000272 (2010) |
| Reliability of high voltage/high power L/S-band Hbt technology |
000604 (2008) |
| An analytic procedure for extraction of metallic collector-up InP/InGaAsP/InGaAs HBT small signal equivalent circuit parameters |
000791 (2006) |
| On the simulation of low-frequency noise upconversion in InGaP/GaAs HBTs |
001028 (2002) |
| Effect of leakage current induced by B+H+ implantation in the isolation process for self passivated GaAlAs/GaInP/GaAs HBT |
001236 (2001) |
| Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability |
001424 (2000) |
| Low tensile strain GaInAs : uid/GaAs : C superlattice heterostructures grown by LP MOCVD : application to GaInP/GaAs heterojunction bipolar transistor base layer |
001554 (1999-07) |
| Contribution à l'étude physique et à l'optimisation des phototransistors bipolaires à hétérojonction à l'aide d'outils de simulation numérique : Application au développement d'un schéma équivalent grand signal du phototransistor |
000000 (2014) |
| Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency |
000019 (2013) |
| Submicrometer InP/InGaAs DHBT Architecture Enhancements Targeting Reliability Improvements |
000027 (2013) |
| Procedure to derive analytical models for microwave noise performances of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors |
000035 (2013) |
| Numerical simulation and characterization of trapping noise in InGaP-GaAs heterojunctions devices at high injection |
000076 (2013) |
| 70 GSa/s and 51 GHz bandwidth track-and-hold amplifier in InP DHBT process |
000143 (2012) |
| 480-GHz fmax in InP/GaAsSb/InP DHBT With New Base Isolation μ-Airbridge Design |
000148 (2011) |
| Trends in Submicrometer InP-Based HBT Architecture Targeting Thermal Management |
000179 (2011) |
| Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses |
000204 (2011) |
| Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design |
000211 (2011) |
| Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models |
000258 (2010) |
| Thermal aging model of InP/InGaAs/InP DHBT |
000269 (2010) |
| Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base |
000277 (2010) |
| Preliminary results of storage accelerated aging test on InP/InGaAs DHBT |
000355 (2010) |
| Band structure at heterojunction interfaces of GaInP solar cells |
000394 (2009) |
| Strained InGaAsP multi-quantum-well structures for InP-based wide linewidth and polarization-insensitive semiconductor optical amplifiers |
000417 (2009) |
| Monolithic integration of InP-based transistors on Si substrates using MBE |
000437 (2009) |
| InP DHBT selector-driver with 2 × 2.7 V swing for 100 Gbit/s operation |
000489 (2008) |
| Theoretical and numerical investigations of carriers transport in N-semi-insulating-N and P-semi-insulating-P diodes : A new approach |
000532 (2008) |
| New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements |
000732 (2007) |
| A Monolithic MQW InP-InGaAsP-Based Optical Comb Generator |
000798 (2006) |
| Modelling and simulation of InGaP solar cells under solar concentration : Series resistance measurement and prediction |
000870 (2005) |
| Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor |
000923 (2005) |
| Non-empirical prediction of solar cell degradation in space |
000A09 (2005) |
| Comparison between carried-induced optical index, Ioss variations and carrier lifetime in GaInAsP/InP heterostructures for 1.55 μm DOS application |
000A10 (2005) |
| Comments on: Microwave noise modeling for InP-InGaAs HBTs. Authors' reply |
000A14 (2005) |
| As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system |
000D33 (2003) |
| Metastability effects in InGaP solar cells |
000E86 (2002) |
| Transistors Bipolaires à hétérojonction sur substrat GaAs : Résultats de fiabilité et circuits intégrés monolithiques : Croissance épitaxiale en phase vapeur aux organométalliques |
000F77 (2002) |
| Mechanism of irradiation induced degradation of solar cells |
000F91 (2002) |
| Irradiation-induced degradation in solar cell: characterization of recombination centres |
000F98 (2002) |
| InP DHBT technology and design for 40 Gbit/s full-rate-clock communication circuits |
001159 (2001) |
| Solar cell degradation by electron irradiation. Comparison between Si, GaAs and GaInP cells |
001168 (2001) |
| Radiation-induced defects in solar cell materials |
001646 (1999) |
| Surface passivation of composition graded base in GaAlAs/GalnP/GaAs heterojunction bipolar transistor |
001851 (1998-07) |
| ETUDES EXPERIMENTALES ET MODELISATION DE LA DIFFUSION DU Be DANS DES STRUCTURES EPITAXIEES III-V |
001890 (1998-02) |
| Circuits intégrés bipolaires ultra-rapides : méthodologie de conception et applications pour les transmissions optiques |
001C76 (1997) |
| Evaluation of the properties of hydrogenated InP/InGaAsP double heterostructure waveguides |
002350 (1994) |
| Strained multi-quantum well heterostructures for lasers, modulators and integrated optical devices at 1.3-1.55 μm |
002359 (1994) |
| Sensitivity to electrostatic discharges of low-cost' 1.3 μm laser diodes: a comparative study |
002405 (1994) |
| GaInP-GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposiion for voltage-controlled oscilators and power amplifier microwave monolithic integrated circuits |
000005 (2014) |
| Backgating effect in III-V MESFET's: A physical model |
000008 (2013) |
| Uniquely and arbitrarily shaped laser resonators using 2D InAsP/InP photonic crystals |
000012 (2013) |
