity lasers and arrays in the 1.5-μm band fabricated by localized wafer fusion technique
001492 (2000) 1.3 μm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, and influence of the re-growth temperature on the spectral response
001670 (1999) Room temperature laser operation of bulk InGaAsN/GaAs structures grown by AP-MOVPE using N2 as carrier gas

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Experimental study
7Photoluminescence
6Gallium arsenides
5MOVPE method
5Semiconductor lasers
4III-V semiconductors
4Indium arsenides
4Semiconductor growth
3Binary compounds
3Quantum dots
3VPE
2Ambient temperature
2Arrays
2Current density
2Indium compounds
2Indium phosphides
2Infrared laser
2MOCVD
2Metallorganic vapor phase epitaxy
2Quantum well lasers
2Quaternary compounds
2Semiconducting indium phosphide
2Semiconductor materials
2Semiconductor quantum dots
2Substrates
2TEM
2Theory
2Thin films
2Transmission electron microscopy
2Vertical cavity laser
1Annealing
1Application
1Batch process
1Batch production
1Binary alloys
1Binary compound
1Characterization
1Chemical composition
1Coatings
1Codirectional coupler
1Computer simulation
1Continuous wave
1Crystal growth from vapors
1Crystal perfection
1Desorption
1Diffraction gratings
1Diodes
1Distributed Bragg reflectors
1Electroluminescence
1Electromagnetic wave polarization
1Emission spectra
1Encapsulation
1Epitaxial layers
1Experimental result
1Experiments
1Fabry Perot laser diodes
1Fiber optic networks
1Gallium Arsenides phosphides
1Gallium nitrides
1Heat treatments
1Indium Arsenides phosphides
1Indium nitrides
1Indium phosphide
1Instability
1Integrated optoelectronics
1Laser arrays
1Laser diodes
1Laser resonators
1Laser spectra
1Lattice mismatched
1Layer thickness
1Line broadening
1Low pressure
1Material processing
1Metallorganic chemical vapor deposition
1Microelectromechanical device
1Microelectronic fabrication
1Micromachining
1Mirrors
1Mismatch lattice
1Monolithic integrated circuit
1Morphological changes
1Multiplexer demultiplexer
1Multiplexing equipment
1Nanostructures
1Nitrogen
1Optical access network
1Optical fiber
1Optical line terminal
1Optical network unit
1Optical pumping
1Optical system
1Optoelectronic device
1Photoconductivity
1Photodetectors
1Reflection
1Refractive index
1Reviews
1Semiconducting aluminum compounds
1Semiconducting aluminum indium arsenide

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