| 002905 (1992) |
| Electrical properties of pure In2O3 and Sn-doped In2O3 single crystals and ceramics |
| 002A93 (1990) |
| Transport measurements in lithium-intercalated In2Se3 |
| 002E29 (1988) |
| Annealing and doping effects in layered In2Se3 compounds |
| 002F35 (1987) |
| Electrical properties of lithium-intercalated InSe |
| 002512 (1993) |
| Magnétorésistance de n-CuInSe2 en régime métallique |
| 002694 (1993) |
| Electrical conduction in low temperature grown InP |
| 002780 (1992) |
| Propriétés électriques et optiques de couches minces de ZnO et ZnO dopé à l'indium, obtenues par le procédé Pyrosol |
| 002907 (1992) |
| Electrical behavior of Yb ion in p- and n-type InP |
| 002A63 (1991) |
| Confirmation of superconductivity in (InPb)Sr2(YCa)Cu2Oz |
| 002B34 (1990) |
| Magnetotransport measurements in GaInP/GaAs heterostructures |
| 002B77 (1990) |
| Electrical and optical properties of rare earth dopants (Yb, Er) in n-type III-V (InP) semiconductors |
| 002C17 (1989) |
| Dopage béryllium de couches InGaAs élaborées par épitaxie jet moléculaire: étude de la compensation |
| 002C29 (1989) |
| Two-dimensional conductivity in the layered semiconductor InSe at low temperatures owing to weak localization |
| 002C81 (1989) |
| Electrical characterization of as-grown, annealed and indium-doped Hg1-xZnxTe for x near 0.15 |
| 002C82 (1989) |
| Effect of annealing on structure and electrical conductivity of evaporated indium telluride |
| 002D56 (1988) |
| Physical parameters of GaInAs/Si3N4 interface states obtained by the conductance method |
| 002D76 (1988) |
| Lithium insertion into indium sesquiselenide |
| 002E64 (1987) |
| Two-dimensional defects in InSe |
| 003029 (1986) |
| Electrical and optical properties of In2Se3 thin films |
| 000002 (2014) |
| Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se2 solar cells |
| 000061 (2013) |
| Epitaxial undoped indium oxide thin films: Structural and physical properties |
| 000461 (2009) |
| Effect of pressure on electrical properties of short period InAs/GaSb superlattice |
| 000530 (2008) |
| Non-Fermi liquid behavior in the magnetotransport of quasi two-dimensional heavy Fermion compounds CeMIn5 |
| 000614 (2007) |
| Transport measurements under pressure in III-IV layered semiconductors |
| 000628 (2007) |
| Striking similarities between HTSC and quasi-2D HF CeRIn5 |
| 000650 (2007) |
| Non-fermi liquid behavior in the magnetotransport of CeMIn5(M: Co and Rh) : Striking similarity between quasi two-dimensional heavy fermion and high-Tc cuprates |
| 000A02 (2005) |
| Crystal symmetry and pressure effects on the valence band structure of γ-InSe and ε-GaSe : Transport measurements and electronic structure calculations |
| 000B16 (2004) |
| Microminiature Hall probes based on n-InSB(Sn)/i-GaAs heterostructure for pulsed magnetic field applications up to 52 T |
| 000F08 (2002) |
| Study of low temperature elaborated tailored optical band gap β-In2S3-3xO3x thin films |
| 000F16 (2002) |
| Structural, optical and electrical properties of the ordered vacancy compound CuIn3Se5 thin films fabricated by flash evaporation |
| 001258 (2001) |
| Electrical transport properties in (111) growth-axis GaAlAs/GaInAs heterostructures |
| 001299 (2000-12) |
| Etude du processus de dépôt de couches minces par la Technique du Transport en Phases Vapeurs à Courte Distance (Close-Spaced Vapor Transport - CSVT) de quelques chalcogénures : Cu(In,Ga)(S,Se,Te)2, Cu2Te, SnS, SnSe et PbTe1-xSex |
| 001683 (1999) |
| Optimization of In2O3 transparent conductive films by Ge ion implantation |
| 001893 (1998-01) |
| Étude et essai d'optimisation des propriétés électroniques de couches minces d'un semi-conducteur dégénéré : ITGO (oxyde d'indium dopé à l'étain et au germanium) |
