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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « A. Bath »
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A. Barski < A. Bath < A. Bazin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 20.
Ident.Authors (with country if any)Title
000497 (2008) Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies
001438 (2000) Improved bias-thermal-stress method for the insulator charge measurement of BN/InP MIS structures
001485 (2000) Analysis of interface states of n-InP MIS structures based on bias dependence of capacitance and photoluminescence intensity
001748 (1999) Electrical and gated photoluminescence intensity studies on Schottky and oxidized Schottky structures
001935 (1998) Stability of sulfur-treated n-InP Schottky structures, studied by current-voltage measurements
001A14 (1998) Electrical properties of MIS structures with BN insulating layer
001C19 (1997) Procedure to minimize interface-state errors in MIS doping profile determinations
001C20 (1997) Preparation of boron nitride thin films by microwave plasma enhanced CVD, for semiconductor applications
001C63 (1997) Improved high frequency C-V method for interface state analysis on MIS structures
001E90 (1996) Photoluminescence intensity study of n-InP diodes in the accumulation regime
002030 (1995-09) Contribution à l'étude des propriétés électroniques des structures M.I.S sur InP (Au/BN/InP)
002036 (1995-08) Interface state measurements by the DLS-82E lock-in spectrometer
002139 (1995) Peak and side data analyses to measure deep levels by DLS-82E lock-in spectrometer
002187 (1995) Electrical properties of Au/Bn[BN]/InP MIS diodes
002366 (1994) Plasma enhanced chemical vapour deposition of boron nitride onto InP
002372 (1994) On the interface state distribution of BN on InP structures
002584 (1993) Photoluminescence characterization of structures obtained by multipolar plasma oxidation of InP
002988 (1991) Photoluminescence intensity study of n-InP MIS structures realized with a native oxide insulator film
002D22 (1988) Caractérisation de l'interface isolant InP formé en oxydation plasma par l'étude des transitoires de capacité DLTS et DDLTS
002E15 (1988) Determination by optical DLTS of the distribution of states near the valence band of plasma oxidized n-type InP

List of associated KwdEn.i

Nombre de
documents		Descripteur
14Experimental study
9Indium phosphides
9MIS structure
7CV characteristic
6Indium Phosphides
6Photoluminescence
5Boron nitrides
5Gold
4Binary compounds
4DLTS
4III-V compound
4Interface electron state
4Interface states
4MIS structures
3Boron nitride
3Chemical vapor deposition
3III-V semiconductors
3Indium phosphide
3Optical properties
3Thin films
3Voltage capacity curve
2Bias voltage
2Binary compound
2Capacitance
2Characterization
2Deep level transient spectrometry
2Deep level transient spectroscopy
2Dielectric materials
2Electric contact
2Electrical properties
2Ellipsometry
2Energy-level density
2Experiments
2IV characteristic
2MIS devices
2Oxidation
2PECVD
2Photoelectron spectroscopy
2Schottky barrier diodes
2Semiconducting indium phosphide
2Semiconductor device
2Semiconductor device structures
2Semiconductor doping
2Semiconductor oxide contact
2Silicon
2Theoretical study
2Tunnel effect
2Voltage current curve
1Annealing
1Barrier height
1Boron Nitrides
1Boron complexes
1CVD
1Capacitance measurement
1Capacitance voltage characteristics
1Charge carrier recombination
1Chemical treatment
1Conduction bands
1Crystal defects
1Crystalline structure
1Deep level
1Density of states
1Electric insulators
1Electrical characteristic
1Electronic structure
1Energy gap
1Etching
1Experimental test
1Fermi level
1Growth mechanism
1Hexagonal crystals
1Hysteresis
1Illumination
1Infrared spectrometry
1Inorganic compound
1Inorganic compounds
1Insulating material
1Integrated circuit
1Intensity
1Interface
1Interface properties
1Interface state analysis
1Interface state errors
1Interfaces
1Interfaces (materials)
1Leakage current
1MIS diode
1MIS junctions
1Measuring methods
1Metal semiconductor field effect transistor
1Metal-semiconductor contacts
1Microelectronics
1Microwave circuit
1Microwave radiation
1Minority carrier
1Modified bias temperature stress (BTS)
1Modified chemical vapor deposition
1Modulation
1N type semiconductor
1Optoelectronic device

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