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| CONTRIBUTION A L'AMELIORATION DE METHODES DE CARACTERISATIONS ELECTRIQUES DE STRUCTURES MIS (Au/BN/InP) ET MOS |
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| Etude de la technologie et des potentialités pour l'amplification de puissance hyperfréquence des transistors à effet de champ des filières phosphure AlGaInP/GaInAs et métamorphique AlInAs/GaInAs sur substrat GaAs |
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| Nanometric Cu-Co multilayers electrodeposited on indium-tin oxide glass |
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| Electrical conduction in POxNyInZ films deposited on InP |
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| Highly sensitive In0.75Ga0.25As/AlInAs Hall sensors |
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| Etude des cinétiques de réaction-diffusion dans le système or-indium-plomb. Application à l'évolution morphologique et mécanique de composants électroniques |
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| (112) and (220)/(204)-oriented CuInSe2 thin films grown by co-evaporation under vacuum |
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| Thinning of CIGS solar cells: Part I: Chemical processing in acidic bromine solutions |
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| Synthesis of Cu(In,Ga)Se2 absorber using one-step electrodeposition of Cu-In-Ga precursor |
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| Recent status and prospects of the EU-funded ALPINE project |
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| Localized surface plasmon resonance interfaces coated with poly[3-(pyrrolyl) carboxylic acid] for histidine-tagged peptide sensing |
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| Low-Temperature Transport Properties of InxFeyCo4-ySb12 |
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| Development of New Localized Surface Plasmon Resonance Interfaces Based on Gold Nanostructures Sandwiched between Tin-Doped Indium Oxide Films |
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| Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound |
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| Impact of Cu-rich growth on the CuIn1-xGaxSe2 surface morphology and related solar cells behaviour |
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| Experimental study of the ternary Ag-Cu-In phase diagram |
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| Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies |
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| Device based on the coupling of an organic light-emitting diode with a photoconductive material |
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| Acoustically induced light gyration in nickel nanoparticles |
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| AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar+ ions bombardment |
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| La conversion photovoltaïque de l'énergie solaire |
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| Synthesis and characterization of Ti1- 2xNbxNixO2- x/2 solid solutions |
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| Self-assembly monolayer of anatase titanium oxide from solution process on indium tin oxide glass substrate for polymer photovoltaic cells |
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| Performance of Culn1-XGaxSe2/(PVD)In2S3 solar cells versus gallium content |
| 000668 (2007) |
| Intermediate temperature solid oxide fuel cell based on BaIn0.3Ti0.7O2.85 electrolyte |
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| Influence of sodium compounds at the Cu(In, Ga)Se2/(PVD)In2S3 interface on solar cell properties |
| 000709 (2007) |
| Conducting polymer/gold nanoparticle hybrid materials: A step toward electroactive plasmonic devices |
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| Fabrication and characterisation of CuInSe2/Si(1 0 0) thin films by the stacked elemental layer (SEL) technique |
| 000967 (2005) |
| Fermi surface gapping and nesting in the surface phase transition of Sn/Cu(100) |
| 000977 (2005) |
| Ellipsometric spectroscopy on polycrystalline CuIn1-xGaxSe2: Identification of optical transitions |
| 000982 (2005) |
| Electrical properties of doped 3-tetradecylpolypyrrole/metal devices |
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| Correlation between photoluminescence N-InP and morphology of Cu electrodeposition |
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| Gold particle interaction in regular arrays probed by surface enhanced Raman scattering |
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| Influence of oxygen plasma on electrical and physical parameters of Au-oxide-n-InP structures |
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| Implementation of an all-electron GW approximation based on the projector augmented wave method without plasmon pole approximation: Application to Si, SiC, AlAs, InAs, NaH, and KH |
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| Formation of CuInSe2 by the annealing of stacked elemental layers: analysis by in situ high-energy powder diffraction |
| 000E16 (2002-12-15) |
| Enhanced substrate-induced coupling in two-dimensional gold nanoparticle arrays |
| 000F32 (2002) |
| Real examples of surface reconstructions determined by direct methods |
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| Nanoanalysis of stacked Cu/In/Se thin films |
| 001049 (2002) |
| A thermodynamic optimization of the Cu-In system |
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| Atomic slide puzzle: Self-diffusion of an impure atom |
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| Numerical analysis of forward I-V characteristics of Au/InP interface restructured by antimony |
| 001331 (2000-07) |
| ETUDE DE COMPOSES SULFOSPINELLES DE CUIVRE, D'INDIUM ET D'ETAIN COMME NOUVEAUX MATERIAUX D'ELECTRODE POUR BATTERIES «LITHIUM-ION» |
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| The deposition of group 6A-derived inorganic semiconductor films as studied by quartz crystal microgravimetry |
| 001403 (2000) |
| Polycrystalline CuInSe2 thin films synthesized by microwave irradiation |
| 001438 (2000) |
| Improved bias-thermal-stress method for the insulator charge measurement of BN/InP MIS structures |
| 001462 (2000) |
| Effect of InSb layer on the interfacial and electrical properties in the structures based on InP |
| 001572 (1999-05-15) |
| Physical parameters of Au-n-InP structures |
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| Strain relaxation at cleaved surfaces studied by atomic force microscopy |
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| Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE |
| 001688 (1999) |
| Optical and mechanical design of an InP based tunable detector for gas sensing applications |
| 001742 (1999) |
| Electrochemical synthesis and structural studies of copolymers based on the electrooxidation of pyrrole and some salen compounds |
| 001744 (1999) |
| Electrical study of the Au/InSb/InP system |
| 001746 (1999) |
| Electrical characterization of the Au/InP(100) and Au/InSb/InP(100) structures |
| 001753 (1999) |
| Effect of Cu on InSe/Si(111) heterojunctions |
| 001757 (1999) |
| Cu(In,Ga)Se2 solar cells: device stability based on chemical flexibility |
| 001761 (1999) |
| Cobalt contacts on indium arsenide |
| 001793 (1998-12) |
| «SIMULATION MONTE-CARLO EN REGIMES STATIQUE ET DYNAMIQUE DE HEMT DE LA FILIERE InP» |
| 001794 (1998-12) |
| Ellipsométrie spectroscopique ex situ à plusieurs angles d'incidence : caractérisation de couches massives et de structures multicouches |
| 001815 (1998-11) |
| Application de l'imagerie de photoluminescence à l'étude de la distribution spatiale de propriétés physico-chimiques de semiconducteurs pour la réalisation de dispositifs |
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| Modelization and characterization of Au/InSb/InP Schottky systems as a function of temperature |
| 001985 (1998) |
| Investigation of Be diffusion in InGaAs using Kick-out mechanism |
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| Electrochemical characterisation of a semiconductor-metal junction : n-type InP|Cu; influence of the structure of the metallic layer |
