| 001A47 (1997-12-15) |
| Photoluminescence energy and interface chemistry of GaInP/GaAs quantum wells |
| 000C16 (2003-09-01) |
| Molecular-beam epitaxial growth and characterization of quaternary III-nitride compounds |
| 000C46 (2003-04-07) |
| In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy |
| 000C53 (2003-03-10) |
| Determination of built-in electric fields in quaternary InAlGaN heterostructures |
| 000C65 (2003-01-01) |
| Conduction band offset in the AlxGayIn1-x-yP/Ga0.52In0.48P system as studied by luminescence spectroscopy |
| 000E48 (2002-07-01) |
| Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001) |
| 000E82 (2002-01-21) |
| Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes |
| 001078 (2001-09-15) |
| Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures |
| 001114 (2001-03-12) |
| Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes |
| 001808 (1998-11-01) |
| Application of photoreflectance spectroscopy to the study of interface roughness in InGaAs/InAlAs heterointerfaces |
| 001828 (1998-10) |
| Theoretical and experimental study of spatial resolution in quantum-well spatial light modulators |
| 001855 (1998-07) |
| Surface roughness, strain, and alloy segregation in lattice-matched heteroepitaxy |
| 000A25 (2004-06-01) |
| Conductance quantization in deep mesa-etched gate-controlled ballistic electron waveguides |
| 000A46 (2004-02-02) |
| Single photon emission from site-controlled pyramidal quantum dots |
| 000C13 (2003-10-15) |
| Electrical characterization of InGaN/GaN light emitting diodes grown by molecular beam epitaxy |
| 000C26 (2003-08-15) |
| Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy |
| 000C29 (2003-07-15) |
| Enhanced photoconductive signal in InAs quantum dots due to plasma confined microcavities |
| 000C30 (2003-07-15) |
| Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems |
| 000C51 (2003-03-24) |
| GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm |
| 000C58 (2003-02-15) |
| Theoretical study of radiation effects on GaAs/AlGaAs and InGaAsP/InP quantum-well lasers |
| 000C61 (2003-02-01) |
| Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy |
| 000E21 (2002-11-15) |
| Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields |
| 000E26 (2002-11-01) |
| Monte Carlo simulation of electron transport in narrow gap heterostructures |
| 000E59 (2002-06-01) |
| Photoluminescence study of interfaces between heavily doped Al0.48In0.52As:Si layers and InP (Fe) substrates |
| 000E60 (2002-06-01) |
| Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers |
| 000E66 (2002-05) |
| Structural and transport characterization of AlSb/InAs quantum-well structures grown by molecular-beam epitaxy with two growth interruptions |
| 001076 (2001-09-17) |
| Structural effects of the thermal treatment on a GaInNAs/GaAs superlattice |
| 001101 (2001-05-07) |
| Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP (001) by gas-source molecular-beam epitaxy |
| 001111 (2001-03-15) |
| Mini-stopbands of a one-dimensional system: The channel waveguide in a two-dimensional photonic crystal |
| 001310 (2000-10-15) |
| Thermally detected optical absorption, reflectance, and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy |
| 001324 (2000-08-28) |
| InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K |
| 001326 (2000-08-01) |
| Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck-Shockley relation |
| 001330 (2000-07-10) |
| Interplay between segregation, roughness, and local strains in the growth of Ga0.75In0.25P alloy |
| 001339 (2000-04-10) |
| Composition effect on the growth mode, strain relaxation, and critical thickness of tensile Ga1-xInxP layers |
| 001340 (2000-03-20) |
| Self-assembled InGaN quantum dots grown by molecular-beam epitaxy |
| 001499 (1999-12-13) |
| Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth |
| 001512 (1999-11-29) |
| Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations |
| 001522 (1999-10-25) |
| Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN |
| 001549 (1999-07-12) |
| High-quality highly strained InGaAs quantum wells grown on InP using (InAs)n(GaAs)0.25 fractional monolayer superlattices |
| 001563 (1999-06-14) |
| GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy |
| 001568 (1999-05-31) |
| Wavelength tuning of InAs quantum dots grown on (311)B InP |
| 001586 (1999-03-22) |
| Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113)B substrate |
| 001591 (1999-02-15) |
| Indium segregation effects in (111)B-grown (In,Ga)As/GaAs piezoelectric quantum wells |
| 001593 (1999-02-01) |
| Spontaneous emission from InAs/GaSb quantum wells grown by molecular beam epitaxy |
| 001820 (1998-10-15) |
| Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP |
| 001837 (1998-08-15) |
| X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs |
| 001839 (1998-08-10) |
| Design and simulation of low-threshold antimonide intersubband lasers |
| 001880 (1998-03-02) |
| Real time control of InxGa1-xN molecular beam epitaxy growth |
| 001A72 (1997-10-15) |
| Role of surface energy and surface reconstructions on the 2D-to-3D growth-mode transition of strained InxGa1-xAs layers on InP(001) |
| 001A87 (1997-09-15) |
| Mechanical relaxation of strained semiconducting stripes: Influence on optoelectronic properties |
| 001B31 (1997-05-05) |
