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Racine

Serveur d'exploration sur l'Indium

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Le cluster Chemical vapor deposition - Organometallic compound

Terms

86Chemical vapor deposition
67Organometallic compound
47Growth from vapor

Associations

Freq.WeightAssociation
3030Chemical vapor deposition - Organometallic compound
2727Growth from vapor - Organometallic compound
Documents par ordre de pertinence
002850 (1992) MOCVD growth of CuInSe2 : first results
002895 (1992) Ga1-xInxAs/InAsyP1-y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVD
002C40 (1989) Recent advances in III-V compounds on silicon
001C07 (1997) Spatially resolved optical of spectroscopy of GaAs islands on InAs (111)
001C59 (1997) InAsP/GaInP strained multilayers grown by MOVPE on (001), (113)B and (110) InP substrates: the role of the surface characteristics
002171 (1995) High temperature characteristics T0 and low threshold current density of 1.3μm InAsP/InGaP/InP compensated strain multiquantum well structure lasers
002251 (1994-10) Dépôt par MOCVD de couches minces de CuInSe2 pour la conversion photovoltaïque de l'énergie solaire
002269 (1994-07) Elaboration par E.P.V.O.M. d'un photodétecteur A Ga1-xInxSb et Ga1-xInxAsySb1-y pour télécommunications à plus de deux micromètres
002337 (1994) Croissance LP-MOCVD de structures transistor bipolaire à hétérojonction GaInP/GaAs
002391 (1994) LP-MOCVD grown GaInP/GaAs HBTs for VCOs and power amplifier MMICs
002608 (1993) Non-destructive approaches to interdiffusion phenomena across GaInAs/GaInAsP interfaces : photoluminescence vs. Raman
002616 (1993) Monolithic integration of 2×2 switch and optical amplifier with 0dB fibre to fibre insertion loss grown by LP-MOCVD
002663 (1993) Growth and characterization of n-type (Te) doped metal organic vapor phase epitaxy GaInSb
002730 (1993) Carbon doping of GaxIn1-xAs by atmospheric pressure organometallic vapour phase epitaxy
002743 (1993) A new organoindium precursor for electronic materials
002790 (1992) Use of high purity trimethylindium-trimethylamine adduct in MOVPE of InP
002791 (1992) Universal iron behaviour in Zn-, Cd- and Be-doped p-type InP
002849 (1992) MOVPE growth Ga0.6In0.4Sb photodiodes for 5.55 μm detection
002856 (1992) Investigations of MOCVD-grown AllnAs-InP type II heterostructures
002874 (1992) InGaSb/GaSb photodiodes growth by MOVPE
002882 (1992) Highly thermally stable, high-performance InGaAsP : InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE
002886 (1992) High power, 0.98 μm, Ga0.8As/GaAs/Ga0.51In0.49P multiple quantum well laser
002893 (1992) Growth and characterization of type-II/type-I AlGaInAs/InP interfaces
002925 (1992) Chlorine assisted selective area epitaxy in AP-MOVPE of InP : influence of CCl4 on growth and on Zn and Si incorporation
002941 (1991-02) Etude de la croissance du système GaAlInP/GaInP/GaAs par épitaxie en phase vapeur aux organométalliques pour la réalisation de lasers visibles
002961 (1991) Uniformity-optical properties of GaInP-GaAlInP layers grown by MOVPE
002A18 (1991) Improvement of the crystalline, optical and electrical quality of MOVPE GaInSb layers
002A29 (1991) Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors
002A33 (1991) Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence
002A47 (1991) Electrical and structural characterization of GaAs on InP grown by OMCVD ; application to GaAs MESFETs
002A50 (1991) Effect of metal-organic composition fluctuation on the atmospheric-pressure metal-organic vapor phase epitaxy growth of GaAlAs/GaAs and GaInAs/InP structures
002A67 (1991) Buried ridge stripe 1.5 μm GaInAsP/InP laser-waveguide integration by a simplified process
