Montpeller < Montpellier < Montpellier Cédex 05

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 338.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000005 (2014)		Backgating effect in III-V MESFET's: A physical model
000039 (2013)		Nanowire-based field effect transistors for terahertz detection and imaging systems : TERAHERTZ NANOTECHNOLOGY
000052 (2013)		InAs/AISb quantum cascade lasers operating near 20 μm
000067 (2013)		Effect of GaN template thickness and morphology on AlxGa1-xN (0
000069 (2013)		Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes
000078 (2013)		(112) and (220)/(204)-oriented CuInSe2 thin films grown by co-evaporation under vacuum
000082 (2012)		Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN : Indium Nitride and Related Alloys
000099 (2012)		Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors
000114 (2012)		Kinetics Model of the Thermal Oxidation of Indium Powder
000115 (2012)		Investigation of indium nitride for micro-nanotechnology
000131 (2012)		Effect of Indium Doping of γ-Alumina on the Stabilization of PtSn Alloyed Clusters Prepared by Surface Organostannic Chemistry
000132 (2012)		E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods
000135 (2012)		Defect and phase stability of solid solutions of Mg2X with an antifluorite structure: An ab initio study
000136 (2012)		Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain
000160 (2011)		Terahertz Imaging with InP High-electron-mobility Transistors
000185 (2011)		Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode
000190 (2011)		Noise performance analysis of MWIR InAs/GaSb superlattice pin photodiodes
000219 (2011)		Free electron properties and hydrogen in )nN grown by MOVPE : Growth of Group III Nitrides
000246 (2011)		Asymmetric InAs/GaSb superlattice pin photodiode to improve temperature operation
000257 (2010)		Thermal conductance of the interfaces between the III-nitride materials and their substrates: Effects of intrinsic material properties and interface conditions
000270 (2010)		Sb-based laser sources grown by molecular beam epitaxy on silicon substrates

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