Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « A. Giani »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
A. Ghazali < A. Giani < A. Gicquel  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
001241 (2001) Growth of bulk and superlattice GaAsSb layers on InP
001E92 (1996) Photodetection at 3.65 μm in the atmospheric window using InAs0.91Sb0.09/GaAs heteroepitaxy
001F56 (1996) Electrical characteristics of GaIn(As)Sb layers grown by metal organic vapor phase epitaxy
002190 (1995) Elaboration and characterization of InAsSb grown on GaSb and GaAs substrates
002663 (1993) Growth and characterization of n-type (Te) doped metal organic vapor phase epitaxy GaInSb
002849 (1992) MOVPE growth Ga0.6In0.4Sb photodiodes for 5.55 μm detection
002874 (1992) InGaSb/GaSb photodiodes growth by MOVPE
002A18 (1991) Improvement of the crystalline, optical and electrical quality of MOVPE GaInSb layers

List of associated KwdEn.i

Nombre de
documents
Descripteur
7Experimental study
4Epitaxy
4Gallium Indium Antimonides Mixed
4Growth from vapor
4Organometallic compound
4Semiconductor materials
3Inorganic compound
3Mismatch lattice
2Buffer layer
2Carrier density
2Charge carrier concentration
2Crystal growth from vapors
2Gallium antimonides
2Gallium arsenides
2III-V semiconductors
2Indium antimonides
2Indium arsenides
2Photodetector
2Photodiode
2Ternary compounds
2Thin film
2Thin films
2VPE
1Binary compound
1Binary compounds
1Carrier mobility
1Characterization
1Charge carrier mobility
1Chemical composition
1Chemical vapor deposition
1Controlled atmosphere
1Crystal growth
1Doping
1Electrical properties
1Electron diffraction
1Epitaxial layers
1Fabrication property relation
1Gallium Antimonides
1Gallium Antimonides arsenides
1Gallium Arsenides
1Hall effect
1Heteroepitaxy
1Heterojunction
1Heterojunctions
1Holes
1Homojunction
1III-V compound
1IV characteristic
1Indium Antimonides
1Indium Antimonides arsenides
1Indium phosphides
1Infrared detection
1MOCVD
1Microstructure
1Mobility
1Optical properties
1Organometallic compounds
1Passivation
1Photoconductivity
1Photoluminescence
1Precursor
1Pressure
1Production process
1Quantity ratio
1Quaternary compounds
1Secondary ion mass spectrometry
1Semiconductor device
1Solid solution
1Superlattices
1Support
1TEM
1Temperature effects
1Ternary compound
1X ray diffraction
1XRD

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "A. Giani" 
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "A. Giani" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    A. Giani
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024