| Structural study of InAs quantum boxes grown by molecular beam epitaxy on a (001) GaAs-on-Si substrate |
| 001B43 (1997-03-15) |
| Optically detected oscillations of screening by a two-dimensional electron gas in a magnetic field |
| 001B50 (1997-01-15) |
| Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells |
| 000A23 (2004-06-15) |
| Measurements of optical losses in mid-infrared semiconductor lasers using Fabry-Perot transmission oscillations |
| 000A27 (2004-05-24) |
| Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates |
| 000A31 (2004-05-03) |
| Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb-GaInAs/GaAs bilayer quantum wells |
| 000A32 (2004-05-01) |
| From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001) |
| 000A37 (2004-04-05) |
| Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells |
| 000A40 (2004-03-29) |
| High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability |
| 000C05 (2003-12-15) |
| Acoustic phonon sidebands in the emission line of single InAs/GaAs quantum dots |
| 000C06 (2003-12-08) |
| Raman study of the A1(LO) phonon in relaxed and pseudomorphic InGaN epilayers |
| 000C14 (2003-10-06) |
| Indium nitride quantum dots grown by metalorganic vapor phase epitaxy |
| 000C19 (2003-08-18) |
| Influence of carrier localization on modulation mechanism in photoreflectance of GaAsN and GaInAsN |
| 000C23 (2003-08-15) |
| Nonlinear absorption temporal dynamics of Fe-doped GaInAs/InP multiple quantum wells |
| 000C25 (2003-08-15) |
| Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy |
| 000C35 (2003-06-15) |
| Kinetics of highly spin-polarized electron photoemission from an InGaAlAs strained layer by energy and spin-resolved measurements |
| 000C37 (2003-05-19) |
| Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells |
| 000C38 (2003-05-15) |
| Dynamic saturation of an intersublevel transition in self-organized InAs/InxAl1-xAs quantum dots |
| 000C41 (2003-05-01) |
| Analysis of multijunction solar cell degradation in space and irradiation induced recombination centers |
| 000C43 (2003-04-15) |
| Implementation of an all-electron GW approximation based on the projector augmented wave method without plasmon pole approximation: Application to Si, SiC, AlAs, InAs, NaH, and KH |
| 000C47 (2003-04-01) |
| Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy |
| 000C54 (2003-03-01) |
| In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells |
| 000E19 (2002-11-18) |
| Continuous Absorption Background and Decoherence in Quantum Dots |
| 000E20 (2002-11-15) |
| Transmission electron microscopy study of the InP/InGaAs and InGaAs/InP heterointerfaces grown by metalorganic vapor-phase epitaxy |
| 000E27 (2002-10-28) |
| Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures |
| 000E29 (2002-10-15) |
| Quantum wires in multidimensional microcavities: Effects of photon dimensionality on emission properties |
| 000E36 (2002-09-01) |
| Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer |
| 000E37 (2002-08-26) |
| Widely tunable light-emitting diodes by Stark effect in forward bias |
| 000E52 (2002-06-15) |
| Photoluminescence quenching of a low-pressure metal-organic vapor-phase-epitaxy grown quantum dots array with bimodal inhomogeneous broadening |
| 000E55 (2002-06-15) |
| Free-to-bound and interband recombination in the photoluminescence of a dense two-dimensional electron gas |
| 000E63 (2002-05-15) |
| Electronic structure of the GaSe/Si(111) and InSe/Si(111) heterojunctions |
| 000E68 (2002-04-15) |
| Interpretation and theory of tunneling experiments on single nanostructures |
| 000E70 (2002-04-08) |
| Excitonic Polarons in Semiconductor Quantum Dots |
| 000E72 (2002-03-15) |
| Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots |
| 000E74 (2002-03-15) |
| Electronic structure of the layer compounds GaSe and InSe in a tight-binding approach |
| 000E78 (2002-02-15) |
| Far-infrared magnetospectroscopy of polaron states in self-assembled InAs/GaAs quantum dots |
| 001006 (2002) |
| High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes |
| 001059 (2001-12-01) |
| Stacking of metamorphic InAlAs/InGaAs heterostructures on GaAs substrate |
| 001061 (2001-11-15) |
| Experimental and theoretical investigation of interband and intersubband transitions in type-II InAs/AlSb superlattices |
| 001069 (2001-10-22) |
| Wide-range-tunable laterally coupled distributed feedback lasers based on InGaAsP-InP |
| 001070 (2001-10-22) |
| Comparison of light- and heavy-ion-irradiated quantum-wells for use as ultrafast saturable absorbers |
| 001073 (2001-10-01) |
| Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots |
| 001079 (2001-09-10) |
| Incorporation kinetics of indium in indium gallium nitride at low temperature |
| 001082 (2001-08-15) |
| Polaron coupling in quantum dot molecules |
| 001085 (2001-07-15) |
| Green InGaN Light-Emitting Diodes Grown on Silicon (111) by Metalorganic Vapor Phase Epitaxy |
| 001092 (2001-07) |
| Growth and characterization of GaInNAs/GaAs multiquantum wells |
| 001095 (2001-06-15) |
| Luttinger-like parameter calculations |
| 001096 (2001-06-01) |
| Quantum calculations of conduction properties of metal/InAlAs/InGaAs heterostructures |
| 001108 (2001-04-01) |
| Investigation of the P-As substitution at GaAs/Ga0.51In0.49P interfaces by photoluminescence under pressure |
| 001109 (2001-03-19) |
| Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm |
