| 000006 (2013) |
| Wetting Layer: The Key Player in Plasma-Assisted Silicon Nanowire Growth Mediated by Tin |
| 000051 (2013) |
| InP1-xAsx quantum dots in InP nanowires: A route for single photon emitters |
| 000068 (2013) |
| Controlled Modulation of Diameter and Composition along Individual III-V Nitride Nanowires |
| 000111 (2012) |
| Morphology control and growth dynamics of in-plane solid-liquid-solid silicon nanowires |
| 000113 (2012) |
| Morphological and structural properties of InP/Gd203 nanowires grown by molecular beam epitaxy on silicon substrate |
| 000120 (2012) |
| InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates |
| 000127 (2012) |
| Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon |
| 000172 (2011) |
| Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth |
| 000310 (2010) |
| Hydrothermal treatment for the marked structural and optical quality improvement of ZnO nanowire arrays deposited on lightweight flexible substrates |
| 000564 (2008) |
| In situ generation of indium catalysts to grow crystalline silicon nanowires at low temperature on ITO |
| 000032 (2013) |
| Persistent enhancement of the carrier density in electron irradiated InAs nanowires |
| 000039 (2013) |
| Nanowire-based field effect transistors for terahertz detection and imaging systems : TERAHERTZ NANOTECHNOLOGY |
| 000054 (2013) |
| High frequency top-down junction-less silicon nanowire resonators |
| 000057 (2013) |
| Flexible transparent conductive materials based on silver nanowire networks: a review |
| 000059 (2013) |
| Fabrication and characterization of a δ-dope InAs/InP core shell nanowire transistor |
| 000060 (2013) |
| Excitonic properties of wurtzite InP nanowires grown on silicon substrate |
| 000092 (2012) |
| Supercurrent and Multiple Andreev Reflections in an InSb Nanowire Josephson Junction |
| 000099 (2012) |
| Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors |
| 000102 (2012) |
| Probing Quantum Confinement within Single Core-Multishell Nanowires |
| 000106 (2012) |
| Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires |
| 000140 (2012) |
| Anomalous Zero-Bias Conductance Peak in a Nb-InSb Nanowire-Nb Hybrid Device |
| 000146 (2011) |
| Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires |
| 000147 (2011) |
| Tuning the structural properties of InAs nanocrystals grown by molecular beam epitaxy on silicon dioxide |
| 000174 (2011) |
| Structural analysis of site-controlled InAs/InP quantum dots |
| 000177 (2011) |
| Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice |
| 000216 (2011) |
| Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 μm band for silicon photonics |
| 000217 (2011) |
| Growth and characterization of polar (0 0 0 1) and semipolar (11-22) InGaN/GaN quantum dots |
| 000220 (2011) |
| Formation of Wurtzite InP Nanowires Explained by Liquid-Ordering |
| 000231 (2011) |
| Effects of Crystal Phase Mixing on the Electrical Properties of InAs Nanowires |
| 000254 (2010) |
| Wide InP Nanowires with Wurtzite/Zincblende Superlattice Segments Are Type-II whereas Narrower Nanowires Become Type-I: An Atomistic Pseudopotential Calculation |
| 000264 (2010) |
| Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (1 0 0) GaAs substrates |
| 000317 (2010) |
| Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrate for silicon photonics |
| 000336 (2010) |
| Direct Observation of Acoustic Oscillations in InAs Nanowires |
| 000342 (2010) |
| Crystal Phase Engineering in Single InAs Nanowires |
| 000361 (2010) |
| All-in-situ fabrication and characterization of silicon nanowires on TCO/glass substrates for photovoltaic application |
| 000405 (2009) |
| Role of substrate in the surface diffusion and kinetic roughening of nanocrystallised nickel electrodeposits |
| 000460 (2009) |
| Electrical and Photoresponse Properties of an Intramolecular p-n Homojunction in Single Phosphorus-Doped ZnO Nanowires |
| 000590 (2008) |
| De-relaxation of plastically relaxed InAs/GaAs quantum dots during the growth of a GaAs encapsulation layer |
| 000603 (2008) |
| Andreev Reflection versus Coulomb Blockade in Hybrid Semiconductor Nanowire Devices |
| 000629 (2007) |
| Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence x-ray techniques |
| 000676 (2007) |
| High-density InSb-based quantum dots emitting in the mid-infrared |
| 000677 (2007) |
| High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates |
| 000678 (2007) |
| Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAs |
| 000679 (2007) |
| Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE |
| 000692 (2007) |
| Effects of a shell on the electronic properties of nanowire superlattices |
| 000768 (2006) |
| Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE |
| 000A74 (2004) |
| Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD |
| 000003 (2014) |
| Effects of indium concentration on the properties of In-doped ZnO films: Applications to silicon wafer solar cells |
| 000010 (2013) |
| Triggered Indistinguishable Single Photons with Narrow Line Widths from Site-Controlled Quantum Dots |
