| 003072 (1985) |
| Molecular beam epitaxial growth and optical properties of Ga0.47In0.53As/Al0.48In0.52As on InP and Ga1-xInxAs/GaAs on GaAs quantum wells |
| 002727 (1993) |
| Characterization of GaAs and InGaAs double-quantum well heterostructure FET's |
| 002771 (1992-05) |
| Photodiode Métal-Semiconducteur-Métal (MSM) AlInAs/GaInAs pour transmission sur fibre optique |
| 002788 (1992) |
| band-offset transitivity in strained (001) heterointerfaces |
| 002A52 (1991) |
| Double junction AllnAs/GaInAs multiquantum well avalanche photodiodes |
| 002B35 (1990) |
| MOMBE growth of high-quality InP and GalnAs bulk, heterojunction and quantum well layers |
| 002B67 (1990) |
| Enhancement of group III atom interdiffusion by nondopant oxygen implants in In0.53Ga0.47As-In0.52Al0.48As multiquantum wells |
| 002B69 (1990) |
| Electronic properties of Ga(In)As-based heterostructures |
| 002E99 (1987) |
| Photoluminescence investigation of InGaAS-InP quantum wells |
| 002F05 (1987) |
| Monolayer epitaxy of III-V compounds by low-pressure metalorganic chemical vapor deposition |
| 002F56 (1987) |
| A study of parallel conduction and the quantum Hall effect in GaInAs-AlInAs heterojunctions using magnetotransport measurements under hydrostatic pressure |
| 003037 (1986) |
| Comparison of Auger recombination in GaInAs-AlInAs multiple quantum well structure and in bulk GaInAs |
| 000221 (2011) |
| Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (3 1 1)A GaAs substrates |
| 000394 (2009) |
| Strained InGaAsP multi-quantum-well structures for InP-based wide linewidth and polarization-insensitive semiconductor optical amplifiers |
| 000419 (2009) |
| Microstructure analysis in strained-InGaN/GaN multiple quantum wells |
| 002377 (1994) |
| Microwave miniband NDC in GaInAs/AlInAs superlattices |
| 002386 (1994) |
| Low temperature low voltage operation of HEMTs on InP |
| 002422 (1994) |
| Determination of the basic parameters of pseudomorphic GaInAs quantum wells by means of simultaneous transport and optical investigations |
| 002501 (1993-02) |
| Etude théorique des couches actives AlGaAs/InGaAs/GaAs à l'aide d'un modèle de résolution autocohérente des équations de Schrodinger et de Poisson |
| 002531 (1993) |
| Thermal stability of InGaAs/InGaAsP quantum wells |
| 002536 (1993) |
| Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells |
| 002582 (1993) |
| Photoluminescence study of the 2D electron gas formed at the interface of strained InGaAs/InP single heterostructures |
| 002591 (1993) |
| Optical tools for intermixing diagnostic : application to InGaAs/InGaAsP microstructures |
| 002599 (1993) |
| Optical characterization of InP/InAlAs/InP interfaces grown by MOVPE |
| 002600 (1993) |
| Optical bistability at 980 nm in a strained InGaAs/GaAs multiple quantum well microcavity with resonant periodic nonlinearity |
| 002607 (1993) |
| Non-destructive characterization of III-V alloy multilayer structures using spectroscopic ellipsometry |
| 002608 (1993) |
| Non-destructive approaches to interdiffusion phenomena across GaInAs/GaInAsP interfaces : photoluminescence vs. Raman |
| 002617 (1993) |
| Monolayer scale study of segregation effects in InAs/GaAs heterostructures |
| 002618 (1993) |
| Microwave performance of 0.4μm gate metamorphic In0.29Al0.71As/In0.3Ga0.7As HEMT on GaAs substrate |
| 002622 (1993) |
| Materials problems for the development of InGaAs/InAlAs HEMT technology |
| 002645 (1993) |
| Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBE |
| 002650 (1993) |
| InGaAs/InP strained layer quantum wells grown by molecular beam epitaxy |
| 002658 (1993) |
| High resolution in situ measurement of the surface composition of InxGa1-xAs and InxAl1-xAs at growth temperature |
| 002659 (1993) |
| High quality 0.98 μm GaInAs/GaAs/GaInP lasers growth by CBE using tertiarybutylarsine and tertiarybutylphosphine |