002B01 (1990) The first fabrication of n- and p-type Ga0.49In0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD
002B48 (1990) In situ investigation of the low-pressure metalorganic chemical vapor deposition of lattice-mismatched semiconductors using reflectance anisotropy measuremets
002B49 (1990) In situ investigation of InAs metalorganic chemical vapor deposition growth using reflectance anisotropy
002C21 (1989) Couches d'InP de très haute pureté obtenues par croissance en phase vapeur par la méthode des organométalliques
002C31 (1989) Substrate-driven ordering microstructure in GaxIn1-xP alloys
002C39 (1989) Si incorporation in InP using a disilane source in metalorganic vapour phase epitaxy at atmospheric pressure
002C58 (1989) Low-pressure metalorganic chemical vapor deposition growth and characterization of δ-doped InP
002D25 (1988) Very low threshold operation of 1.52 μm GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD
002D26 (1988) Very high purity InP epilayer grown by metalorganic chemical vapor deposition
002D62 (1988) Optical studies of misfit strain effects in GaxIn1-x P epitaxial layers on (001) GaAs substrates
002D91 (1988) High-quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low-pressure metalorganic chemical vapor deposition
002D94 (1988) Growth of GaInAsSb alloys by MOCVD and characterization of GaInAsSb/GaSb p-n photodiodes
002E21 (1988) Chemical ordering in GaxIn1-xP semiconductor alloy grown by metalorganic vapor phase epitaxy
002E34 (1987) Dépôts en couches épaisses de InGaP en InGaAlP sur GaAs ; étude des hétérostructures ; étude du dopage
002E62 (1987) Very low-loss GalnAs/InP optical waveguides for the 10•6μm wavelength
002F50 (1987) CW phase-locked array Ga0.25In0.75As0.5P0.5-Inp high power semiconductor laser grown by low-pressure metalorganic chemical vapor deposition
002F82 (1986) The growth and characterization of device quality InP/Ga1-xInxAsyP1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium
003023 (1986) Ga1-xInxAs-InP abrupt heterostructures grown by MOVPE AT ATMOSPHERIC PRESSURE
003073 (1985) InGaAs photodiodes prepared by low-pressure MOCVD
003092 (1984) cw operation of 1.57-μm GaxIn1-xAsyP1-yInP distributed feedback lasers grown by low-pressure metalorganic chemical vapor deposition
003107 (1984) Metalorganic InP and InxGa1-xAsyP1-y on InP epitaxy at atmospheric pressure
003122 (1984) CW operation of GaInAsP buried ridge structure laser at 1.5 μm grown by LP-MOCVD
000143 (2012) 480-GHz fmax in InP/GaAsSb/InP DHBT With New Base Isolation μ-Airbridge Design
000306 (2010) Influence of anode roughness and buffer layer nature on organic solar cells performance
000730 (2007) AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
000861 (2006) Admittance spectroscopy of cadmium free GIGS solar cells heterointerfaces
000A19 (2005) Alumina-rich spinel : A new substrate for the growth of high quality GaN-based light-emitting diodes
000B29 (2004) Large-area Cd-free CIGS solar modules with In2S3buffer layer deposited by ALCVD
000D57 (2003) High-efficiency copper indium gallium diselenide (CIGS) solar cells with indium sulfide buffer layers deposited by atomic layer chemical vapor deposition (ALCVD)
000D96 (2003) Cd-free Cu(In, Ga)Se2 thin-film solar modules with In2S3 buffer layer by ALCVD
000F61 (2002) Nitride-based long-wavelength lasers on GaAs substrates
001016 (2002) Fabrication and study of photovoltaic material CuInxGa1-xSe2 bulk and thin films obtained by the technique of close-spaced vapor transport
001438 (2000) Improved bias-thermal-stress method for the insulator charge measurement of BN/InP MIS structures
001621 (1999) Transistors et circuits intégrés à hétérostructures (III-V)
