Serveur d'exploration sur l'Indium

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Le cluster Indium phosphide - Gallium phosphide

Terms

175Indium phosphide
37Gallium phosphide
56Heterojunction bipolar transistors

Associations

Freq.WeightAssociation
3030Gallium phosphide - Indium phosphide
2424Heterojunction bipolar transistors - Indium phosphide

Documents par ordre de pertinence
000272 (2010) Reliability of high voltage/high power L/S-band Hbt technology
000604 (2008) An analytic procedure for extraction of metallic collector-up InP/InGaAsP/InGaAs HBT small signal equivalent circuit parameters
000791 (2006) On the simulation of low-frequency noise upconversion in InGaP/GaAs HBTs
001028 (2002) Effect of leakage current induced by B+H+ implantation in the isolation process for self passivated GaAlAs/GaInP/GaAs HBT
001236 (2001) Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability
001424 (2000) Low tensile strain GaInAs : uid/GaAs : C superlattice heterostructures grown by LP MOCVD : application to GaInP/GaAs heterojunction bipolar transistor base layer
001554 (1999-07) Contribution à l'étude physique et à l'optimisation des phototransistors bipolaires à hétérojonction à l'aide d'outils de simulation numérique : Application au développement d'un schéma équivalent grand signal du phototransistor
000000 (2014) Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency
000019 (2013) Submicrometer InP/InGaAs DHBT Architecture Enhancements Targeting Reliability Improvements
000027 (2013) Procedure to derive analytical models for microwave noise performances of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors
000035 (2013) Numerical simulation and characterization of trapping noise in InGaP-GaAs heterojunctions devices at high injection
000076 (2013) 70 GSa/s and 51 GHz bandwidth track-and-hold amplifier in InP DHBT process
000143 (2012) 480-GHz fmax in InP/GaAsSb/InP DHBT With New Base Isolation μ-Airbridge Design
000148 (2011) Trends in Submicrometer InP-Based HBT Architecture Targeting Thermal Management
000179 (2011) Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses
000204 (2011) Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design
000211 (2011) Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models
000258 (2010) Thermal aging model of InP/InGaAs/InP DHBT
000269 (2010) Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base
000277 (2010) Preliminary results of storage accelerated aging test on InP/InGaAs DHBT
000355 (2010) Band structure at heterojunction interfaces of GaInP solar cells
000394 (2009) Strained InGaAsP multi-quantum-well structures for InP-based wide linewidth and polarization-insensitive semiconductor optical amplifiers
000417 (2009) Monolithic integration of InP-based transistors on Si substrates using MBE
000437 (2009) InP DHBT selector-driver with 2 × 2.7 V swing for 100 Gbit/s operation
000489 (2008) Theoretical and numerical investigations of carriers transport in N-semi-insulating-N and P-semi-insulating-P diodes : A new approach
000532 (2008) New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements
000732 (2007) A Monolithic MQW InP-InGaAsP-Based Optical Comb Generator
000798 (2006) Modelling and simulation of InGaP solar cells under solar concentration : Series resistance measurement and prediction
000870 (2005) Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor
000923 (2005) Non-empirical prediction of solar cell degradation in space
000A09 (2005) Comparison between carried-induced optical index, Ioss variations and carrier lifetime in GaInAsP/InP heterostructures for 1.55 μm DOS application
000A10 (2005) Comments on: Microwave noise modeling for InP-InGaAs HBTs. Authors' reply
000A14 (2005) As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system
000D33 (2003) Metastability effects in InGaP solar cells
000E86 (2002) Transistors Bipolaires à hétérojonction sur substrat GaAs : Résultats de fiabilité et circuits intégrés monolithiques : Croissance épitaxiale en phase vapeur aux organométalliques
000F77 (2002) Mechanism of irradiation induced degradation of solar cells
000F91 (2002) Irradiation-induced degradation in solar cell: characterization of recombination centres
000F98 (2002) InP DHBT technology and design for 40 Gbit/s full-rate-clock communication circuits
001159 (2001) Solar cell degradation by electron irradiation. Comparison between Si, GaAs and GaInP cells
001168 (2001) Radiation-induced defects in solar cell materials
001646 (1999) Surface passivation of composition graded base in GaAlAs/GalnP/GaAs heterojunction bipolar transistor
001851 (1998-07) ETUDES EXPERIMENTALES ET MODELISATION DE LA DIFFUSION DU Be DANS DES STRUCTURES EPITAXIEES III-V
001890 (1998-02) Circuits intégrés bipolaires ultra-rapides : méthodologie de conception et applications pour les transmissions optiques
001C76 (1997) Evaluation of the properties of hydrogenated InP/InGaAsP double heterostructure waveguides
002350 (1994) Strained multi-quantum well heterostructures for lasers, modulators and integrated optical devices at 1.3-1.55 μm
002359 (1994) Sensitivity to electrostatic discharges of low-cost' 1.3 μm laser diodes: a comparative study
002405 (1994) GaInP-GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposiion for voltage-controlled oscilators and power amplifier microwave monolithic integrated circuits
000005 (2014) Backgating effect in III-V MESFET's: A physical model
