Labège < Lannion < Lannion-Cédex

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List of bibliographic references

Number of relevant bibliographic references: 51.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000201 (2011)		Low noise Raman lasers for yellow-orange spectrum coverage
000731 (2007)		Advanced component technologies for colourless access networks
000900 (2005)		Polarization sensitivity characterization under normal incidence of a multiple quantum wells saturable absorber nonlinear mirror as a function of the temperature of the chip
000933 (2005)		Micro-lens on polarization maintaining fibre for coupling with 1.55 μm quantum dot devices
000A08 (2005)		Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection
000D61 (2003)		Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser
000F28 (2002)		Room temperature laser emission of 1.5 μm from InAs/InP(311)B quantum dots
001134 (2001)		Toward the tailoring of electrochromic bands of metal-oxide mixtures
001345 (2000-03)		Influence of nonlinearities on two-wave mixing in photorefractive InP:Fe crystals with a moving grating
001570 (1999-05-17)		Spatial modulation of the dielectric function using free carriers and/or coherent effects in quantum-well semiconductor microcavity
001586 (1999-03-22)		Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113)B substrate
001668 (1999)		Self-organized InAs islands on InP(311)B substrates emitting around 1.55 μm
001679 (1999)		Polarization-independent double phase conjugate mirror
001750 (1999)		Elastic relaxation phenomena in compressive Ga0.2In0.8As grown on (0 0 1) and (1 1 3)B InP at low lattice mismatch
001820 (1998-10-15)		Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP
001828 (1998-10)		Theoretical and experimental study of spatial resolution in quantum-well spatial light modulators
001918 (1998)		The effect of the growth procedure and the InAs amount on the formation of strain-induced islands in the InAs/InP(001) system
001998 (1998)		High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5-1.6 μm
001A63 (1997-11-10)		Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100)
001B14 (1997-06-30)		Fe-doped InGaAs/InGaAsP photorefractive multiple quantum well devices operating at 1.55 μm
001B42 (1997-03-24)		Photorefractive multiple quantum well device using quantum dots as trapping zones

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