| 001A11 (1998) |
| Electron scattering mechanisms in ITGO (Sn+Ge doped In2O3) thin films for low emittance window coatings |
| 001A15 (1998) |
| Electrical characterisation of CuInSe2 thin films for solar cells applications |
| 001A81 (1997-10) |
| Contribution à l'étude du transport électronique dans les systèmes multi-couches à base de semi-conducteurs III-V |
| 002529 (1993) |
| Time resolved photoluminescence of Cd-doped InSe |
| 002589 (1993) |
| Optimization of fluoride ion conduction in new fluorite-type anion excess solid solutions involving two substitutional cations |
| 002688 (1993) |
| Electron paramagnetic resonance study of the two-dimensional electron gas in Ga1-xAIxSb/InAs single quantum wells |
| 002695 (1993) |
| Electrical characterization of lattice-mismatched InP/InxGa1-xAs/InP heterostructures and PIN photodiodes grown by LP-MOCVD |
| 002735 (1993) |
| Behavior of InP:Fe under high electric field |
| 002798 (1992) |
| The question of a Hall-insulator state in the resistivity of a bulk semiconductor in very high magnetic fields |
| 002812 (1992) |
| Shubnikov-de Haas oscillations in n-CuInSe2 |
| 002828 (1992) |
| Optical properties of Cr3+ and Nd3+ in singly- and doubly-doped barium-indium-gallium-based fluoride glass investigated by time-resolved laser spectroscopy |
| 002840 (1992) |
| Neutron diffraction studies of TbAg2In and DyAg2In |
| 002864 (1992) |
| Influence of thermal treatment under various oxygen pressures on the electronic properties of ceramics and single crystals of pure and tin-doped indium oxide |
| 002897 (1992) |
| Far-infared spectra of indium selenide single crystals |
| 002906 (1992) |
| Electrical characterization of lithium intercalated InSe |
| 002927 (1992) |
| Characterization of deep level defects in thermally annealed Fe-doped semi-insulating InP by photoinduced current transient spectroscopy |
| 002936 (1992) |
| Copper Weberites : Crystal Structure and Magnetic Investigation of Na2CuGaF7 and Na2CuInF7 |
| 002954 (1991) |
| Comparaison des propriétés électriques des oxydes Ga2O3, In2O3 et Tl2O3 aux moyennes et hautes températures en fonction de la pression d'oxygène |
| 002955 (1991) |
| Caractérisation : étude électrique et optique de In2O3 en couches minces préparées par évaporation thermique réactive |
| 002963 (1991) |
| Tunnel deep level transient spectroscopy on a single quantum well |
| 002965 (1991) |
| Tin-indium sulfide spinels. X-ray study and evidence of tin mixed-valence from 119Sn Mössbauer spectroscopy |
| 002969 (1991) |
| The temperature dependence of the inelastic scattering time in metallic n-InP |
| 002983 (1991) |
| Protonic conduction in anhydrous oxonium alums stable to 175°C |
| 002A04 (1991) |
| Metal organic molecular beam epitaxy growth of Ga0.5In0.5P/GaAs quantum well structures |
| 002A19 (1991) |
| Hydrogenation of InAs on GaAs heterostructures |
| 002A37 (1991) |
| Experimental analysis of temperature dependence of deep-level capture cross-section properties at the Au oxidized InP interface |
| 002A38 (1991) |
| Excitation mechanisms of rare earth (Yb) luminescence in III-V semiconductors (InP) |
| 002A58 (1991) |
| Critical behaviour of the conductivity in metallic n-type InP close to the metal-insulator transition |
| 002B05 (1990) |
| Study of p-TO-n-type conversion in bulk Hg1-xZnxTe near x=0.15 |
| 002B23 (1990) |
| Optical properties of In2Se3 phases |
| 002B39 (1990) |
| Liquid semiconductors |
| 002B41 (1990) |
| Interfacial traps in Ga0.47In0.53As/InP heterostructures |
| 002B61 (1990) |
| Fluorescence mechanisms in Tm3+ singly doped and Tm3+, Ho3+ doubly doped indium-based fluoride glasses |
| 002B76 (1990) |
