Utrecht < Valbonne < Valbonne Sophia Antipolis

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List of bibliographic references

Number of relevant bibliographic references: 97.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000109 (2012)		Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters
000217 (2011)		Growth and characterization of polar (0 0 0 1) and semipolar (11-22) InGaN/GaN quantum dots
000264 (2010)		Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (1 0 0) GaAs substrates
000318 (2010)		Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy
000449 (2009)		Heteroepitaxial growth of thin InAs layers on GaAs(100) misoriented substrates: A structural and morphological comparison
000495 (2008)		Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures
000672 (2007)		Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates
000730 (2007)		AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
000767 (2006)		Structural characterisation of Sb-based heterostructures by X-ray scattering methods
000790 (2006)		Optical design of InAlGaAs low-loss tunnel-junction apertures for long-wavelength vertical-cavity lasers
000894 (2005)		Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities
000945 (2005)		Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes
000A19 (2005)		Alumina-rich spinel : A new substrate for the growth of high quality GaN-based light-emitting diodes
000B09 (2004)		Near band edge emission of MBE grown ZnO epilayers: identification of donor impurities and O2 annealing effects
000C01 (2003-12-15)		Isoelectronic traps in heavily doped GaAs:(In,N)
000C26 (2003-08-15)		Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy
000C37 (2003-05-19)		Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells
000C47 (2003-04-01)		Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy
000C51 (2003-03-24)		GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm
000D49 (2003)		Indium surface segregation in AlSb and GaSb
000D55 (2003)		In surface segregation in InGaN/GaN quantum wells

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