| 002662 (1993) |
| Growth of InGaAs/GaAs quantum wells with perfectly abrupt interfaces by molecular beam epitaxy |
| 002678 (1993) |
| Evidences of non-commutativity and non-transivity of band discontinuities in InP-Al(In)As-Ga(In)As heterostructures |
| 002679 (1993) |
| Evidence for non-uniform interface thickness in strained InGaAs/InP quantum wells |
| 002684 (1993) |
| Electronic structure of (In,Ga)As-(Ga,Al)As strained-layer quantum wells |
| 002695 (1993) |
| Electrical characterization of lattice-mismatched InP/InxGa1-xAs/InP heterostructures and PIN photodiodes grown by LP-MOCVD |
| 002726 (1993) |
| Characterization of lattice-matched and strained GaInAs/AlInAs HEMT structures by photoluminescence spectroscopy |
| 002747 (1993) |
| A comprehensive optimization of InAlAs molecular beam epitaxy for InGaAs/InAlAs HEMT technology |
| 002756 (1992-11) |
| Contribution à l'étude des défauts DX et EL2 et propriétés de transport dans les structures à plan de dopage GaInAs, GaAs et dans les hétérojonctions InGaAs/AlGaAs, GaInP/GaAs |
| 002810 (1992) |
| Spin orientation by optical pumping in two GaAs/AlxGa1-xAs quantum wells |
| 002816 (1992) |
| Reception of frequency-modulated optical signals through intracavity optical power change in injection-locked λ/4-shifted DFB laser |
| 002820 (1992) |
| Photoreflectance and piezophotoreflectance studies of strained-layer InxGa1-xAs-GaAs quantum wells |
| 002825 (1992) |
| Optimization of optical waveguide modulators based on Wannier-Stark localization : an experimental study |
| 002829 (1992) |
| Optical properties and electronic structure of thin (Ga,In)As-AlAs multiple quantum wells and superlattices under internal and external strain fields |
| 002835 (1992) |
| Nonlinear gain and its influence on the laser dynamics in single-quantum-well lasers operating at the first and second quantized states |
| 002846 (1992) |
| Metamorphic In0.3Ga0.7As/In0.29Al0.71As layer on GaAs : a new structure for high performance high electron mobility transistor realization |
| 002856 (1992) |
| Investigations of MOCVD-grown AllnAs-InP type II heterostructures |
| 002857 (1992) |
| Intrinsic strain at slightly mismatched InGaAs/InP interfaces as studied by transmission electron microscopy |
| 002858 (1992) |
| Intervalence band absorption in strained and unstrained InGaAs multiple quantum well structures |
| 002859 (1992) |
| Interferometric measurement of the linewidth enhancement factor of a 1.55 μm strained multiquantum-well InGaAs/InGaAsP amplifier |
| 002878 (1992) |
| In situ probing at the growth temperature of the surface composition of (InGa)As and (InAl)As |
| 002884 (1992) |
| High-frequency operation of very low voltage, 1.55μm single-mode optical waveguide modulator based on wannier-stark localization |
| 002885 (1992) |
| High speed ultralow chirp 1.55μm MBE grown GaInAs/AlGaInAs MQW DFB lasers |
| 002886 (1992) |
| High power, 0.98 μm, Ga0.8As/GaAs/Ga0.51In0.49P multiple quantum well laser |
| 002894 (1992) |
| Gain measurement in InGaAs/InGaAsP multiquantum-well broad-area lasers |
| 002895 (1992) |
| Ga1-xInxAs/InAsyP1-y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVD |
| 002904 (1992) |
| Electroabsorption modulator based on Wannier-Stark localization with 20 GHz/V efficiency |
| 002911 (1992) |
| Direct determination of the valence-band offsets at Ga0.47In0.53As/InP and InP/Ga0.47In0.53As heterostructures by ultraviolet photoemission spectroscopy |
| 002913 (1992) |
| Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy |
| 002951 (1991) |
| Etude théorique du transport électronique et du contrôle de charge dans Al0,48In0,52As/Ga0,47In0,53As/InP. Applications à la réalisation de HEMT |
| 002957 (1991) |
| Wavelength dependence of temporal response of high-speed GaInAs/AIInAs superlattice photodiodes |
