| 001C15 (1997) |
| Room temperature scanning photoluminescence for mapping the lifetime and the doping density in epitaxial layers |
| 001F73 (1996) |
| Application of spectrally resolved scanning photoluminescence to assess relaxation processes of InGaAs and InAlAs layers strained in compression and tension |
| 002199 (1995) |
| Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells |
| 000A98 (2004) |
| Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots |
| 000B33 (2004) |
| Interplay between strain and confinement effects on optical and structural properties in InGaAs/GaAs epilayers and quantum wells |
| 000B49 (2004) |
| Growth and characterization of totally relaxed InGaAs thick layers on strain-relaxed paramorphic InP substrates |
| 000B54 (2004) |
| Enhancement of atomic ordering in In0.53Ga0.47As/InP: a comparison between trimethylarsenic and arsine |
| 001039 (2002) |
| Cascaded photonic crystal guides and cavities: Spectral studies and their impact on integrated optics design : Feature section on photonic crystal structures and applications |
| 001218 (2001) |
| Interaction strength between the highly localised nitrogen states and the extended semiconductor matrix states in GaInNAs |
| 001234 (2001) |
| In situ etching at InGaAs/GaAs quantum well interfaces |
| 001530 (1999-10) |
| DYNAMIQUE DE L'ÉMISSION SPONTANÉE DANS LES MICROCAVITÉS EN SEMI-CONDUCTEUR À MIROIRS MÉTALLIQUES |
| 001594 (1999-02) |
| MODES DE CROISSANCE DE NANO-STRUCTURES DE SEMI-CONDUCTEURS III-V OBTENUS PAR EPITAXIE : ETUDES PAR MICROSCOPIE ELECTRONIQUE EN TRANSMISSION |
| 001647 (1999) |
| Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine |
| 001913 (1998) |
| Time-resolved photoluminescence study of GaInAs/AlGaInAs superlattices |
| 001932 (1998) |
| Structural and morphological characteristics of InGaAs/GaAs quantum well structures on tilted (1 1 1)B GaAs grown by MBE |
| 001980 (1998) |
| Light-hole resonant tunnelling through tensile-strained GaInAs quantum wells |
| 001981 (1998) |
| Kinetics of dark excitons and excitonic trions in InGaAs single quantum well |
| 001A69 (1997-11) |
| ETUDES DES PROPRIETES OPTIQUES DE PUITS QUANTIQUES InGaAs/GaAs ET DE SUPERRESEAUX GaAs/AlAs ELABORES SUR PSEUDOSUBSTRAT InGaAs |
| 001C16 (1997) |
| Reversal of Zeeman splitting in InGaAs/InP quantum wires in high magnetic field |
| 001C52 (1997) |
| Indium surface segregation during chemical beam epitaxy of Ga1-xInxAs/GaAs and Ga1-xInxP/GaAs heterostructures |
| 001C69 (1997) |
| Growth of InGaAs/InP structures by gas source molecular beam epitaxy on SiO2-patterned substrates for optoelectronic applications |
| 001C76 (1997) |
| Evaluation of the properties of hydrogenated InP/InGaAsP double heterostructure waveguides |
| 001C84 (1997) |
| Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions |
| 001C94 (1997) |
| Conduction band offset ratio of the (In,Ga)As/GaAs system and (In,Ga)As alloy properties |
| 001D04 (1997) |
| Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model |
| 001E75 (1996) |
| Spin repolarization in bidimensional gas of interacting excitons |
| 001F48 (1996) |
| Evaluation of H-plasma and thermal oxide desorption procedures for MBE regrowth of an InP/InGaAs/InP quantum well |
| 001F68 (1996) |
| CL and EBIC analysis of a p+-InGaAs/n-InGaAs/n-InP/n+-InP heterostructure |
| 002012 (1995-10) |
| Propriétés optiques de puits quantiques InGaAs/GaAs élaborés sous jets moléculaires |
| 002014 (1995-10) |
| Etude du triméthylarsenic comme alternative à l'arsine pour l'Epitaxie en Phase Vapeur aux OrganoMétalliques de semiconducteurs III-V sur substrats InP |
| 002015 (1995-10) |
| Etude des propriétés optiques des microstructures InGaAs/InAlAs épitaxiées sur InP |
| 002047 (1995-06) |
| Mise au point du procédé d'élaboration de matériaux semiconducteurs et d'hétérostructures III-V basées sur GaAs, Ga(1-y)A1xAs, G2(1-x)InxAs |
