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Index « Auteurs » - entrée « A. Georgakilas »
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A. Gentil-Sagot < A. Georgakilas < A. George  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000766 (2006) Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE
000932 (2005) Micro-raman characterization of InxGa1-xN/GaN/Al2O3 heterostructures
000943 (2005) Interfacial structure of MBE grown InN on GaN
000D12 (2003) Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence
002265 (1994-08-01) Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon
002536 (1993) Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells
002565 (1993) Room-temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs layers grown on InP substrates
002566 (1993) Room temperature photoreflectance as a powerful tool to characterize the crystalline quality of InAlAs layers grown on InP substrates
002581 (1993) Photoreflectance studies of lattice-matched and strained InGaAs/InAlAs single quantum wells
002586 (1993) Photo-induced current transient spectroscopy of Al0.48In0.52As semi-insulating layers grown on InP by molecular beam epitaxy
002622 (1993) Materials problems for the development of InGaAs/InAlAs HEMT technology
002726 (1993) Characterization of lattice-matched and strained GaInAs/AlInAs HEMT structures by photoluminescence spectroscopy
002747 (1993) A comprehensive optimization of InAlAs molecular beam epitaxy for InGaAs/InAlAs HEMT technology

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
7Molecular beam epitaxy
5Aluminium arsenides
5Indium arsenides
5Semiconductor materials
5Ternary compounds
4Gallium Indium Arsenides Mixed
4Gallium nitrides
4Indium nitrides
4Photoluminescence
4Thin films
3Aluminium Indium Arsenides Mixed
3Chemical composition
3High electron mobility transistor
3Interfaces
3Mismatch lattice
3Optical properties
3Transmission electron microscopy
2Aluminium nitrides
2Characterization
2Crystal growth
2Crystal perfection
2Electron mobility
2Gallium arsenides
2Heterostructures
2III-V semiconductors
2Microstructure
2Quantum wells
2Surfaces
1Aluminium Indium Arsenides
1Aluminium oxides
1Amplitude phase
1Atomic clusters
1Band offset
1Binary compounds
1Charge carrier mobility
1Compressive stress
1Conduction band
1Conduction bands
1Crystal defect
1Crystal growth from vapors
1Dislocation
1Dislocation density
1Dispersive spectrometry
1Electrical properties
1Electron beams
1Electron diffraction
1Electronic component
1Energy-level transitions
1Epitaxy
1Extended defect
1Fabrication property relation
1Fabrication structure relation
1High temperature
1High-frequency discharges
1III-V compound
1Impurity
1Indium phosphides
1Infrared spectra
1Inorganic compound
1Inorganic compounds
1Interband transition
1Interfacial area
1Lattice parameters
1Least squares method
1Line widths
1Low temperature
1Misfit dislocations
1Modulation
1Molecular beam condensation
1Multijunction structure
1Multiple layer
1Multiple quantum well
1Operating mode
1Optical modulation
1Optical pumping
1Optical reflection
1Optical transition
1Performance
1Phase analysis
1Phase transformation
1Photo-induced transient spectroscopy
1Plasma sources
1Quantum Hall effect
1Quantum well
1Raman spectra
1Reflection spectrum
1Roughness
1Semiconductor device
1Semiconductor lasers
1Shubnikov-de Haas effect
1Silicon
1Solid solutions
1Spectral reflectance
1Stacking fault density
1Support
1TEM
1Temperature
1Temperature dependence
1Temperature measurement

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