| 002959 (1991) |
| Valence-band coupling in thin (Ga,In)As-AlAs strained quantum wells |
| 002963 (1991) |
| Tunnel deep level transient spectroscopy on a single quantum well |
| 002964 (1991) |
| Transverse magnetic field effects on the resonant tunneling current |
| 002975 (1991) |
| Strain induced 2D-3D growth mode transition in molecular beam epitaxy of InxGa1-xAs on GaAs (001) |
| 002977 (1991) |
| Stark effect in GaInAs/GaInAsP quantum-wells |
| 002A03 (1991) |
| Metal-organic molecular beam epitaxy of GaAs and Ga0.5In0.5P |
| 002A04 (1991) |
| Metal organic molecular beam epitaxy growth of Ga0.5In0.5P/GaAs quantum well structures |
| 002A20 (1991) |
| High-pressure investigation of an (InAl)As-(InGa)As resonant tunnelling double-barrier structure |
| 002A21 (1991) |
| High static performance GaInAs-GaInAsP SCH MQW 1.5 μm wavelength buried ridge stripe lasers |
| 002A25 (1991) |
| Gain compression and phase-amplitude coupling in GaInAs quantum well lasers with three, five and seven wells |
| 002A32 (1991) |
| First DFB GRIN-SCH GalnAs/AlGalnAs 1.55μm MBE MQW active layer buried ridge structure lasers |
| 002A33 (1991) |
| Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence |
| 002A50 (1991) |
| Effect of metal-organic composition fluctuation on the atmospheric-pressure metal-organic vapor phase epitaxy growth of GaAlAs/GaAs and GaInAs/InP structures |
| 002A65 (1991) |
| Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures : growth kinetics, electrical and optical properties |
| 002A71 (1991) |
| Accurate determination of the conduction-band offset of a single quantum well using deep level transient spectroscopy |
| 002A90 (1990) |
| Very low drive voltage optical waveguide modulation in an InGaAs/InAIAs superlattice |
| 002A92 (1990) |
| Ultra high transconductance 0•25 μm gate MESFET with strained InGaAs buffer layer |
| 002B01 (1990) |
| The first fabrication of n- and p-type Ga0.49In0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD |
| 002B02 (1990) |
| The (InGa)As-5InAl)As resonant tunnelling double barrier structure subjected to a transverse magnetic field |
| 002B06 (1990) |
| Strained-layer InGaAs/InAlAs multiple quantum wells for efficient optical waveguide modulation at 1.55 μm |
| 002B24 (1990) |
| Optical properties of GaInAs/InP multi-quantum wells grown by low-pressure MOVPE |
| 002B26 (1990) |
| Optical investigations of the band offsets in an InGaAs-InGaAsP-InP double-step heterostructure |
| 002B27 (1990) |
| Optical investigation of the band offsets in an InGaAs-InGaAsP-InP double-step quantum well |
| 002B41 (1990) |
| Interfacial traps in Ga0.47In0.53As/InP heterostructures |
| 002B42 (1990) |
| Interdiffusion of InGaAs/InP quantum wells by germanium ion implantation |
| 002B51 (1990) |
| Improving the characteristics of InAlAs/InGaAs heterojunction bipolar transistors by employing thin base and collector layers |
| 002B56 (1990) |
| High performance DFB-MQW lasers at 1•5 μm grown by GSMBE |
| 002B65 (1990) |
| Epitaxial growth of InP/InAs/InP quantum wells |
| 002B66 (1990) |
| Enhancement of intrinsic photoluminescence due to lateral confinement in InP/InGaAs quantum wires and dots |
| 002C18 (1989) |
| Dimensionnement et performance potentielles des MISFET à hétérojonction |
| 002C26 (1989) |
| Very uniform epitaxy |
| 002C32 (1989) |
| Study of hopping in two dimensional electron gas in InGaAs/InP heterostructures with two subbands |
| 002C40 (1989) |
| Recent advances in III-V compounds on silicon |
| 002C41 (1989) |
| Quantitative evaluation of the surface segregation in III-V ternary alloys by X-ray photoelectron spectroscopy |
| 002C69 (1989) |
| Hydrogen passivation of shallow acceptors in p-type InP |
| 002C93 (1989) |
| 1.3-1.55 μm wavelength integrated photoreceiver using GaInAS/GaAs heteroepitaxy |