| 002140 (1995) |
| Origin of the blue shift observed in highly strained (Ga, In)As quantum wells grown on GaAs(001) vicinal surfaces |
| 002141 (1995) |
| Optical pumping in In0.35Ga0.65As/GaAs heterostructures obtained by molecular beam epitaxy at 400°C |
| 002169 (1995) |
| Hole spin relaxation in intrinsic quantum wells |
| 002283 (1994-06) |
| Etude par microscopie électronique en transmission de structures laser (GaInAsP/InP) et de la découpe de puits quantiques (GaAs, GaAlAs) par un mécanisme de glissement de dislocations |
| 002345 (1994) |
| Terrace length commensurability and surface reconstruction in highly strained InGaAs/GaAs quantum wells grown on vicinal substrates |
| 002348 (1994) |
| Structural investigations of InGaAs/InGaAsSLSs for optoelectronic device applications |
| 002415 (1994) |
| Enhanced exciton blue shift in spin polarized dense exciton system in quantum wells |
| 002427 (1994) |
| Deep etched InGaAs/InP quantum dots with strong lateral confinement effects |
| 002468 (1993-10) |
| Spectroscopie optiques d'excitation de microstructures 3-5 contraintes |
| 002551 (1993) |
| Spin relaxation of excitons in strained InGaAs/GaAs quantum wells |
| 002552 (1993) |
| Spin orientation by optical pumping of strained In0.35Ga0.65As/GaAs quantum wells grown on vicinal substrates |
| 002590 (1993) |
| Optically induced excitonic distribution in GaInAs-AlGaInA semiconductor superlattices under an electric field |
| 002593 (1993) |
| Optical pumping in strained In0.2Ga0.8As/GaAs quantum wells |
| 002604 (1993) |
| Observation of many-body effects and band-gap renormalization in low-dimensional systems with built-in piezoelectric fields |
| 002606 (1993) |
| Observation by electroabsorption of strain-enhanced interface roughening in GaxIn1-xAs/Ga0.22In0.78As0.48P0.52 quantum wells prepared by gas-source molecular beam epitaxy |
| 002614 (1993) |
| Morphology of InGaAs/InP QWs : from excitonic spectroscopy to HR-TEM analyses |
| 002633 (1993) |
| Localization in highly strained In0.35Ga0.65As/GaAs ultrathin quantum wells |
| 002646 (1993) |
| Indium segregation and misorientation effects on the optical properties of MBE grown In0.35Ga0.65As/GaAs quantum wells |
| 002652 (1993) |
| In situ core-level photoelectron spectroscopy study of indium segregation at GaInAs/GaAs heterojunctions grown by molecular-beam epitaxy |
| 002702 (1993) |
| Dramatic photoinduction of hole tunneling in double quantum wells with built-in piezoelectric fields |
| 000093 (2012) |
| Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures |
| 000262 (2010) |
| The effect of the excitation and of the temperature on the photoluminescence circular polarization of AlInAs/AlGaAs quantum dots |
| 000636 (2007) |
| Photoluminescence properties of a Si doped InGaAs/InGaAlAs superlattice |
| 000953 (2005) |
| High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system |
| 000955 (2005) |
| High In content pseudomorphic InGaAs layers for high-mobility heterostructures on InP (001) |
| 000960 (2005) |
| Grating enhanced MOEMS : a novel class of beam steering devices |
| 000975 (2005) |
| Evidence of lateral coupling in long wavelength vertically stacked InAs/GaAs(001) quantum dots |
| 000A13 (2005) |
| CBr4 and be heavily doped InGaAs grown in a production MBE system |
| 000A59 (2004) |
| Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission |
| 000A66 (2004) |
| TEM evaluation of strain and stress in III-V semiconductor epitaxial structures |
| 000A76 (2004) |
| Stress and surface energies versus surface nanostructuring: the InGaAs/InP(0 0 1) epitaxial system |
| 000B20 (2004) |
| MOVPE growth of A1GaInAs-InP highly tensile-strained MQWs for 1.3 μm low-threshold lasers |
| 000B24 (2004) |
| Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networks |
| 000B31 (2004) |
