Le cluster Binary compounds - Indium phosphides
| 000657 (2007) | Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures | |
| 001308 (2000-11) | Interaction électrons-phonons dans les puits et boîtes quantiques de semiconducteurs. Une étude par spectrométries optiques | |
| 001955 (1998) | Photoluminescence studies of As-P exchange in GaAs/GaInP2 quantum wells grown by chemical beam epitaxy | |
| 001C02 (1997) | Study of growth rate and composition variations in metalorganic vapour phase selective area epitaxy at atmospheric pressure and application to the growth of strained layer DBR lasers | |
| 002271 (1994-07) | Contribution à l'optimisation de structures laser à puits quantiques contraints sur la maille d'InP | |
| 002283 (1994-06) | Etude par microscopie électronique en transmission de structures laser (GaInAsP/InP) et de la découpe de puits quantiques (GaAs, GaAlAs) par un mécanisme de glissement de dislocations | |
| 002437 (1994) | Band-structure engineering in straining semiconductor lasers : Strained-layer optoelectronics materials and devices | |
| 002489 (1993-06) | Elaboration par LP-MOCVD du système GaAs-GaInP. Application aux composants | |
| 000274 (2010) | QD laser on InP substrate for 1.55 μm emission and beyond | |
| 000654 (2007) | Narrow linewidth, high-power al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications | |
| 000725 (2007) | Analysis of the double laser emission occurring in 1.55-μm InAs-InP (113)B quantum-dot lasers | |
| 000734 (2007) | 1516 nm room temperature CW operation of quantum dot InAs/InP(311)B singlemode laser | |
| 000736 (2007) | 1.3 μm VCSELs : InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells and InAs/GaAs quantum dots-three candidates as active material | |
| 000738 (2006) | Structures à îlots quantiques sur substrat InP(100) pour l'émission dans le moyen infrarouge (2-5μm) | |
| 000817 (2006) | InP based QCL in MBE production machine | |
| 000844 (2006) | Design and fabrication of GaInAsP/InP VCSEL with two a-Si/a-SiNx Bragg reflectors | |
| 000855 (2006) | Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers | |
| 000860 (2006) | Al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications | |
| 000904 (2005) | Photoluminescence characteristics of 1.5-μm Ga1-xInxNyAs1-y/GaAs structures grown by molecular beam epitaxy | |
| 000914 (2005) | Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer | |
| 000929 (2005) | Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5μm on InP(311)B substrates | |
| 000963 (2005) | GSMBE growth of GaInAsP/InP 1.3μm-TM-lasers for monolithic integration with optical waveguide isolator | |
| 000976 (2005) | Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates | |
| 000996 (2005) | Design of monolithic integrated Bragg gratings in InGaAsP/InP materials as chirped pulse compressors | |
| 000A20 (2005) | Accurate tuning of emission of GaInAsP/InP heterostructures in multiwafer gas-source molecular-beam epitaxy | |
| 000B69 (2004) | Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy | |
| 000D12 (2003) | Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence | |
| 000D61 (2003) | Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser | |
| 001089 (2001-07) | Croissance et caractérisations des boites quantiques InAs/InP(113)B pour la réalisation d'un laser émettant à 1.55 μm | |
| 001175 (2001) | Photoluminescence excitation spectroscopy of MBE grown InGaN quantum wells and quantum boxes | |
| 001191 (2001) | Observation of dislocation generation in highly strained quantum well lasers during operation | |
| 001231 (2001) | InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties | |
| 001240 (2001) | Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides | |
| 001314 (2000-10) | Croissance auto-organisée de fils et boîtes quantiques d'InAs / InP(001) pour composants optoélectroniques | |
| 001419 (2000) | Monolayer coverage effects on size and ordering of self-organized InAs islands grown on (1 13)B InP substrates | |
| 001422 (2000) | MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization | |
| 001661 (1999) | Some potentialities of gas-source molecular beam epitaxy with aluminium and phosphorus | |
| 001721 (1999) | Imaging energy analyzer for RHEED : energy filtered diffraction patterns and in situ electron energy loss spectroscopy | |
| 001774 (1999) | Alloying effects in self-assembled InAs/InP dots | |
| 001813 (1998-11) | Epitaxie par jets moléculaires de GaN, AlN, InN et leurs alliages : physique de la croissance et réalisation de nanostructures | |
| 001908 (1998) | XPS study of GaInP on GaAs interface | |
| 001A38 (1998) | A study of GaInP/GaAs interfaces : metallurgical coupling of successive quantum wells | |
| 001B06 (1997-07) | Contribution à l'étude d'interfaces de semi-conducteurs III-V par spectroscopies de photoélectrons : cas de l'interface GaAs-GaInP | |
| 001B22 (1997-06) | Préparation et évaluation de substrats d'InP adaptés à différents types d'épitaxie | |
| 001C11 (1997) | Selective area MOVPE growth of InP, InGaAs and InGaAsP using TBAs and TBP at different growth conditions | |
| 001C52 (1997) | Indium surface segregation during chemical beam epitaxy of Ga1-xInxAs/GaAs and Ga1-xInxP/GaAs heterostructures | |
| 001C65 (1997) | High temperature (Ga)InAsP/high band gap GaInAsP barriers 1.3 μm SL-MQW lasers grown by gas source MBE | |
| 001C69 (1997) | Growth of InGaAs/InP structures by gas source molecular beam epitaxy on SiO2-patterned substrates for optoelectronic applications | |
| 001F48 (1996) | Evaluation of H-plasma and thermal oxide desorption procedures for MBE regrowth of an InP/InGaAs/InP quantum well | |
| 001F49 (1996) | Etching of deep V-groove channels on a (001) InP substrate and regrowth by gas source molecular beam epitaxy | |
| 001F71 (1996) | Benefits of chemical beam epitaxy for micro and optoelectronic applications | |
