A. Lecorre < A. Lefebvre < A. Leithe-Jasper

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]

Ident.	Authors (with country if any)	Title
000C47 (2003-04-01)		Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy
000F71 (2002)		Moiré-like fringes in transmission electron microscopy images of coherently strained semiconductor islands
001213 (2001)		LACBED measurement of the chemical composition of a thin InxGa1-x as layer buried in a GaAs matrix
001267 (2001)		Determination of the composition of coherently strained islands by transmission electron microscopy
001543 (1999-08-15)		High resolution electron microscope analysis of lattice distortions and In segregation in highly strained In0.35Ga0.65As coherent islands grown on GaAs (001)
001544 (1999-08-15)		A finite-element study of strain fields in vertically aligned InAs islands in GaAs
001635 (1999)		Transmission electron microscopy analysis of the shape and size of semiconductor quantum dots
001925 (1998)		Surface relaxation of strained semiconductor heterostructures revealed by finite-element calculations and transmission electron microscopy
001C83 (1997)		Elastic misfit stress relaxation in In0.25Ga0.75As layers grown under tension on InP(001)
001D58 (1996-09-01)		Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy
001D72 (1996-07-15)		Transmission electron microscopy and cathodoluminescence of tensile-strained GaxIn1-xP/InP heterostructures. I. Spatial variations of the tensile stress relaxation
001F59 (1996)		Dislocation introduction in the initial stages of MBE growth of highly strained In0.30Ga0.70As/GaAs structures
002044 (1995-06-19)		Plastic stress relaxation in highly strained In0.30Ga0.70As/GaAs structures
002260 (1994-08-29)		Elastic misfit stress relaxation in highly strained InGaAs/GaAs structures
002374 (1994)		Multiplication of misfit dislocations in InxGa1-xAs/GaAs heterostructures
002430 (1994)		Cross-slip in the first stages of plastic relaxation in InxGa1-xAs/GaAs heterostructures
002603 (1993)		On the formation of edge dislocations in InxGa1-xAs/GaAs heterostructures with x<0.20
002857 (1992)		Intrinsic strain at slightly mismatched InGaAs/InP interfaces as studied by transmission electron microscopy
002A13 (1991)		Interactions of misfit dislocations in InxGa1-xAs/GaAs interfaces
002A73 (1991)		A new type of misfit dislocation multiplication process in InxGa1-xAs/GaAs strained-layer superlattices
002C50 (1989)		On the determination of the nature of misfit dislocations in semiconductor strained-layer heterostructures

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List of associated KwdEn.i

Nombre de documents	Descripteur
20	Experimental study
14	Gallium arsenides
12	Semiconductor materials
11	Indium arsenides
9	TEM
7	Transmission electron microscopy
6	Binary compounds
6	Stress relaxation
6	Ternary compounds
5	Finite element method
4	Chemical composition
4	Dislocation
4	Gallium Arsenides
4	Heterojunctions
4	III-V semiconductors
4	Inorganic compound
4	Thin film
4	Thin films
3	Burgers vector
3	Dislocations
3	Epitaxial layers
3	Gallium Indium Arsenides Mixed
3	Indium compounds
3	Island structure
3	Misfit dislocations
3	Molecular beam epitaxy
3	Solid solid interface
3	Strained superlattice
3	Superlattice
2	Atomic force microscopy
2	Dislocation multiplication
2	Gallium Indium Arsenides
2	Misfit dislocation
2	Models
2	Morphology
2	Quantum dots
2	Roughness
2	Semiconductor quantum dots
2	Solid-solid interfaces
2	Strained layer
2	Surfaces
2	Theoretical study
1	Aluminium compounds
1	Buried layers
1	Coalescence
1	Crystal faces
1	Crystal growth
1	Crystal nucleation
1	Dark field microscopy
1	Deformation
1	Dimensions
1	Dislocation glide
1	Displacement field
1	Dynamic model
1	Edge dislocations
1	Elastic deformation
1	Elasticity
1	Electron microscopy
1	Epitaxy
1	Film growth
1	Fourier analysis
1	Frank Read source
1	Geometrical shape
1	Heterojunction
1	High electron mobility transistors
1	Image analysis
1	Image contrast
1	Indium Phosphorus
1	Interaction
1	Internal strains
1	Internal stresses
1	Lattice relaxation
1	Measurement errors
1	Mechanism
1	Mismatch lattice
1	Moire deflectometry
1	Moire fringes
1	Molecular beam condensation
1	Multilayers
1	Nucleation
1	Plastic deformation
1	Relaxation
1	STM
1	Semiconductor device measurement
1	Semiconductor epitaxial layers
1	Semiconductor quantum wells
1	Semiconductor thin films
1	Slip
1	Solid solution
1	Solid solutions
1	Stresses
1	Substrates
1	Surface diffusion
1	Surface segregation
1	Surface structure
1	Thickness
1	X-ray chemical analysis

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