| Investigation of recombination processes involving defect-related states in (Ga, In)(As, Sb, N) compounds |
| 000B56 (2004) |
| Electron-beam-induced reactivation of Si dopants in hydrogenated two-dimensional AlGaAs heterostructures: a possible new route for III-V nanostructure fabrication |
| 000B79 (2004) |
| Band structure calculations for dilute nitride quantum wells under compressive or tensile strain |
| 000C92 (2003) |
| Structural properties of strained piezoelectric [1 1 1]A-oriented InGaAs/GaAs quantum well structures grown by MOVPE |
| 000C97 (2003) |
| Spin polarization dynamics in n-doped InAs/GaAs quantum dots |
| 000D00 (2003) |
| Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices |
| 000D07 (2003) |
| Radiative recombination lifetime of excitons in self-organized InAs/GaAs quantum dots |
| 000D11 (2003) |
| Plastic deformation of III-V semiconductors under concentrated load |
| 000D18 (2003) |
| Optical signature of atomic ordering in In0.53Ga0.47As/InP: photoluminescence properties and IR response |
| 000D41 (2003) |
| Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells |
| 000D82 (2003) |
| Direct evidence for group III atoms migration in aged 980 nm InGaAs/AlGaAs pump lasers |
| 000D93 (2003) |
| Characterization of piezoelectric and pyroelectric properties of MOVPE-grown strained (111)A InGaAs/GaAs QW structures by modulation spectroscopy |
| 000E03 (2003) |
| Anomalous I versus V characteristics of InGaAs/InAlAs strained multiple quantum well structures for amplitude modulators |
| 000F23 (2002) |
| Spin dynamics of neutral and charged excitons in InAs/GaAs quantum dots: towards Q-bit implementation? |
| 000F32 (2002) |
| Real examples of surface reconstructions determined by direct methods |
| 000F75 (2002) |
| Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3 μm |
| 000F87 (2002) |
| Low misfit systems as tools for understanding dislocation relaxation mechanisms in semiconducting heteroepitaxial films |
| 000F95 (2002) |
| Influence of the InAs coverage on the phonon-assisted recombination in InAs/GaAs quantum dots |
| 001024 (2002) |
| Electron spin redistribution due to Pauli blocking in quantum dots and quantum wells |
| 001170 (2001) |
| Probing the electronic properties of disordered two-dimensional systems by means of resonant tunnelling |
| 001194 (2001) |
| Non-linear solid solution strengthening of InGaAs alloy |
| 001206 (2001) |
| Magnetic field induced insulating phase in two-dimensional electron gas in InGaAs/InP : The Wigner solid |
| 001217 (2001) |
| Intersublevel emission in InAs/GaAs quantum dots |
| 001220 (2001) |
| Infrared spectroscopy of self-organized InAs nanostructures grown on InAlAs/InP(001) for infrared photodetection applications |
| 001252 (2001) |
| Enhanced shot noise in long quasi-diffusive S-N-S junctions |
| 001258 (2001) |
| Electrical transport properties in (111) growth-axis GaAlAs/GaInAs heterostructures |
| 001264 (2001) |
| Dynamical redistribution of mean electron spin over the energy spectrum of quantum dots |
| 001272 (2001) |
| Comparative models for diffusion of Be in InGaAs/InP heterostructures |
| 001284 (2001) |
| Absolute determination of the Fermi level pinning at the dielectric/semiconductor interface in GaAs based heterostructures |
| 001286 (2001) |
| A model for diffusion of beryllium in InGaAs/InP heterostructures |
| 001359 (2000) |
| Réalisation de structures photoniques avancées |
| 001382 (2000) |
| Structural and optical characterization of self-assembled GaInAs islands grown on A1InAs/InP (113) surfaces |
| 001386 (2000) |
| Strain relaxation in surface nano-structures studied by X-ray diffraction methods |
| 001388 (2000) |
| Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001) |
| 001421 (2000) |
| Magneto-photoluminescence study of energy levels of self-organised InAs/GaAs quantum dots |
