A. Jouini < A. Joullie < A. Joulliè

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 30.
[0-20] [0 - 20][0 - 30][20-29][20-40]

Ident.	Authors (with country if any)	Title
000669 (2007)		Interface analysis of InAs/GaSb superlattice grown by MBE
000717 (2007)		Carrier recombination mechanisms in mid-infrared GaInAsSb quantum well lasers
000867 (2005)		Uncooled InAs/GaSb superlattice photovoltaic detector operating in the mid-wavelength infrared range
000917 (2005)		Optical characterization of symmetric InAs/GaSb superlattices for detection in the 3-5 μm spectral region
000935 (2005)		MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection
001209 (2001)		MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 μm
001210 (2001)		MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers
001311 (2000-10-09)		Type-II InAsSb/InAs strained quantum-well laser diodes emitting at 3.5 μm
001335 (2000-05-01)		InAs(PSb)-based W quantum well laser diodes emitting near 3.3 μm
001435 (2000)		InAs/InAs(P,Sb) quantum-well laser structure for the midwavelength infrared region
001442 (2000)		High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers
001593 (1999-02-01)		Spontaneous emission from InAs/GaSb quantum wells grown by molecular beam epitaxy
001669 (1999)		Room-temperature 2.63 μm GaInAsSb/GaSb strained quantum-well laser diodes
001731 (1999)		GaInSb/AlGaAsSb strained quantum well semiconductor lasers for 1.55 μm operation
001976 (1998)		Long-wavelength (Ga,In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy
001A98 (1997-08-11)		Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures
001F31 (1996)		High sensitivity 2.5 μm photodiodes with metastable GaInAsSb absorbing layer
001F52 (1996)		Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy
002397 (1994)		High-power low-threshold Ga0.88In0.12As0.10Sb0.90/Al0.47Ga0.53As0.04Sb0.96 double heterostructure lasers grown by liquid phase epitaxy
002518 (1993)		Caractérisation au-dessous du seuil de doubles hétérostructures lasers GaInAsSb/GaAlAsSb émettant vers 2,37 μm
002854 (1992)		Liquid phase epitaxy and characterization of InAs1-x-ySbxPy on (100) InAs

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List of associated KwdEn.i

Nombre de documents	Descripteur
17	Experimental study
10	Gallium antimonides
10	Indium arsenides
9	Molecular beam epitaxy
9	Quantum well lasers
8	III-V semiconductors
7	Indium antimonides
6	Epitaxy
6	Photoluminescence
6	Semiconductor lasers
5	Gallium Indium Antimonides arsenides Mixed
5	Inorganic compound
5	Semiconductor laser
5	Semiconductor materials
4	Aluminium Gallium Antimonides arsenides Mixed
4	Aluminium antimonides
4	Binary compounds
4	Double heterojunction
4	Gallium arsenides
4	Indium compounds
4	Laser diodes
4	Mid infrared radiation
4	Quaternary compounds
4	Solid solution
4	Strained quantum well
3	Binary compound
3	Chemical composition
3	Crystal growth
3	Crystal growth from vapors
3	Current density
3	Electroluminescence
3	Energy gap
3	Gallium Antimonides
3	Growth from liquid
3	Indium Antimonides arsenides
3	Infrared radiation
3	Output power
3	Temperature
3	Ternary compounds
3	Thin film
3	Threshold current
2	Absorption coefficients
2	Aluminium arsenides
2	Characterization
2	Gallium compounds
2	Heterojunction
2	III-V compound
2	Indium Arsenides
2	Infrared laser
2	Injection laser
2	Interfaces
2	Liquid phase
2	Performance evaluation
2	Phase diagram
2	Photodiode
2	Quantum efficiency
2	RHEED
2	Semiconductor quantum wells
2	Size effect
2	Spontaneous emission
2	Superlattice
2	Superlattices
2	Temperature dependence
2	Thickness
2	Waveguide lasers
2	X ray diffraction
1	Absorbance
1	Absorption coefficient
1	Absorption spectrum
1	Aluminium Antimonides
1	Aluminium Antimonides arsenides
1	Ambient temperature
1	Antimony Gallium
1	Antimony Gallium Indium Arsenides Mixed
1	Application
1	Arrhenius equation
1	Arsenic additions
1	Atomic force microscopy
1	Auger effect
1	Auger recombination
1	Band offset
1	Band structure
1	CW laser
1	CW lasers
1	Cavity resonator
1	Charge carrier recombination
1	Cladding (coating)
1	Composition effects
1	Compressive stress
1	Conduction bands
1	Cut off frequency
1	DH lasers
1	Detection
1	Diffusion coefficient
1	Doped materials
1	Effective mass model
1	Electrical properties
1	Electroreflection
1	Energy-level splitting
1	Envelope function

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