| Towards a monolithically integrated III-V laser on silicon: optimization of multi-quantum well growth on InP on Si |
000021 (2013) |
| Stability of InP oxide versus solvated electrons in liquid ammonia |
000023 (2013) |
| Spatial modulation of above-the-gap cathodoluminescence in InP nanowires |
000031 (2013) |
| Phosphazene like film formation on InP in liquid ammonia (223 K) |
000045 (2013) |
| Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits |
000051 (2013) |
| InP1-xAsx quantum dots in InP nanowires: A route for single photon emitters |
000052 (2013) |
| InAs/AISb quantum cascade lasers operating near 20 μm |
000059 (2013) |
| Fabrication and characterization of a δ-dope InAs/InP core shell nanowire transistor |
000064 (2013) |
| Efficiency limits of laser power converters for optical power transfer applications |
000069 (2013) |
| Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes |
000075 (2013) |
| A Large-Swing 112-Gb/s Selector-Driver Based on a Differential Distributed Amplifier in InP DHBT Technology |
000083 (2012) |
| Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure |
000113 (2012) |
| Morphological and structural properties of InP/Gd203 nanowires grown by molecular beam epitaxy on silicon substrate |
000120 (2012) |
| InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates |
000127 (2012) |
| Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon |
000137 (2012) |
| Comparison of InP Schottky diodes based on Au or Pd sensing electrodes for NO2 and O3 sensing |
000174 (2011) |
| Structural analysis of site-controlled InAs/InP quantum dots |
000176 (2011) |
| Sputtered hydrogenated amorphous silicon thin films for distributed Bragg reflectors and long wavelength vertical cavity surface emitting lasers applications |
000200 (2011) |
| Luminescence of Polyethylene Glycol Coated CdSeTe/ZnS and InP/ZnS Nanoparticles in the Presence of Copper Cations |
000203 (2011) |
| Investigation of the metastability behavior of CIGS based solar cells with ZnMgO-Zn (S,O,OH) window-buffer layers |
000209 (2011) |
| Influence of Ga content on defects in CuInxGa1-xSe2 based solar cell absorbers investigated by sub gap modulated photocurrent and admittance spectroscopy |
000210 (2011) |
| InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation |
000220 (2011) |
| Formation of Wurtzite InP Nanowires Explained by Liquid-Ordering |
000236 (2011) |
| Direct epitaxial growth of InP based heterostructures on SrTiO3/Si(0 0 1) crystalline templates |
000237 (2011) |
| Crystallographic orientation transition of InP islands on SrTiO3 substrates with the growth temperature |
000248 (2011) |
| All-optical wavelength conversion using mode switching in InP microdisc laser |
000254 (2010) |
| Wide InP Nanowires with Wurtzite/Zincblende Superlattice Segments Are Type-II whereas Narrower Nanowires Become Type-I: An Atomistic Pseudopotential Calculation |
000261 (2010) |
| The pH response of the InP/liquid ammonia interface at 223 K: A pure nernstian behavior |
000275 (2010) |
| Pulsed laser ablation of binary semiconductors: mechanisms of vaporisation and cluster formation : PHOTONICS AND NANOTECHNOLOGY |
000294 (2010) |
| Multiple steady state current-voltage characteristics in drift-diffusion modelisation of N type and semi-insulating GaAs Gunn structures |
000327 (2010) |
| Electrochemical and optical characterizations of anodic porous n-InP(10 0) layers |
000346 (2010) |
| Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface |
000350 (2010) |
| Cathodoluminescence Study of InP Photonic Structures Fabricated by Dry Etching |
000360 (2010) |
| An ARXPS study of the passivating layer formed on III-V surface by an innovative anodic treatment in liquid ammonia |
000371 (2009) |
| Variable range hopping conductivity and negative magnetoresistance in n-type InP semiconductor |
000390 (2009) |
| Study of the passivation mechanisms of boron doped diamond using the Amplitude Modulated Step Scan Fourier Transform Photocurrent Spectroscopy |
000391 (2009) |
| Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe |
000403 (2009) |
| SEM and XPS studies of nanohole arrays on InP(1 0 0) surfaces created by coupling AAO templates and low energy Ar+ ion sputtering |
000428 (2009) |
| Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound |
000430 (2009) |
| Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy |
000434 (2009) |
| Influence of the surface reconstruction on the growth of InP on SrTiO3(0 01) |
000447 (2009) |
| Hierarchical inorganic nanopatterning (INP) through direct easy block-copolymer templating |
000450 (2009) |
| Growth study of thin indium nitride layers on InP (10 0) by Auger electron spectroscopy and photoluminescence |
000467 (2009) |
| Critical thickness for InAs quantum dot formation on (311)B InP substrates |
000470 (2009) |
| Chemically Induced Mobility Gaps in Graphene Nanoribbons: A Route for Upscaling Device Performances |
000477 (2009) |
| A comparative study of Schottky barrier height enhancement by realized pseudo-Schottky diodes on p-InP |
000487 (2008) |
| Theoretical study of highly strained InAs material from first-principles modelling : application to an ideal QD |
000497 (2008) |
| Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies |
000498 (2008) |
| Study by EELS and EPES of the stability of InPO4/InP system |
000526 (2008) |
| One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots : First step towards single-photon source applications |
000537 (2008) |
| Nanoindentation response of a thin InP membrane |