001868 (1998-05) Dépôts de films minces SiNx assistés par plasma de haute densité. Etudes corrélées de la phase gazeuse, de l'interface SiNx/InP et de la passivation du transistor bipolaire à hétérojonction InP
001A56 (1997-12) MISE EN OEUVRE DE DIFFERENTS PROCESSUS DE DEPOTS MOCVD POUR LA CROISSANCE DU MATERIAU PHOTOVOLTAIQUE CUINSE2
001B09 (1997-07) CONTRIBUTION A L'AMELIORATION DE METHODES DE CARACTERISATIONS ELECTRIQUES DE STRUCTURES MIS (Au/BN/InP) ET MOS
001B24 (1997-06) Passivation des semi-conducteurs III-V à base d'InP avec un procédé intégré incluant un plasma DECR d'ammoniac et un dépôt photochimique de nitrure de silicium
001C82 (1997) Electrical characteristics of (n)-InP MIS diodes with a POxNy interfacial layer deposited at low temperature
001E92 (1996) Photodetection at 3.65 μm in the atmospheric window using InAs0.91Sb0.09/GaAs heteroepitaxy
002061 (1995-04) Caractérisation électrique et optique de couches de GaAs hétéroépitaxiées sur InP et analyse des dispositifs MESFETs fabriqués sur ces couches
002146 (1995) Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion
002207 (1995) Butt-jointed DBR laser with 15 nm tunability grown in three MOVPE steps
002209 (1995) Atmospheric pressure MOVPE growth of high performance polarisation insensitive strain compensated MQW InGaAsP/InGaAs optical amplifier
002319 (1994-01-31) Epitaxial growth of cadmium sulfide layers on indium phosphide from aqueous ammonia solutions
002340 (1994) Very simple approach for high performance DFB laser-electroabsorption modulator monolithic integration
002366 (1994) Plasma enhanced chemical vapour deposition of boron nitride onto InP
002372 (1994) On the interface state distribution of BN on InP structures
002385 (1994) Low temperature silicon nitride deposition by direct photolysis using high power krypton flash lamps
002454 (1994) (NH4)2Sx passivation treatment and UVCVD stabilisation for GaInP/GaAs heterojunction bipolar transistors
002490 (1993-06) Contribution à l'étude par épitaxie en phase vapeur aux organométalliques de matériaux (Al)GaInAs(P) sur InP pour composants opto et microélectroniques dans un réacteur multi-plaques expérimental
002516 (1993) Dépôt de nitrure de bore par PECVD pour son utilisation comme isolant de grille dans les structures MISFET sur InP
002526 (1993) UVCVD dielectric films for InP-based optoelectronic devices
002558 (1993) Silicon oxide deposited of N2O and SIH4 at 185 nm on sulfur-treated InP: application to InP MISFETs
002592 (1993) Optical studies of InP/InAlAs/InP interface recombinations
002617 (1993) Monolayer scale study of segregation effects in InAs/GaAs heterostructures
002639 (1993) Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence
002645 (1993) Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBE
002648 (1993) Indium doping of (001), (111) and (211) CdTe layers grown by molecular beam epitaxy
002650 (1993) InGaAs/InP strained layer quantum wells grown by molecular beam epitaxy
002668 (1993) Gas source molecular beam epitaxy of alternated tensile/compressive strained GaInAsP multiple quantum wells emitting at 1.5 μm
002679 (1993) Evidence for non-uniform interface thickness in strained InGaAs/InP quantum wells
002691 (1993) Electrical properties of P-rich InP grown by gas source MBE
002708 (1993) Determination of oxygen and carbon contaminations in InGaAs molecular beam epitaxy using growth interruptions
002725 (1993) Chemical beam epitaxy of Ga0.5In0.5P using tertiarybutylphosphine
002731 (1993) Bulk and surface properties of RTCVD Si3N4 films for optical device applications
002749 (1993) 3dB coupler-balanced pin pair JFET circuit integrated on InP for coherent detection
002752 (1993) 1.55 μm buried ridge stripe laser diodes grown by gas source molecular beam epitaxy
Wicri

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