| Electrical conductivity, optical absorption, and photoconductivity measurements of well oriented indium telluride thin films |
| 002B84 (1990) |
| Concerning lattice defects and defect levels in CuInSe2 and the I-III-VI2 compounds |
| 002C01 (1990) |
| 2.5 μm GaInAsSb lattice-matched to GaSb by liquid phase epitaxy |
| 002C13 (1989) |
| Mesures de temps de vie du positon dans un composé. II-VI: CdTe dopé indium |
| 002C28 (1989) |
| Two-dimensional quantum corrections to the magnetoconductance of InSe at low temperatures owing to weak localization |
| 002C32 (1989) |
| Study of hopping in two dimensional electron gas in InGaAs/InP heterostructures with two subbands |
| 002C51 (1989) |
| New investigations on magnetic and neutron diffraction properties of Y2Cu2O5 and related oxides |
| 002C90 (1989) |
| Absolute photoionization cross-sections of 3d ions in InP: a comparison between experiment and theory |
| 002C94 (1988 publ. 1989) |
| ESR study of nickel (+ III) and copper (+ III) in fluorides with cryolite or elpasolite-type structure |
| 002D31 (1988) |
| Time-resolved far-infrared magnetospectroscopy of hydrogenlike impurities in III-V semiconductors |
| 002D40 (1988) |
| Structural and magnetic properties of ternary silver fluorides with a cryolite related structure |
| 002D58 (1988) |
| Photoluminescence spectra of Li-intercalated indium selenide |
| 002D64 (1988) |
| Optical properties of Tm3+ ions in indium-based fluoride glasses |
| 002D77 (1988) |
| Investigations of the quantum photovoltaic effect in InAs-GaSb semiconductor superlattices |
| 002D92 (1988) |
| High quality ultrathin InAs/GaAs quantum wells grown by standard and low-temperature modulated-fluxes molecular beam epitaxy |
| 002E04 (1988) |
| Experimental investigation on the spin glass dynamics in CdIn0.3Cr1.7S4 from noise measurements |
| 002E14 (1988) |
| Diffusion and short-range order in Pb1-xInxFe2+x (0≤x≤0.25) superionic conductor |
| 002E56 (1987) |
| Etude par RMN du 19F de la mobilité anionique dans la solution solide de type fluorine Pb1-xInxF2+x et dans la phase ordonnée Pb2InF7 |
| 002E82 (1987) |
| Spectroscopic properties of trivalent chromium in the fluoride garnet Na3In2Li3F12 |
| 002E93 (1987) |
| Radiative decay processes of vanadium ions in III-V compound semiconductors |
| 002E99 (1987) |
| Photoluminescence investigation of InGaAS-InP quantum wells |
| 002F87 (1986) |
| The Anderson transition in a magnetic field: experimental evidence for a new phase diagram |
| 003028 (1986) |
| Electrical transport properties of impurity-doped In2Se3 |
| 003074 (1985) |
| Growth of ultrapure and Si-doped InP by low pressure metalorganic chemical vapor deposition |
| 000003 (2014) |
| Effects of indium concentration on the properties of In-doped ZnO films: Applications to silicon wafer solar cells |
| 000032 (2013) |
| Persistent enhancement of the carrier density in electron irradiated InAs nanowires |
| 000057 (2013) |
| Flexible transparent conductive materials based on silver nanowire networks: a review |
| 000063 (2013) |
| Electrochemical analysis of a PPV derivative thin film doped with β-ketoimine calix[4]arene in the dark and under illumination for the detection of Hg2+ ions |
| 000069 (2013) |
| Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes |
| 000072 (2013) |
| Ce2PdIng, Ce3PdIn11 and Ce5Pd2In19-members of homological series based on AuCu3- and PtHg2-type structural units |
| 000081 (2012) |
| Why MnIn2O4 spinel is not a transparent conducting oxide? |
| 000119 (2012) |
| Indium oxide co-doped with tin and zinc: A simple route to highly conducting high density targets for TCO thin-film fabrication |
| 000142 (2012) |
| A gradual annealing of amorphous sputtered indium tin oxide: Crystalline structure and electrical characteristics |
