Serveur d'exploration sur l'Indium - Analysis (France)

Index « AffVille.i » - entrée « Mont Saint Aignan »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Meylan < Mont Saint Aignan < Mont St Aignan  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]
Ident.Authors (with country if any)Title
000D83 (2003) Determination of beryllium and self-interstitial diffusion parameters in InGaAs
000F72 (2002) Modified Gibbs-DiMarzio equation applied to the Ge-Se-Fe and Ge-Se-In chalcogenide glasses
001045 (2002) Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects
001272 (2001) Comparative models for diffusion of Be in InGaAs/InP heterostructures
001286 (2001) A model for diffusion of beryllium in InGaAs/InP heterostructures
001481 (2000) Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy
001482 (2000) Be diffusion in InGaAs/InP heterostructures grown by gas source molecular beam epitaxy
001665 (1999) Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE
001672 (1999) Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing
001768 (1999) Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaZs/InGaAsP, InGaAs/InP heterointerfaces
001977 (1998) Local environment of indium in Ge2333Se6467In12 chalcogenide glass
001985 (1998) Investigation of Be diffusion in InGaAs using Kick-out mechanism
001A31 (1998) Be diffusion in InGaAs layers grown by gas source molecular beam epitaxy
001A37 (1998) An EXAFS investigation of the local order around indium in Ge-Se-In glasses
001A39 (1998) A study of Be diffusion in InGaAsP layers grown by gas-source molecular beam epitaxy
001B78 (1997) p-Type diffusion in InGaAs epitaxial layers using two models : A concentration dependent diffusivity and a point defect nonequilibrium
001D04 (1997) Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model
001D05 (1997) Beryllium diffusion in InGaAs compounds grown by chemical beam epitaxy
001F77 (1996) About the coordination number of indium in GexSe1-x-yIny glasses
002011 (1995-10-09) Be diffusion mechanisms in InGaAs during post-growth annealing
002099 (1995) Contribution au développement d'un capteur en couche mince pour la mesure de champ magnétique

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/AffVille.i -k "Mont Saint Aignan" 
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/AffVille.i  \
                -Sk "Mont Saint Aignan" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    AffVille.i
   |clé=    Mont Saint Aignan
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024