| 002D94 (1988) |
| Growth of GaInAsSb alloys by MOCVD and characterization of GaInAsSb/GaSb p-n photodiodes |
| 002D96 (1988) |
| Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy |
| 002F17 (1987) |
| Growth conditions and optical properties of InxSe1-x thin films |
| 002F24 (1987) |
| Experimental evidence of difference in surface and bulk compositions of AlxGa1-xAs, AlxIn1-xAs and GaxIn1-xAs epitaxial layers grown by molecular beam epitaxy |
| 000902 (2005) |
| Physico-chemical characterisation of Cu(In,Al)Se2 thin film for solar cells obtained by a selenisation process |
| 002662 (1993) |
| Growth of InGaAs/GaAs quantum wells with perfectly abrupt interfaces by molecular beam epitaxy |
| 002730 (1993) |
| Carbon doping of GaxIn1-xAs by atmospheric pressure organometallic vapour phase epitaxy |
| 002803 (1992) |
| Surfactant mediated epitaxial growth of InxGa1-xAs on GaAs (001) |
| 002806 (1992) |
| Structural stuty of tin-doped indium oxide thin films using X-ray absorption spectroscopy and X-ray diffraction. I: Description of the indium site |
| 002807 (1992) |
| Structural study of tin-doped indium oxide thin films using X-ray absorption spectroscopy and X-ray diffractio. II: Tin environment |
| 002854 (1992) |
| Liquid phase epitaxy and characterization of InAs1-x-ySbxPy on (100) InAs |
| 002928 (1992) |
| Caractérisation du domaine de solution solide de structure spinelle dans le systéme In2S3-Cu2S-CuS |
| 002975 (1991) |
| Strain induced 2D-3D growth mode transition in molecular beam epitaxy of InxGa1-xAs on GaAs (001) |
| 002A23 (1991) |
| High quality InP and In1-xGaxAsyP1-y grown by gas source MBE |
| 002B40 (1990) |
| Kinetic processes in epitaxy of GaxIn1-xAs on InP(100) by hydride vapour phase epitaxy |
| 002D01 (1988) |
| Sur les deux phases Sn5,5In11S22 (ou SnIn2S4) et Sn5In14S26 |
| 002D32 (1988) |
| Thermodynamic analysis of the molecular beam epitaxy of AlInAs alloys |
| 002D38 (1988) |
| Structure of the orthorhombic phase of Li1+xTi2-xInxP3O12, x=1.08 |
| 002E21 (1988) |
| Chemical ordering in GaxIn1-xP semiconductor alloy grown by metalorganic vapor phase epitaxy |
| 002E32 (1987) |
| Préparation d'hétérostructures Ga In As Sb / Ga Sb émettant à 2,5 μm |
| 002E72 (1987) |
| The influence of supercooling on the liquid phase epitaxial growth of InAs1-xSbx on (100) GaSb substrates |
| 002E75 (1987) |
| Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxy |
| 002E76 (1987) |
| Substituted lanthanum hexagallates as epitaxial growth substrates |
| 002E79 (1987) |
| Strain-induced In incorporation coefficient variation in the growth of Al1-x Inx as alloys by molecular beam epitaxy |
| 002F38 (1987) |
| Elastic state and thermodynamical properties of inhomogeneous epitaxial layers: application to immiscible III-V alloys |
| 003039 (1986) |
| Chemical spray pyrolysis of CuInSe2 thin films |
| 000056 (2013) |
| Formation mechanisms of Cu(In,Ga)Se2 solar cells prepared from electrodeposited precursors |
| 000228 (2011) |
| Electrochemical study of one-step electrodeposition of copper-indium-gallium alloys in acidic conditions as precursor layers for Cu(In,Ga)Se2 thin film solar cells |
| 000247 (2011) |
| Assessment of absorber composition and nanocrystalline phases in CuInS2 based photovoltaic technologies by ex-situ/in-situ resonant Raman scattering measurements |
| 000862 (2006) |
| A study of bulk NaxCu1-xIn5S8 and its impact on the Cu(In,Ga)Se2/In2S3 interface of solar cells |
| 000D75 (2003) |
| Evolution of the properties of spray-deposited CuInS2 thin films with post-annealing treatment |
| 001016 (2002) |
| Fabrication and study of photovoltaic material CuInxGa1-xSe2 bulk and thin films obtained by the technique of close-spaced vapor transport |
| 002383 (1994) |
| Luminescence of Ce3+ in the InxSc1-xBO3 (0≤x≤1) solid solution |
