Auteurs
Analysis
France
Racine
Analysis
France
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « A. Arnoult »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
A. Armitage < A. Arnoult < A. Astito  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
000525 (2008) Optical and electrical properties of modulation-doped n and p-type GaxIn1-xNyAs1-y/GaAs quantum wells for 1.3 μm laser applications
000A66 (2004) TEM evaluation of strain and stress in III-V semiconductor epitaxial structures
000D14 (2003) Photo-induced transient spectroscopy of defect levels in GaInNAs
000D23 (2003) Nitrogen plasma investigations for GaInAsN MBE growth
000D90 (2003) Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties
000E01 (2003) Band structure and optical gain in InGaAsN/GaAs and InGaAsN/GaAsN quantum wells
000F36 (2002) RF plasma investigations for plasma-assisted MBE growth of (Ga, In)(As, N) materials

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Experimental study
4Gallium arsenides
4III-V semiconductors
4Molecular beam epitaxy
3Indium arsenides
2Crystal growth from vapors
2Experiments
2High-frequency discharges
2Nitrides
2Optical properties
2Photoluminescence
2Plasma sources
2Quantum wells
2Quaternary compounds
2Semiconductor quantum wells
1Activation energy
1Band anticrossing model
1Band structure
1Binary compounds
1Calculations
1Carrier concentration
1Contamination
1Crystal defects
1Crystal orientation
1Curvature
1Deep level
1Defect states
1Dilute nitrides
1Electrical properties
1Electron mobility
1Emission spectroscopy
1Epitaxial layers
1Excitons
1Gallium Arsenides nitrides
1Gallium Nitrides
1Gallium nitrides
1Hall mobility
1Hamiltonians
1Impurity density
1Indium Arsenides
1Indium Arsenides nitrides
1Indium Nitrides
1Indium nitrides
1Interfaces
1Ion beams
1Laser materials
1Mathematical models
1Misfit stress
1Mismatch lattice
1Monochromators
1Nitrogen
1Optical dipole moments
1Optical gain
1Optical materials
1Optical spectrometry
1Photo-induced transient spectroscopy
1Photoconductivity
1Photocurrent spectroscopy
1Photocurrents
1Photodiodes
1Physical radiation effects
1Plasma chemistry
1Plasma density
1Plasma diagnostics
1Plasma physics
1Radius of curvature
1Red shift
1Reviews
1Secondary ion mass spectrometry
1Segregation
1Semiconducting gallium arsenide
1Semiconducting gallium compounds
1Semiconducting gallium indium nitrogen arsenide
1Semiconducting indium compounds
1Semiconductor device structures
1Semiconductor lasers
1Stress analysis
1Stress determination
1Temperature dependence
1Ternary compounds
1Theory
1Thickness
1Thin films
1Transmission electron microscopy
1Trapping

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "A. Arnoult" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "A. Arnoult" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    A. Arnoult
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024