| 002855 (1992) |
| Iron redistribution studies in adjacent acceptor-doped InP layers : application to a new SI-BH laser structure |
| 002623 (1993) |
| Mapping of dopant concentrations in photorefractive InP : Fe wafers : Physique du traitement des faisceaux lumineux et des images |
| 002705 (1993) |
| Diffusion of Zn across p-n junctions in Ga0.47In0.53As |
| 002791 (1992) |
| Universal iron behaviour in Zn-, Cd- and Be-doped p-type InP |
| 002879 (1992) |
| In situ characterization of InP surfaces after low-energy hydrogen ion cleaning |
| 002925 (1992) |
| Chlorine assisted selective area epitaxy in AP-MOVPE of InP : influence of CCl4 on growth and on Zn and Si incorporation |
| 002954 (1991) |
| Comparaison des propriétés électriques des oxydes Ga2O3, In2O3 et Tl2O3 aux moyennes et hautes températures en fonction de la pression d'oxygène |
| 002960 (1991) |
| Unintentional hydrogen incorporation in crystals |
| 002B22 (1990) |
| Optical properties of the main electron-irradiation-induced defects in p-type InP : comparison with calculations for the isolated and acceptor-paired phosphorus vacancy |
| 002B53 (1990) |
| Hydrogen neutralization of acceptors in highly doped GaInAs:Zn |
| 002B81 (1990) |
| Determination of H,C,N, and O in indium phosphide by secondary-ion mass spectrometry |
| 002B91 (1990) |
| Annealing study of the electron-irradiation-induced defects H4 and E11 in InP: defect transformation (H4-E11)→H′4 |
| 002C38 (1989) |
| Spectroscopic evidence for hydrogen-phosphorus pairing in zinc-doped InP containing hydrogen |
| 002C70 (1989) |
| Hole-capture properties of the electron-irradiation-induced deep-level H5 in p-type InP: a charge-controlled bistable model |
| 002E92 (1987) |
| Recrystallization kinetics pattern in III-V implanted semiconductors |
| 002F23 (1987) |
| Fast neutron-induced defects in undoped and iron-doped indium phosphide |
| 002F42 (1987) |
| Defect-induced compensation in the bulk of implanted indium phosphide |
| 003051 (1986) |
| A simple model and calculation of the influence of doping and intrinsic concentrations on the interstitial-substitutional diffusion mechanism: application to Zn and Cd in InP |
| 003052 (1986) |
| A model of deep centers formation and reactions in electron irradiated InP |
| 003075 (1985) |
| Further evidence of chromium, manganese, iron, and zinc redistribution in indium phosphide after annealing |
| 000077 (2013) |
| 12.4% Efficient Cu(In,Ga)Se2 solar cell prepared from one step electrodeposited Cu-In-Ga oxide precursor layer |
| 000380 (2009) |
| Thermoelectric Oxides: Effect of Doping in Delafossites and Zinc Oxide |
| 000495 (2008) |
| Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures |
| 000557 (2008) |
| Influence of PbZrO3 doping on the structural and magnetic properties of BiFeO3 |
| 000623 (2007) |
| Synthesis and characterization of Ti1- 2xNbxNixO2- x/2 solid solutions |
| 000666 (2007) |
| MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications |
| 000671 (2007) |
| Interaction of hydrogen with InN thin films elaborated on InP(100) |
| 000898 (2005) |
| Pump-probe analysis of polaron decay in InAs/GaAs self-assembled quantum dots |
| 000923 (2005) |
| Non-empirical prediction of solar cell degradation in space |
| 000950 (2005) |
| Hyperfine interactions and site occupancy in Sn-doped In2O3 (ITO) |
| 000969 (2005) |
| Fe-doped CuInSe2 : CuInSe2 An ab initio study of magnetic defects in a photovoltaic material |
| 000A08 (2005) |
| Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection |
| 000A15 (2005) |
| Application of X-ray standing wave (XSW) technique for studies of Zn incorporation in InP epilayers |
| 000B16 (2004) |
