Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « A. Cappy »
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A. Cantarero < A. Cappy < A. Caprani  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 24.
[0-20] [0 - 20][0 - 24][20-23][20-40]
Ident.Authors (with country if any)Title
000720 (2007) Ballistic nano-devices for high frequency applications
000748 (2006) Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions
000841 (2006) Dwell-time related saturation of phase coherence in ballistic quantum dots
000877 (2005) Terahertz generation by plasma waves in nanometer gate high electron mobility transistors
000989 (2005) Dwell-time-limited coherence in open quantum dots
000A39 (2004-03-29) Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
000A61 (2004) Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures
000B38 (2004) InAlAs/InGaAs double-gate HEMTs with high extrinsic transconductance
000B39 (2004) InAlAs-InGaAs double-gate HEMTs on transferred substrate
000D34 (2003) Metamorphic InAlAs/InGaAs HEMTs: Material properties and device performance
000E15 (2002-12-15) Long dephasing time and high-temperature conductance fluctuations in an open InGaAs quantum dot
000E91 (2002) fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga 0.47As HEMTs on GaAs substrate
001057 (2002) 0.12 μm transferred-substrate In0.52Al0.48As/In0.53Ga 0.47As HEMTs on silicon wafer
001431 (2000) Indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: A new structure parameter
001624 (1999) HEMTS métamorphiques à hétérojonction InxAl1-xAs/InxGa1-xAs sur substrat gaas : Influence du taux d'indium x
001700 (1999) Metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMT's on GaAs substrate
001751 (1999) Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis
001782 (1999) 94-GHz MMIC CPW low-noise amplifier on InP
001967 (1998) Numerical analysis of device performance of metamorphic InyAl1-yAs/InxGa1-xAs (0.3≤x≤0.6) HEMT's on GaAs substrate
001974 (1998) MBE grown InAlAs/InGaAs lattice mismatched layers for HEMT application on GaAs substrate
002618 (1993) Microwave performance of 0.4μm gate metamorphic In0.29Al0.71As/In0.3Ga0.7As HEMT on GaAs substrate

List of associated KwdEn.i

Nombre de
documents
Descripteur
8High electron mobility transistors
7Gallium arsenides
7Transconductance
6Experimental study
6High electron mobility transistor
6III-V semiconductors
6Indium arsenides
4Aluminium arsenides
4Ballistic transport
4Experiments
4Field effect transistor
4Gallium Arsenides
4Gallium Indium Arsenides Mixed
4III-V compound
3Epitaxy
3Heterostructures
3Molecular beam
3Monte Carlo method
3Semiconducting gallium arsenide
3Semiconducting indium compounds
3Semiconductor device structures
3Substrates
3Ternary compound
3Theoretical study
3Voltage current curve
2Aluminium Indium Arsenides Mixed
2Buffer layer
2Capacitance
2Coherence
2Electron mobility
2Heterojunctions
2Indium compounds
2Microelectronic fabrication
2Molecular beam epitaxy
2Quantum dots
2Room temperature
2Semiconducting indium gallium arsenide
2Semiconductor materials
2Theory
2Transferred substrate
2Two-dimensional electron gas
1Aluminium Arsenides
1Atomic force microscopy
1Background noise
1Chemical composition
1Composition effect
1Computer simulation
1Concentration effect
1Coplanar technology
1Coplanar waveguides
1Current fluctuations
1Current gain
1Current voltage characteristics
1Cut off frequency
1Cutoff frequency
1Deformation
1Delta doping plane
1Design
1Drain current
1Drain to source current
1Dynamic characteristic
1Effective mass
1Electric currents
1Electric field
1Electron beams
1Electron transport properties
1Energy level population
1Equivalent circuits
1Fermi level
1Field effect transistors
1Frequencies
1Frequency response
1GHz range
1Gain
1Gate length
1Gates (transistor)
1HEMT integrated circuits
1Heterojunction
1High voltage
1IV characteristic
1Indium
1Indium Arsenides
1Indium aluminide arsenide
1Indium aluminum arsenide
1Indium gallium arsenide
1Indium phosphate
1Indium phosphide
1Inorganic compound
1Inorganic compounds
1Instability
1Integrated circuit manufacture
1Interference
1Lattice constants
1Limiting factor
1Low noise amplifier
1Magnetic field effects
1Magnetoresistance
1Metal semiconductor field effect transistor
1Metamorphic semiconductors
1Metamorphism

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