| 002517 (1993) |
| Découpage du ternaire ytterbium-indium-soufre : description crystallographique des phases présentes |
| 002681 (1993) |
| Epitaxial growth of highly strained InxGa1-xAs on GaAs(001) : the role of surface diffusion length |
| 002747 (1993) |
| A comprehensive optimization of InAlAs molecular beam epitaxy for InGaAs/InAlAs HEMT technology |
| 002850 (1992) |
| MOCVD growth of CuInSe2 : first results |
| 002869 (1992) |
| Indium fluoride thin films prepared by sublimation under vacuum |
| 002926 (1992) |
| Characterization of the single phase region with spinel structure in the ternary system In2S3-FeS-FeS2 |
| 002941 (1991-02) |
| Etude de la croissance du système GaAlInP/GaInP/GaAs par épitaxie en phase vapeur aux organométalliques pour la réalisation de lasers visibles |
| 002950 (1991) |
| Etudes sur la croissance, la structure et la composition de couches minces de ZnO et ZnO dopé à l'indium, obtenues par procédé pyrosol |
| 002965 (1991) |
| Tin-indium sulfide spinels. X-ray study and evidence of tin mixed-valence from 119Sn Mössbauer spectroscopy |
| 002974 (1991) |
| Study of CuCaxIn1-xSe2 and CuGaxIn1-xTe2 compounds |
| 002A16 (1991) |
| Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys |
| 002A65 (1991) |
| Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures : growth kinetics, electrical and optical properties |
| 002A73 (1991) |
| A new type of misfit dislocation multiplication process in InxGa1-xAs/GaAs strained-layer superlattices |
| 002A81 (1990) |
| Passivation de InSb : croissance et composition chimique de sulfures natifs obtenus par plasma haute fréquence |
| 002C22 (1989) |
| Contribution à la cristallochimie des isotypes de ThCr2Si2 et CaBe2Ge2. I: Les systèmes LaT2-xT′xGe2 (T,T′=Ru, Rh, Pd, Ir, Pt) et La1-xCaxIr2Ge2: distribution des éléments de transition dans le type CaBe2Ge2 |
| 002C26 (1989) |
| Very uniform epitaxy |
| 002C40 (1989) |
| Recent advances in III-V compounds on silicon |
| 002C41 (1989) |
| Quantitative evaluation of the surface segregation in III-V ternary alloys by X-ray photoelectron spectroscopy |
| 002C59 (1989) |
| Investigation of photomodified semiconductor/electrolyte interfaces: The n-InSe/CulSe3-Se0/polyiodide system |
| 002D14 (1988) |
| Distribution cationique dans les ferrites d'indium de type spinelle InMFeO4 (M = Ni, Mn, Co, Mg) |
| 002D19 (1988) |
| Composition chimique des sulfures natifs formés sur InP par plasma indirect |
| 002D49 (1988) |
| Role of elastic strain and relaxation on the molecular-beam epitaxial growth of III-V alloy pseudomorphic layers |
| 002D62 (1988) |
| Optical studies of misfit strain effects in GaxIn1-x P epitaxial layers on (001) GaAs substrates |
| 002D67 (1988) |
| Neutron powder diffraction study of solid solution Li1+xTi2-xInxP3O12. I: 0.0≤x≤0.4 |
| 002D74 (1988) |
| Mass spectrometric evidence of instability in In1-xGaxAs compounds: activity measurements of InAs |
| 002D91 (1988) |
| High-quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low-pressure metalorganic chemical vapor deposition |
| 002D95 (1988) |
| Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy |
| 002E13 (1988) |
| Double-crystal x-ray investigations of semi-insulating (Ga,Fe) double-doped InP substrates |
| 002E23 (1988) |
| Characterization of SrF2 thin films and of SrF2/InP structures |
| 002E77 (1987) |
| Study of static atomic displacements by channelled-electron-beam-induced X-ray emission : Application to In0,53Ga0.47 As alloys |
| 002E81 (1987) |
| Sprayed CdS/CuInSe2 solar cells: first results |
| 002E92 (1987) |
| Recrystallization kinetics pattern in III-V implanted semiconductors |
| 002F05 (1987) |
| Monolayer epitaxy of III-V compounds by low-pressure metalorganic chemical vapor deposition |
| 002F37 (1987) |
| Electrical and photovoltaic properties of InxSe1-x thin films |
