| 000651 (2007) |
| Nitride-based heterostructures grown by MOCVD for near-and mid-infrared intersubband transitions |
| 000705 (2007) |
| Current status of AlInN layers lattice-matched to GaN for photonics and electronics |
| 000745 (2006) |
| Undoped and rare-earth doped GaN quantum dots on AlGaN |
| 000766 (2006) |
| Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE |
| 000799 (2006) |
| Meta-GGA calculation of the electronic structure of group III-V nitrides |
| 000825 (2006) |
| Full-potential electronic structure calculations of InN(AlN) layer embedded in GaN bulk |
| 000894 (2005) |
| Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities |
| 000909 (2005) |
| Ordering effects on the electronic structures of A1N/GaN, InN/GaN and InN/AlN superlattices |
| 000926 (2005) |
| Negative quasiclassical magnetoresistance in a high density two-dimensional electron gas in a AlxGa1-xN/GaN heterostructure |
| 000964 (2005) |
| First-principles study of cubic AlxGa1-xN alloys |
| 000984 (2005) |
| Elastic waves at the (001) and (110) surfaces of AlN, GaN and InN |
| 000A11 (2005) |
| Chemically ordered AlxGa1-xN alloys : Spontaneous formation of natural quantum wells |
| 000A70 (2004) |
| Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures |
| 000D12 (2003) |
| Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence |
| 000D67 (2003) |
| First-principles investigation of lattice constants and bowing parameters in wurtzite AlxGa1-xN, InxGa1-xN and InxAl1-xN alloys |
| 000D98 (2003) |
| Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire |
| 000F21 (2002) |
| Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells |
| 000F67 (2002) |
| Monte Carlo calculations of THz generation in wide gap semiconductors |
| 001012 (2002) |
| GaN epitaxy: How to characterize hazards for the operators |
| 001243 (2001) |
| Group-III nitride quantum heterostructures grown by molecular beam epitaxy |
| 001246 (2001) |
| First-principles calculations of optical properties of AlN, GaN, and InN compounds under hydrostatic pressure |
| 001248 (2001) |
| Excitons in nitride-based low-dimensional systems |
| 001476 (2000) |
| Charge density calculations for strained zinc blende GaN, InN and AlN |
| 001813 (1998-11) |
| Epitaxie par jets moléculaires de GaN, AlN, InN et leurs alliages : physique de la croissance et réalisation de nanostructures |
| 001952 (1998) |
| Plastic versus elastic misfit relaxation in III-nitrides grown by molecular beam epitaxy |
| 000672 (2007) |
| Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates |
| 000770 (2006) |
| Strain state analysis of InGaN/GaN : sources of error and optimized imaging conditions |
| 000823 (2006) |
| Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths |
| 000866 (2005) |
| V-defects and dislocations in InGaN/GaN heterostructures |
| 000886 (2005) |
| Study of correlation effects on stability of many-body complexes in III-V nitride quantum dots |
| 000904 (2005) |
| Photoluminescence characteristics of 1.5-μm Ga1-xInxNyAs1-y/GaAs structures grown by molecular beam epitaxy |
| 000928 (2005) |
| Monte Carlo calculations of hot-electron transport and diffusion noise in GaN and InN |
| 000932 (2005) |
| Micro-raman characterization of InxGa1-xN/GaN/Al2O3 heterostructures |
| 000943 (2005) |
| Interfacial structure of MBE grown InN on GaN |
| 000985 (2005) |
| Effects of the low temperature buffer and annealing on the properties of InN layers grown by MOVPE |
| 000A05 (2005) |
| Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots |
| 000A17 (2005) |
| Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1-xN quantum well structure |
| 000A91 (2004) |
| Quantitative evaluation of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructures |
| 000A96 (2004) |
| Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells |
| 000B10 (2004) |
| Nanoscale EELS analysis of InGaN/GaN heterostructures |
| 000B12 (2004) |
| Modelling of visible and near infrared wavelength quantum well devices made of zinc-blende InxGa1-xN |
| 000B13 (2004) |
| Modelling of indium rich clusters in MOCVD InxGa1-xN/GaN multilayers |
| 000B26 (2004) |
| Local structure in dilute nitrides probed by x-ray absorption spectroscopy |
| 000B53 (2004) |
| Experimental investigation of the CMN matrix element in the band anticrossing model for GaAsN and GaInAsN layers |
| 000B69 (2004) |
| Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy |
| 000B79 (2004) |
| Band structure calculations for dilute nitride quantum wells under compressive or tensile strain |
| 000B88 (2004) |
| Alloy effects in Ga1-xInxN/GaN heterostructures |
| 000D55 (2003) |
| In surface segregation in InGaN/GaN quantum wells |
| 000E87 (2002) |
| Nitrures de faible gap épitaxiés sur substrat GaAs pour application optoélectronique : Croissance épitaxiale en phase vapeur aux organométalliques |