| Microminiature Hall probes based on n-InSB(Sn)/i-GaAs heterostructure for pulsed magnetic field applications up to 52 T |
| 000C44 (2003-04-15) |
| Diffusion of deuterium (hydrogen) in previously hydrogenated (deuterated) III-V semiconductors |
| 001035 (2002) |
| Comparison of the gas sensing properties of tin, indium and tungsten oxides nanopowders: carbon monoxide and oxygen detection |
| 001256 (2001) |
| Electrochemical behaviour of iron(III) salen and poly(iron-salen). Application to the electrocatalytic reduction of hydrogen peroxide and oxygen |
| 001682 (1999) |
| Oxygen reduction mechanisms at p-InP and p-GaAs electrodes in liquid ammonia in neutral buffered medium and acidic media |
| 001A57 (1997-12) |
| Influence des protons dans le mécanisme de réduction de l'oxygène sur électrodes smiconductrices III-V dans l'ammoniac liquide |
| 001A82 (1997-10) |
| CROISSANCE PAR EPITAXIE EN PHASE VAPEUR AUX ORGANOMETALLIQUES DE STRUCTURES A CAVITE VERTICALES POUR TELECOMMUNICATIONS OPTIQUES |
| 001C38 (1997) |
| Metal-n-InP Rectifying properties enhancement with Zn based metallizations and diffusion at moderate annealing temperatures |
| 001E08 (1996-05) |
| Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H2/O2 gas mixture |
| 002094 (1995) |
| Protection cathodique : couplage acier-anodes solubles dans des saumures de chlorure de calcium |
| 002256 (1994-09) |
| Etude par photoémission des surfaces (111) et (110) imparfaites de silicium |
| 002364 (1994) |
| Positron lifetimes at vacancies in electron-irradiated indium phosphide |
| 002498 (1993-03) |
| Dopage indium d'hétérostructures CdTe/CdZnTe en Epitaxie par Jets moléculaires |
| 002655 (1993) |
| Highly thermally stable electrical compensation in oxygen implanted p-InAlAs |
| 002696 (1993) |
| Electrical and optical characterization of semi-insulating GaxIn1-xAsyP1-y/InP grown by gas source molecular beam epitaxy |
| 002710 (1993) |
| Defects in electron irradiated GaInP |
| 002730 (1993) |
| Carbon doping of GaxIn1-xAs by atmospheric pressure organometallic vapour phase epitaxy |
| 002735 (1993) |
| Behavior of InP:Fe under high electric field |
| 002756 (1992-11) |
| Contribution à l'étude des défauts DX et EL2 et propriétés de transport dans les structures à plan de dopage GaInAs, GaAs et dans les hétérojonctions InGaAs/AlGaAs, GaInP/GaAs |
| 002779 (1992) |
| Sur des propriétés des surfaces de quelques semiconducteurs III-V déduites de mesures de photovoltage |
| 002780 (1992) |
| Propriétés électriques et optiques de couches minces de ZnO et ZnO dopé à l'indium, obtenues par le procédé Pyrosol |
| 002785 (1992) |
| Essais d'accroissement de la barrière du contact métal/InP type n par l'introduction artificielle d'états accepteurs |
| 002794 (1992) |
| Transport properties of copper-doped indium oxide and indium tin oxide ceramics |
| 002828 (1992) |
| Optical properties of Cr3+ and Nd3+ in singly- and doubly-doped barium-indium-gallium-based fluoride glass investigated by time-resolved laser spectroscopy |
| 002871 (1992) |
| Indium doping of CdTe and Cd1-xZnxTe by molecular-beam epitaxy : uniformly and planar-doped layers, quantum wells, and superlattices |
| 002874 (1992) |
| InGaSb/GaSb photodiodes growth by MOVPE |
| 002905 (1992) |
| Electrical properties of pure In2O3 and Sn-doped In2O3 single crystals and ceramics |
| 002917 (1992) |
| Defect characterization in GaAlInAs alloys |
| 002927 (1992) |
| Characterization of deep level defects in thermally annealed Fe-doped semi-insulating InP by photoinduced current transient spectroscopy |
| 002962 (1991) |
| Ultraviolet-photoemission-spectroscopy study of the interaction of atomic hydrogen with cleaved InP : a valence-band contribution |