| 002039 (1995-07) | Réalisation d'un super-réseau à contraintes balancées InP/GaAs/GaP/GaAs par Epitaxie par jets moléculaires d'organo-métalliques | |
| 002100 (1995) | Analyse des bruits blancs optique et électrique d'une tête d'émission laser à réaction répartie en présence d'une réinjection optique | |
| 002102 (1995) | Uniform selective area growth of GaAs and GaInP by low temperature chemical beam epitaxy | |
| 002142 (1995) | Optical investigation of the self-organized grown of InAs/GaAs quantum boxes | |
| 002239 (1994-11) | Développement, mise en œuvre, et qualification d'un réacteur spécifique à l'épitaxie par jets moléculaires d'organo-métalliques (EJMOM) | |
| 002472 (1993-10) | Effet tunnel résonnant dans des hétérostructures de matériaux semiconducteurs pour différentes situations de confinement | |
| 002634 (1993) | Lateral thickness modulations in alternate tensile-compressive strained GaInAsP multilayers grown by gas source molecular beam epitaxy | |
| 000051 (2013) | InP1-xAsx quantum dots in InP nanowires: A route for single photon emitters | |
| 000097 (2012) | Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE | |
| 000217 (2011) | Growth and characterization of polar (0 0 0 1) and semipolar (11-22) InGaN/GaN quantum dots | |
| 000259 (2010) | Theoretical and experimental investigations of the temperature dependent continuous wave lasing characteristics and the switch-on dynamics of an InAs/InGaAs quantum-dot semiconductor laser | |
| 000270 (2010) | Sb-based laser sources grown by molecular beam epitaxy on silicon substrates | |
| 000278 (2010) | Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast | |
| 000358 (2010) | Analysis of carriers dynamics and laser emission in 1.55 μm InAs/InP(113)B quantum dot lasers | |
| 000382 (2009) | Theoretical analysis of 1.55-μm InAs/InP (113B) quantum dot lasers based on a multi-population rate equation model | |
| 000397 (2009) | Spectral Analysis of 1.55-μm InAs-InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model | |
| 000454 (2009) | Experimental and Theoretical Study of InAs/InGaAsP/InP Quantum Dash Lasers | |
| 000456 (2009) | Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure | |
| 000465 (2009) | Design of an InGaAs/InP 1.55 μm electrically pumped VCSEL | |
| 000505 (2008) | Singlemode 1.1 μm InGaAs Quantum Well microstructured Photonic Crystal VCSEL | |
| 000518 (2008) | Polarization dependence of electroluminescence from closely-stacked and columnar quantum dots | |
| 000523 (2008) | Optical properties of GaInNAsSb/GaAs/GaAs1-xNx (x ≃ 10%) saturable absorber quantum wells | |
| 000529 (2008) | Observation of many-body Coulomb interaction effects on the photoluminescence spectra of InAs/GaAs quantum dots | |
| 000546 (2008) | Lasing spectra of 1.55 pm InAs/InP quantum dot lasers : theoretical analysis and comparison with the experiments | |
| 000561 (2008) | InAsN/GaSb/InAsN 'W' quantum well laser for mid-infrared emission : from electronic structure to threshold current density calculations | |
| 000658 (2007) | Modulated reflectivity probing of quantum dot and wetting layer states in InAs/GaInAsP/InP quantum dot laser structures | |
| 000666 (2007) | MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications | |
| 000678 (2007) | Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAs | |
| 000682 (2007) | First demonstration of a 1.52 μm RT InAs/InP(311)B laser with an active zone based on a single QD layer | |
| 000687 (2007) | Electrooptic properties of InGaAsP asymmetric double quantum wells : Enhanced slope efficiency in waveguide electroabsorption modulators | |
| 000708 (2007) | Continuous-wave operation of photonic band-edge laser at 1.55 μm on silicon wafer | |
| 000713 (2007) | Characterization of InAs quantum wires on (001)InP : Toward the realization of VCSEL structures with a stabilized polarization | |
| 000729 (2007) | All-optical tunability of InGaAsP/InP microdisk resonator by infrared light irradiation | |
| 000732 (2007) | A Monolithic MQW InP-InGaAsP-Based Optical Comb Generator | |
| 000735 (2007) | 1.55μm InP-based electrically-pumped VECSELs : comparison of buried and implanted tunnel junctions as current confinement schemes for the realization of large diameter devices | |
| 000758 (2006) | Surface-plasmon resonances in indium nitride with metal-enriched nano-particles | |
| 000768 (2006) | Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE | |
| 000790 (2006) | Optical design of InAlGaAs low-loss tunnel-junction apertures for long-wavelength vertical-cavity lasers | |
| 000820 (2006) | High-power al-free active region (λ = 852nm) laser diodes for atomic clocks and interferometry applications | |
| 000831 (2006) | Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL | |
| 000945 (2005) | Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes | |
| 000947 (2005) | InP based lasers and optical amplifiers with wire-/dot-like active regions : Self-Organized Quantum Dots | |
| 000953 (2005) | High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system | |
| 000968 (2005) | Feasibility of III-V on-silicon strain relaxed substrates | |
| 000975 (2005) | Evidence of lateral coupling in long wavelength vertically stacked InAs/GaAs(001) quantum dots | |
| 000A08 (2005) | Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection | |
| 000A18 (2005) | Analytical modeling and an experimental investigation of two-dimensional photonic crystal microlasers : defect state (microcavity) versus band-edge state (distributed feedback) structures | |
| 000A74 (2004) | Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD | |
| 000A87 (2004) | Room temperature CW lasing operation of monolithically grown 1.55 μm vertical external cavity surface emitting laser |
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