| 000E99 (2002) |
| The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes |
| 000F25 (2002) |
| Small built-in electric fields in quaternary InAIGaN heterostructures |
| 000F36 (2002) |
| RF plasma investigations for plasma-assisted MBE growth of (Ga, In)(As, N) materials |
| 000F37 (2002) |
| Quantitative measurement of In fluctuation inside MOCVD InGaN QWs |
| 000F53 (2002) |
| Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells |
| 000F61 (2002) |
| Nitride-based long-wavelength lasers on GaAs substrates |
| 000F68 (2002) |
| Monte Carlo calculations of THz generation in nitrides |
| 001000 (2002) |
| In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes |
| 001074 (2001-10) |
| Matériaux innovants pour lasers à 1,3μm sur substrat de GaAs |
| 001142 (2001) |
| The dependence of the optical energies on InGaN composition |
| 001175 (2001) |
| Photoluminescence excitation spectroscopy of MBE grown InGaN quantum wells and quantum boxes |
| 001176 (2001) |
| Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers |
| 001178 (2001) |
| Photoconductance measurements and Stokes shift in InGaN alloys |
| 001187 (2001) |
| Optical properties of self-assembled InGaN/GaN quantum dots |
| 001199 (2001) |
| Monte Carlo simulation of terahertz generation in nitrides |
| 001201 (2001) |
| Modelling of absorption and emission spectra of InxGa1-xN layers grown by MBE |
| 001227 (2001) |
| Indium distribution within InxGa1-xN epitaxial layers: A combined resonant Raman scattering and Rutherford backscattering study |
| 001230 (2001) |
| InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300 K in the whole visible spectrum |
| 001231 (2001) |
| InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties |
| 001265 (2001) |
| Dual contribution to the stokes shift in InGaN-GaN Quantum wells |
| 001269 (2001) |
| Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy |
| 001276 (2001) |
| Carrier dynamics in group-III nitride low-dimensional systems: Localization versus quantum-confined stark effect |
| 001283 (2001) |
| Absorption and emission of (In, Ga)N/GaN quantum wells grown by molecular beam epitaxy |
| 001291 (2001) |
| (InGa)(NAs)/GaAs structures emitting in 1-1.6 μm wavelength range |
| 001296 (2000-12) |
| SPECTROSCOPIE OPTIQUE DE COUCHES MASSIVES DE GaN ET D'HETEROSTRUCTURES (In,Ga)N/GaN |
| 001422 (2000) |
| MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization |
| 001447 (2000) |
| GaN and GaInN quantum dots : an efficient way to get luminescence in the visible spectrum range |
| 001454 (2000) |
| Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots |
| 001524 (1999-10) |
| Études optiques de GaN et d'InGaN |
| 001674 (1999) |
| Recombination dynamics of excitons in III-nitride layers and quantum wells |
| 001689 (1999) |
| Observation of ordering and phase separation in InxGa1-xN layers |
| 001698 (1999) |
| Molecular beam epitaxy growth of nitride materials |
| 001739 (1999) |
| Electronic properties and strain effects in zinc blende GaN and InN |
| 001754 (1999) |
| Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data |
| 001765 (1999) |
| Carrier capture in InGaN quantum wells and hot carrier effects in GaN |
| 000711 (2007) |
| Combined EELS, LEED and SR-XPS study of ultra-thin crystalline layers of indium nitride on InP(1 0 0)- : Effect of annealing at 450 °C |
| 000728 (2007) |
| An evaluation of the growth of nitrides on semipolar substrates using two indicators |
| 000758 (2006) |
| Surface-plasmon resonances in indium nitride with metal-enriched nano-particles |
| 000760 (2006) |
| Superconductivity of InN with a well defined Fermi surface |
| 000768 (2006) |
| Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE |
| 000782 (2006) |
| Plasmonic effects in InN-based structures with nano-clusters of metallic indium |
| 000804 (2006) |
| Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experiments |
| 000807 (2006) |
| Investigation of InN layers grown by MOCVD using analytical and high resolution TEM : The structure, band gap, role of the buffer layers |
| 000824 (2006) |
| Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN |
| 000876 (2005) |
| Terahertz investigation of high quality indium nitride epitaxial layers |
| 000895 (2005) |
| Resonant Raman spectroscopy on InN |
| 000896 (2005) |
| Raman scattering by the longitudinal optical phonon in InN : Wave-vector nonconserving mechanisms |
| 000912 (2005) |
| Optical properties of InN with stoichoimetry violation and indium clustering |
| 000913 (2005) |
| Optical properties of InN related to surface plasmons |
| 000A89 (2004) |
| Raman scattering in hexagonal InN under high pressure |
| 000B15 (2004) |
| Mie resonances, infrared emission, and the band gap of InN |
