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Serveur d'exploration sur l'Indium

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Le cluster Experiments - Semiconducting indium phosphide

Terms

99Experiments
84Semiconducting indium phosphide
82Theory
37Semiconducting indium compounds

Associations

Freq.WeightAssociation
5252Experiments - Semiconducting indium phosphide
4545Semiconducting indium phosphide - Theory
3838Experiments - Theory
2828Experiments - Semiconducting indium compounds
Documents par ordre de pertinence
001704 (1999) MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP
001E72 (1996) Structural aspects of the growth of InAs islands on InP substrate
000B03 (2004) Optimization of InP-InGaAs HPT gain: Design of an opto-microwave monolithic amplifier
000B75 (2004) Characterization and fabrication of InGaAsP/InP deep-etched micro-waveguides
000C72 (2003) Very low threshold vertical emitting laser operation in InP graphite photonic crystal slab on silicon
000D36 (2003) Measurement of base and collector transit times in thin-base InGaAs/InP HBT
000D52 (2003) InAs/AlSb quantum cascade lasers operating at 6.7 μm
000E01 (2003) Band structure and optical gain in InGaAsN/GaAs and InGaAsN/GaAsN quantum wells
000F52 (2002) Optical packet switching with lossless 16-channel InP monolithically integrated wavelength selector module
001004 (2002) High temperature 10 Gbit/s directly modulated 1.3 μm DFB lasers using InAsP/InGaAsP materials
001054 (2002) 48 Gbit/s InP DHBT MS-DFF with very low time jitter
001056 (2002) 2.5-Gb/s transmission characteristics of 1.3-μm DFB lasers with external optical feedback
001219 (2001) Integrated laser Mach-Zehnder modulator on indium phosphide free of modulated-feedback
001237 (2001) Highly NO2 sensitive pseudo Schottky barrier diodes on p-type InP with improved electrical characteristics
001281 (2001) Air quality evaluation by monolithic InP-based resistive sensors
001392 (2000) Simultaneously regenerated 4×40 Gbit/s dense WDM transmission over 10,000 km using single 40 GHz InP Mach-Zehnder modulator
001413 (2000) Optical switching of resonant interband tunnelling diodes induced by heavy hole space charge effects
001784 (1999) 10-wavelength 200-GHz channel spacing emitter integrating DBR lasers with a PHASAR on InP for WDM applications
001969 (1998) New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFET's
001994 (1998) Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications
001A04 (1998) GaAlAs/GaAs metamorphic Bragg mirror for long wavelength VCSELs
001A18 (1998) Dynamic and transverse mode properties of photopumped monolithic InGaAlAs vertical cavity surface emitting laser at 1.55 μm
001B92 (1997) Theoretical study of p-i-n photodetectors' power limitations from 2.5 to 60 GHz
001C44 (1997) Lossless InAsP-InGaP modulator at 1.3 μm for optical conversion of radio signals up to 40 GHz
001C58 (1997) InGaP/InAsP MQW complex-coupled DFB taperless laser with large spot size and high coupling efficiency
001C66 (1997) High power saturation, polarization insensitive electroabsorption modulator with spiked shallow wells
001C67 (1997) High power operation of widely tunable 1.55μm distributed Bragg reflecto laser
001C95 (1997) Comparison of the propagation performance over standard dispersive fiber between InP-based &pgr;-phase-shifted and symmetrical Mach-Zehnder modulators
001E78 (1996) Short period superlattices under hydrostatic pressure
001F09 (1996) Low frequency noise sources in InAlAs/InGaAs MODFET's
001F10 (1996) Low excess noise of InAlAs/InP HFETs fabricated using selective dry recess etching
001F16 (1996) Investigation of low power all-optical bistability in an InGaAs-InAlAs superlattice
001F32 (1996) High performance InP-based heterostructure barrier varactors in single and stack configuration
001F84 (1996) 1.31-1.55-μm phased-array demultiplexer on InP
000A86 (2004) Room-temperature continuous-wave laser operation of electrically-pumped 1.55 μm VECSEL
000B11 (2004) Multi-layer microstrip antennas on quartz substrates: Technological considerations and performances at 60 GHz
000B22 (2004) Low-loss InGaAsP/InP submicron optical waveguides fabricated by ICP etching
000B78 (2004) Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates
000D04 (2003) Regeneration capabilities of passive saturable absorber-based optical 2R in 20Gbit/s RZ DWDM long-haul transmissions
000D59 (2003) High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects
000E11 (2003) 60-GHz High Power Performance In0.35Al0.65As-In 0.35Ga 0.65As Metamorphic HEMTs on GaAs
000E91 (2002) fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga 0.47As HEMTs on GaAs substrate
000F64 (2002) Mux-driver-EAM in single module - a solution for ultra-high bit rate applications
000F88 (2002) Lightwave single sideband wavelength self-tunable filter using an InP:Fe crystal for fiber-wireless systems
001011 (2002) Gas sensing properties of pseudo-Schottky diodes on p-type indium phosphide substrates - Application to O3 and NO2 monitoring in urban ambient air
001025 (2002) Electrodeposition of epitaxial ZnSe films on InP and GaAs from an aqueous zinc sulfate-selenosulfate solution
001032 (2002) DC-92 GHz ultra-broadband high gain InP HEMT amplifier with 410 GHz gain-bandwidth product
001055 (2002) 40 Gbit/s master-slave D-type flip-flop in InP DHBT technology