| 002F66 (1986) |
| Cellules photovoltaïques de InSe monocristallin et en couches minces |
| 002F67 (1986) |
| Synthèse et caractérisation cristallographique d'un système conducteur ionique Li1+xTi2-xInx(PO4)3 |
| 002F71 (1986) |
| Etude structurale de In2Sn3S7 par spectrométrie Mössbauer de 119Sn et diffraction des rayons X |
| 003008 (1986) |
| New mixed oxides as thin film transparent electrodes: spinel phase CdIn2O4 |
| 003018 (1986) |
| InGaAsP superlattices grown by liquid-phase epitaxy |
| 003023 (1986) |
| Ga1-xInxAs-InP abrupt heterostructures grown by MOVPE AT ATMOSPHERIC PRESSURE |
| 003090 (1984) |
| Applications du S.T.E.M. à la microanalyse des semiconducteurs III-V |
| 000003 (2014) |
| Effects of indium concentration on the properties of In-doped ZnO films: Applications to silicon wafer solar cells |
| 000044 (2013) |
| MoO3/CuI hybrid buffer layer for the optimization of organic solar cells based on a donor-acceptor triphenylamine |
| 000050 (2013) |
| Influence of Mo back contact porosity on co-evaporated Cu(In,Ga)Se2 thin film properties and related solar cell |
| 000053 (2013) |
| Highly flexible, conductive and transparent MoO3/Ag/MoO3 multilayer electrode for organic photovoltaic cells |
| 000055 (2013) |
| Frequential and temporal analysis of two-dimensional photonic crystals for absorption enhancement in organic solar cells |
| 000110 (2012) |
| Nanostructured thermally evaporated CuInSe2 thin films synthesized from mechanically alloyed powders and self-combustion ingot |
| 000151 (2011) |
| Thinning of CIGS solar cells: Part II: Cell characterizations |
| 000152 (2011) |
| Thinning of CIGS solar cells: Part I: Chemical processing in acidic bromine solutions |
| 000168 (2011) |
| Sulfurization of Cu-In electrodeposited precursors for CuInS2-based solar cells |
| 000214 (2011) |
| High efficiency cadmium free Cu(In,Ga)Se2 thin film solar cells terminated by an electrodeposited front contact |
| 000288 (2010) |
| Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materials |
| 000292 (2010) |
| Non-vacuum methods for formation of Cu(In, Ga)(Se, S)2 thin film photovoltaic absorbers |
| 000306 (2010) |
| Influence of anode roughness and buffer layer nature on organic solar cells performance |
| 000357 (2010) |
| Annealing effect on the physical properties of evaporated In2S3 films |
| 000385 (2009) |
| The Zn(S,O,OH)lZnMgO Buffer in Thin-Film Cu(In,Ga)(Se,S)2-Based Solar Cells Part II: Magnetron Sputtering of the ZnMgO Buffer Layer for In-Line Co-Evaporated Cu(In,Ga)Se2 Solar Cells |
| 000436 (2009) |
| Indium sulfide and relatives in the world of photovoltaics |
| 000483 (2008) |
| Ultra-thin metal layer passivation of the transparent conductive anode in organic solar cells |
| 000616 (2007) |
| Thermodynamic and experimental study of chemical bath deposition of Zn(S, O, OH) buffer layers in basic aqueous ammonia solutions. Cell results with electrodeposited CuIn(S, Se)2 absorbers |
| 000642 (2007) |
| Organic solar cells with an ultra thin organized hole transport layer : Organic electronics |
| 000664 (2007) |
| Magnetic properties of bulk Fe-doped indium oxide |
| 000775 (2006) |
| Some physical investigations on AgInS2 sprayed thin films |
| 000840 (2006) |
| Elaboration of transparent conductive oxide films for flexible organic electroluminescent devices |
| 000850 (2006) |
| Comparative investigation of solar cell thin film processing using nanosecond and femtosecond lasers |
| 000869 (2005) |
| Two-stage growth of smooth Cu(In,Ga)Se2 films using end-point detection |
| 000874 (2005) |
| The magnetic instability of Yb2Pd2(In, Sn) in a non-Fermi liquid environment |
| 000875 (2005) |
| The great potential of coupled substitutions in In2O3 for the generation of bixbyite-type transparent conducting oxides, In2-2xMxSnxO3 |