| 000020 (2013) |
| Structural characterization of selectively grown multilayers with new high angular resolution and sub-millimeter spot-size x-ray diffractometer |
| 000023 (2013) |
| Spatial modulation of above-the-gap cathodoluminescence in InP nanowires |
| 000024 (2013) |
| Sn-catalyzed silicon nanowire solar cells with 4.9% efficiency grown on glass |
| 000025 (2013) |
| Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE |
| 000034 (2013) |
| Optimisation of the physical properties of InAs/InGaAs/GaAs QDs heterostructures embedded p-i-n GaAs solar cell |
| 000041 (2013) |
| Modification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO2:Er doped with Si-nanoclusters |
| 000047 (2013) |
| Investigation of copper indium gallium selenide material growth by selenization of metallic precursors |
| 000078 (2013) |
| (112) and (220)/(204)-oriented CuInSe2 thin films grown by co-evaporation under vacuum |
| 000082 (2012) |
| Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN : Indium Nitride and Related Alloys |
| 000109 (2012) |
| Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters |
| 000126 (2012) |
| Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes |
| 000142 (2012) |
| A gradual annealing of amorphous sputtered indium tin oxide: Crystalline structure and electrical characteristics |
| 000155 (2011) |
| The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates |
| 000175 (2011) |
| Status of p-on-n Arsenic-Implanted HgCdTe Technologies |
| 000187 (2011) |
| Oxygen deficiency in oxide films grown by PLD |
| 000194 (2011) |
| Nanostructured thin films of indium oxide nanocrystals confined in alumina matrixes |
| 000195 (2011) |
| Nanocomposite oxide thin films grown by pulsed energy beam deposition |
| 000199 (2011) |
| M-Plane Core-Shell InGaN/GaN Multiple-Quantum-Welis on GaN Wires for Electroluminescent Devices |
| 000223 (2011) |
| Experimental investigation of dewetting models |
| 000235 (2011) |
| Direct observation of elemental segregation in InGaN nanowires by X-ray nanoprobe |
| 000260 (2010) |
| The structure of InAlN/GaN heterostructures for high electron mobility transistors |
| 000273 (2010) |
| Recent advances in the MOVPE growth of indium nitride |
| 000283 (2010) |
| Phase evolution during CuInSe2 electrodeposition on polycrystalline Mo |
| 000288 (2010) |
| Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materials |
| 000305 (2010) |
| Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(1 1 1) and GaN templates by RF sputtering |
| 000316 (2010) |
| Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition |
| 000318 (2010) |
| Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy |
| 000319 (2010) |
| GaN-based nanowires: From nanometric-scale characterization to light emitting diodes |
| 000327 (2010) |
| Electrochemical and optical characterizations of anodic porous n-InP(10 0) layers |
| 000334 (2010) |
| Effects of La, Nd and Sm substitution of Sr in Sr2CrRe06 on the structural, magnetic and transport properties |
| 000346 (2010) |
| Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface |
| 000365 (2010) |
| A highly efficient single-photon source based on a quantum dot in a photonic nanowire |
| 000366 (2010) |
| 3D harnessing of light with photon cage |
| 000370 (2009) |
| X-Ray Diffraction as a Local Probe Tool |
| 000409 (2009) |
| Planar p-on-n HgCdTe FPAs by Arsenic Ion Implantation |
| 000410 (2009) |
| Photoinduced nonlinear optical effects in the Pr doped BiB306 glass nanoparticles incorporated into the polymer matrices |
| 000417 (2009) |
| Monolithic integration of InP-based transistors on Si substrates using MBE |
| 000421 (2009) |
| MOVPE growth of InN buffer layers on sapphire |
| 000422 (2009) |
| MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones |
| 000423 (2009) |
| Low-temperature growth of nano-structured silicon thin films on ITO initiated by metal catalysts |
| 000430 (2009) |
| Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy |
| 000434 (2009) |
| Influence of the surface reconstruction on the growth of InP on SrTiO3(0 01) |
| 000448 (2009) |
| HgCdTe p-on-n Focal-Plane Array Fabrication Using Arsenic Incorporation During MBE Growth |
| 000450 (2009) |
| Growth study of thin indium nitride layers on InP (10 0) by Auger electron spectroscopy and photoluminescence |
| 000452 (2009) |
| Growth of InN films and nanostructures by MOVPE |
| 000457 (2009) |
| Er3+-doped Nanoparticles for Optical Detection of Magnetic Field |
| 000466 (2009) |
| Crystal growth and characterization of two-leg spin ladder compounds: Sr14Cu24O41 and Sr2Ca12CU24O41 |
| 000467 (2009) |
| Critical thickness for InAs quantum dot formation on (311)B InP substrates |
| 000474 (2009) |
| Alternative precursors for MOVPE growth of InN and GaN at low temperature |
| 000481 (2008) |
| n-type phosphorus-doped polycrystalline diamond on silicon substrates |
| 000506 (2008) |
| Single crystal CVD diamond growth strategy by the use of a 3D geometrical model : Growth on (113) oriented substrates |