| 002976 (1991) |
| Steady-state and time resolved laser spectroscopy of Cr3+ in lead-based fluoride glasses |
| 002A08 (1991) |
| Luminescence characterization of CdTe:In grown by molecular beam epitaxy |
| 002A14 (1991) |
| Inhomogeneity in a semi-insulating indium phosphide ingot |
| 002A19 (1991) |
| Hydrogenation of InAs on GaAs heterostructures |
| 002A44 (1991) |
| Electron paramagnetic resonance study of thermal donors in Fe-doped InP |
| 002A98 (1990) |
| Thermal donor formation in Fe-doped semi-insulating InP |
| 002B46 (1990) |
| Induced nanosecond absorption in InP :Fe |
| 002B52 (1990) |
| Identification of the Fe acceptor llevel in Ga0.47In0.53As |
| 002B87 (1990) |
| Characterisation of semi-insulating InP:Fe |
| 002B90 (1990) |
| Assessment of Fe-doped semi-insulating InP crystals by scanning photoluminescence measurements |
| 002B97 (1990) |
| A covalently linked ruthenium tris(bipyridine)-viologen complex-polypyrrole film as a molecular photoelectrode |
| 002C13 (1989) |
| Mesures de temps de vie du positon dans un composé. II-VI: CdTe dopé indium |
| 002C17 (1989) |
| Dopage béryllium de couches InGaAs élaborées par épitaxie jet moléculaire: étude de la compensation |
| 002C36 (1989) |
| Strong enhancement of the photoluminescence of n-type indium phosphide under a cathodic polarization |
| 002C37 (1989) |
| Stabilization of photorefractive two-beam coupling in InP:Fe under high dc fields by temperature control |
| 002C42 (1989) |
| Quantitative approach to the effect of parallel stresses on soft ferrimagnetic polycrystals |
| 002C53 (1989) |
| Modifications of InP(110) surfaces induced by electron beam during Auger measurement |
| 002C54 (1989) |
| Model for resonant intensity dependence of photorefractive two-wave mixing in InP:Fe |
| 002C81 (1989) |
| Electrical characterization of as-grown, annealed and indium-doped Hg1-xZnxTe for x near 0.15 |
| 002D24 (1988) |
| Zn diffusion in doped InP: interstitial charge state and apparent activation energy |
| 002D30 (1988) |
| Time-resolved recombination dynamics of photoionizaed hydrogenlike impurities |
| 002D45 (1988) |
| Shallow diffusion of zinc into InAs and InAsSb |
| 002D54 (1988) |
| Positron lifetime measurements in as-grown and electron irradiated InSb |
| 002D59 (1988) |
| Photoluminescence enhancement of InP treated with activated hydrogen |
| 002D68 (1988) |
| Near-infrared thermally detected absorption spectroscopy and photo-acoustics in III-V materials at liquid helium temperatures |
| 002D82 (1988) |
| Interaction of atomic hydrogen with InP(100): comparison with the cleaved surface interaction |
| 002D99 (1988) |
| Fracture toughness of pure and In-doped GaAs |
| 002E08 (1988) |
| Electronic properties of cleaved CdTe(110) surfaces |
| 002E13 (1988) |
| Double-crystal x-ray investigations of semi-insulating (Ga,Fe) double-doped InP substrates |
| 002E22 (1988) |
| Characterization of the photorefractive effect in InP:Fe by using two-wave mixing under electric fields |
| 002E29 (1988) |
| Annealing and doping effects in layered In2Se3 compounds |
| 002E34 (1987) |
| Dépôts en couches épaisses de InGaP en InGaAlP sur GaAs ; étude des hétérostructures ; étude du dopage |
| 002E61 (1987) |
| X-ray topography and TEM studies of (Ga,Fe)-double-doped LEC grown InP crystals |
| 002E69 (1987) |
| Thermal activation of deformation in S-doped InP single crystals |
| 002E82 (1987) |
| Spectroscopic properties of trivalent chromium in the fluoride garnet Na3In2Li3F12 |
| 002E90 (1987) |
| Residual defect center in GaInAs/InP films grown by molecular beam epitaxy |
| 002E94 (1987) |
| Properties of InP doped with Led ions |