000008 (2013) Uniquely and arbitrarily shaped laser resonators using 2D InAsP/InP photonic crystals
000012 (2013) Towards a monolithically integrated III-V laser on silicon: optimization of multi-quantum well growth on InP on Si
000021 (2013) Stability of InP oxide versus solvated electrons in liquid ammonia
000023 (2013) Spatial modulation of above-the-gap cathodoluminescence in InP nanowires
000031 (2013) Phosphazene like film formation on InP in liquid ammonia (223 K)
000045 (2013) Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits
000051 (2013) InP1-xAsx quantum dots in InP nanowires: A route for single photon emitters
000052 (2013) InAs/AISb quantum cascade lasers operating near 20 μm
000059 (2013) Fabrication and characterization of a δ-dope InAs/InP core shell nanowire transistor
000064 (2013) Efficiency limits of laser power converters for optical power transfer applications
000069 (2013) Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes
000075 (2013) A Large-Swing 112-Gb/s Selector-Driver Based on a Differential Distributed Amplifier in InP DHBT Technology
000083 (2012) Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure
000113 (2012) Morphological and structural properties of InP/Gd203 nanowires grown by molecular beam epitaxy on silicon substrate
000120 (2012) InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
000127 (2012) Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon
000137 (2012) Comparison of InP Schottky diodes based on Au or Pd sensing electrodes for NO2 and O3 sensing
000174 (2011) Structural analysis of site-controlled InAs/InP quantum dots
000176 (2011) Sputtered hydrogenated amorphous silicon thin films for distributed Bragg reflectors and long wavelength vertical cavity surface emitting lasers applications
000200 (2011) Luminescence of Polyethylene Glycol Coated CdSeTe/ZnS and InP/ZnS Nanoparticles in the Presence of Copper Cations
000203 (2011) Investigation of the metastability behavior of CIGS based solar cells with ZnMgO-Zn (S,O,OH) window-buffer layers
000209 (2011) Influence of Ga content on defects in CuInxGa1-xSe2 based solar cell absorbers investigated by sub gap modulated photocurrent and admittance spectroscopy
000210 (2011) InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
000220 (2011) Formation of Wurtzite InP Nanowires Explained by Liquid-Ordering
000236 (2011) Direct epitaxial growth of InP based heterostructures on SrTiO3/Si(0 0 1) crystalline templates
000237 (2011) Crystallographic orientation transition of InP islands on SrTiO3 substrates with the growth temperature
000248 (2011) All-optical wavelength conversion using mode switching in InP microdisc laser
000254 (2010) Wide InP Nanowires with Wurtzite/Zincblende Superlattice Segments Are Type-II whereas Narrower Nanowires Become Type-I: An Atomistic Pseudopotential Calculation
000261 (2010) The pH response of the InP/liquid ammonia interface at 223 K: A pure nernstian behavior
000275 (2010) Pulsed laser ablation of binary semiconductors: mechanisms of vaporisation and cluster formation : PHOTONICS AND NANOTECHNOLOGY
000294 (2010) Multiple steady state current-voltage characteristics in drift-diffusion modelisation of N type and semi-insulating GaAs Gunn structures
000327 (2010) Electrochemical and optical characterizations of anodic porous n-InP(10 0) layers
000346 (2010) Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface
000350 (2010) Cathodoluminescence Study of InP Photonic Structures Fabricated by Dry Etching
000360 (2010) An ARXPS study of the passivating layer formed on III-V surface by an innovative anodic treatment in liquid ammonia
000371 (2009) Variable range hopping conductivity and negative magnetoresistance in n-type InP semiconductor
000390 (2009) Study of the passivation mechanisms of boron doped diamond using the Amplitude Modulated Step Scan Fourier Transform Photocurrent Spectroscopy
000391 (2009) Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe
000403 (2009) SEM and XPS studies of nanohole arrays on InP(1 0 0) surfaces created by coupling AAO templates and low energy Ar+ ion sputtering
000428 (2009) Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound
000430 (2009) Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy
000434 (2009) Influence of the surface reconstruction on the growth of InP on SrTiO3(0 01)
000447 (2009) Hierarchical inorganic nanopatterning (INP) through direct easy block-copolymer templating
000450 (2009) Growth study of thin indium nitride layers on InP (10 0) by Auger electron spectroscopy and photoluminescence
000467 (2009) Critical thickness for InAs quantum dot formation on (311)B InP substrates
000470 (2009) Chemically Induced Mobility Gaps in Graphene Nanoribbons: A Route for Upscaling Device Performances
000477 (2009) A comparative study of Schottky barrier height enhancement by realized pseudo-Schottky diodes on p-InP
000487 (2008) Theoretical study of highly strained InAs material from first-principles modelling : application to an ideal QD
000497 (2008) Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies
000498 (2008) Study by EELS and EPES of the stability of InPO4/InP system
000526 (2008) One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots : First step towards single-photon source applications
000537 (2008) Nanoindentation response of a thin InP membrane

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