Université Carnegie-Mellon < Université Claude Bernard Lyon1 < Université Henri Poincaré

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List of bibliographic references

Number of relevant bibliographic references: 21.
[0-20] [0 - 20][0 - 21][20-20][20-40]

Ident.	Authors (with country if any)	Title
000428 (2009)		Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound
000494 (2008)		Surface characterisation and functionalisation of indium tin oxide anodes for improvement of charge injection in organic light emitting diodes
000498 (2008)		Study by EELS and EPES of the stability of InPO4/InP system
000607 (2008)		AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar+ ions bombardment
000679 (2007)		Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE
000897 (2005)		Quasi-Fermi level splitting and identification of recombination losses from room temperature luminescence in Cu(In1-xGax)Se2 thin films versus optical band gap
000999 (2005)		Deciphering output coupling mechanisms in spiral microcavities with femtosecond light bullets
000A92 (2004)		Pulsed laser deposition of lanthanum sulfide thin films on silicon and indium phosphide substrates : growth, characterization, and field emission properties
000B54 (2004)		Enhancement of atomic ordering in In0.53Ga0.47As/InP: a comparison between trimethylarsenic and arsine
000C69 (2003)		X-ray photoemission studies on InSb clusters
000D18 (2003)		Optical signature of atomic ordering in In0.53Ga0.47As/InP: photoluminescence properties and IR response
000F34 (2002)		Rapid thermal annealing procedure for densification of sol-gel indium tin oxide thin films
000F44 (2002)		Physical and electrical properties of thin films produced by Low Energy Cluster Beam Deposition of mixed InxSb1-x clusters
000F81 (2002)		Magnetic stabilization of the buoyant convection in the liquid-encapsulated Czochralski process
001371 (2000)		Time resolved photoluminescence of homo- and hetero-epitaxial layers of InP grown on GaAs substrates
001401 (2000)		Preparation and characterization of nanometre-size InSb particles
001973 (1998)		Magnetic field-induced inhomogeneous current distribution in metallically doped n-InSb
001B01 (1997-07-15)		Unimolecular dissociation of trivalent metal cluster ions: The size evolution of metallic bonding
001C26 (1997)		Optical properties of InP epilayers grown on (111)B GaP substrates by metalorganic chemical vapor deposition
001C30 (1997)		Optical characterization of highly mismatched InP/GaAs(111)B epitaxial heterostructures
001D72 (1996-07-15)		Transmission electron microscopy and cathodoluminescence of tensile-strained GaxIn1-xP/InP heterostructures. I. Spatial variations of the tensile stress relaxation

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