001057 (2002) 0.12 μm transferred-substrate In0.52Al0.48As/In0.53Ga 0.47As HEMTs on silicon wafer
001179 (2001) Phase-locking of an InP/InGaP/InGaAs resonant tunneling diode relaxation oscillator by direct optical injection
001207 (2001) MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55μm VCSELs
001216 (2001) Introduction of InP high speed electronics into optical fiber transmission systems and current technological limits
001229 (2001) InP 2D photonic crystal microlasers on silicon wafer: Room temperature operation at 1.55 μm
001232 (2001) InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits
001251 (2001) Enhancement-mode Al0.66In0.34As/Ga0.67In0.33As metamorphic HEMT: Modeling and measurements
001287 (2001) A 0.15-μm 60-Ghz high-power composite channel GaInAs/InP HEMT with low gate current
001411 (2000) Output conductance dispersion and drain current transients in InP-HFETs: Observations and equivalent circuit model
001425 (2000) Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors
001431 (2000) Indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: A new structure parameter
001435 (2000) InAs/InAs(P,Sb) quantum-well laser structure for the midwavelength infrared region
001448 (2000) Fabrication and performance of InP-based heterostructure barrier varactors in a 250-GHz waveguide tripler
001464 (2000) Displacement damage effects in InGaAs detectors: Experimental results and semi-empirical model prediction
001467 (2000) Dense WDM (0.27/bit/s/Hz) 4×40 Gbit/s dispersion-managed transmission over 10 000 km with in-line optical regeneration by channel pairs
001473 (2000) Complex current gain and cutoff frequency determination of HBTs
001491 (2000) 2×40 Gbit/s WDM optically regenerated dispersion-managed transmission over 10000 km with narrow channel spacing
001493 (2000) 0.7W in singlemode fibre from 1.48μm semiconductor unstable-cavity laser with low-confinement asymmetric epilayer structure
001633 (1999) Tunable filter with box-like spectral response for 1.28/1.32 μm duplexer application
001634 (1999) Triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications
001636 (1999) Transferred InP-based HBVs on glass substrate
001664 (1999) Smart-Cut process using metallic bonding: Application to transfer of Si, GaAs, InP thin films
001670 (1999) Room temperature laser operation of bulk InGaAsN/GaAs structures grown by AP-MOVPE using N2 as carrier gas
001673 (1999) Record performance of a 250 GHz InP-based heterostructure barrier varactor tripler
001695 (1999) NO2 detection by a resistive device based on n-InP epitaxial layers
001727 (1999) High-performance collector-up InGaP/GaAs heterojunction bipolar transistor with Schottky contact
001785 (1999) 1-m W CW-RT monolithic VCSEL at 1.55 μm
001786 (1999) 0.1μm Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances
001789 (1999) +55 °C Pulse lasing at 1.56 μm of all-monolithic InGaAlAs/InP vertical cavity lasers
001917 (1998) Theoretical analysis of kink effect in C-V characteristics of indium-implanted NMOS capacitors
001934 (1998) Step-like heterostructure barrier varactor
001938 (1998) Significant reduction of propagation losses in InGaAsP-InP buried-stripe waveguides by hydrogenation
001940 (1998) Room-temperature continuous-wave operation VCSEL at 1.48 μm with Sb-based Bragg reflector
001943 (1998) Reduced timing jitter of two-section 1.55-μm laser diodes under gain-/loss-switching regime at multigigahertz rates
001950 (1998) Polarization-independent InP push-pull Mach-Zehnder modulator for 20 Gbit/s soliton regeneration
001995 (1998) Highly selective 1.55 μm InP/air gap micromachined Fabry-Perot filter for optical communications
001997 (1998) High power added efficiency at 35GHz on InP DH HEMTs
001999 (1998) High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors
001A05 (1998) Four-channel wavelength selector monolithically integrated on InP
001A25 (1998) Capacitance engineering for InP-based heterostructure barrier varactor
001B81 (1997) Very high-frequency small-signal equivalent circuit for short gate-length InP HEMT's
001C14 (1997) Room-temperature pulsed operation of 1.3 μm vertical-cavity lasers including bottom InGaAsP/InP multilayer Bragg mirrors
001C19 (1997) Procedure to minimize interface-state errors in MIS doping profile determinations
001C22 (1997) Planar InGaP/GaAs HBTs for high speed optoelectronic circuit applications
001C35 (1997) Monolithic vertical cavity device lasing at 1.55μm in InGaAlAs system
001C36 (1997) Molecular beam epitaxy growth of 1.3 μm high-reflectivity AlGaAsSb/AlAsSb Bragg mirror
001C56 (1997) InP/GaInAsP &pgr;-phase-shifted Mach-Zehnder modulator for wavelength independent (1530-1560 nm) propagation performance at 10 Gbit/s over standard dispersive fibre
001C63 (1997) Improved high frequency C-V method for interface state analysis on MIS structures
001D07 (1997) Base-collector leakage currents in InP/InGaAs double heterojunction bipolar transistors
001D20 (1997) 20-Gb/s integrated DBR laser-EA modulator by selective area growth for 1.55-μm WDM applications
001E68 (1996) Submilliwatt optical bistability in wafer fused vertical cavity at 1.55-μm wavelength
001E98 (1996) Observation of giant birefringence and dichroism in InP-AlInAs type II superlattices
Wicri

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