| 000708 (2007) |
| Continuous-wave operation of photonic band-edge laser at 1.55 μm on silicon wafer |
| 000736 (2007) |
| 1.3 μm VCSELs : InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells and InAs/GaAs quantum dots-three candidates as active material |
| 000739 (2006) |
| Régime impulsionnel 300fs, 100 pJ, autodémarrant généré par un laser à fibre Er3+ avec absorbant saturable InGaAs/InP dopés fer ultrarapide |
| 000742 (2006) |
| Génération d'impulsions courtes dans un laser à fibre dopée erbium grâce à la combinaison d'un absorbant saturable rapide et d'effets de polarisation |
| 000835 (2006) |
| Erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well saturable absorber |
| 000915 (2005) |
| Optical interconnect : a back end integration scheme for waveguides and optoelectronic InP components |
| 000960 (2005) |
| Grating enhanced MOEMS : a novel class of beam steering devices |
| 000A66 (2004) |
| TEM evaluation of strain and stress in III-V semiconductor epitaxial structures |
| 000A98 (2004) |
| Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots |
| 000B24 (2004) |
| Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networks |
| 000D11 (2003) |
| Plastic deformation of III-V semiconductors under concentrated load |
| 000D18 (2003) |
| Optical signature of atomic ordering in In0.53Ga0.47As/InP: photoluminescence properties and IR response |
| 000D93 (2003) |
| Characterization of piezoelectric and pyroelectric properties of MOVPE-grown strained (111)A InGaAs/GaAs QW structures by modulation spectroscopy |
| 000F01 (2002) |
| TEM evaluation of epitaxial strain in III-V semi-conductors: evidence of coherent and incoherent stress relaxation |
| 001594 (1999-02) |
| MODES DE CROISSANCE DE NANO-STRUCTURES DE SEMI-CONDUCTEURS III-V OBTENUS PAR EPITAXIE : ETUDES PAR MICROSCOPIE ELECTRONIQUE EN TRANSMISSION |
| 001677 (1999) |
| Pressure and Hall sensors : What does MBE allow to do? |
| 001883 (1998-03) |
| Anisotropie optique des hétérostructures de semiconducteurs III-V sans atome commun et l'effet Pockels Confiné quantiquement |
| 001C15 (1997) |
| Room temperature scanning photoluminescence for mapping the lifetime and the doping density in epitaxial layers |
| 001C84 (1997) |
| Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions |
| 001C94 (1997) |
| Conduction band offset ratio of the (In,Ga)As/GaAs system and (In,Ga)As alloy properties |
| 001F70 (1996) |
| Binding energies of excitons and charged excitons in GaAs/Ga(In)As quantum dots |
| 001F71 (1996) |
| Benefits of chemical beam epitaxy for micro and optoelectronic applications |
| 002060 (1995-04) |
| Etude par microscopie électronique en transmission de la relaxation des contraintes dans les hétérostructures GaInAs/GaAs fortement désadaptées |
| 002069 (1995-03) |
| Epitaxie localisée par jets chimiques sur substrats GaAs et InP |
| 002084 (1995-01) |
| Modification des propriétés optiques des structures doubles puits quantiques GaAs-(Ga,In)As sous l'effet d'un champ électrique |
| 002140 (1995) |
| Origin of the blue shift observed in highly strained (Ga, In)As quantum wells grown on GaAs(001) vicinal surfaces |
| 002183 (1995) |
| Emission energies of Si-DX centers in various AlGaAs microstructures |
| 002199 (1995) |
| Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells |
| 002271 (1994-07) |
| Contribution à l'optimisation de structures laser à puits quantiques contraints sur la maille d'InP |
| 002475 (1993-09) |
| Etude par spectroscopie de photoélectrons de surfaces et interfaces de semi-conducteurs III-V préparées par épitaxie par jets moléculaires: applications à la formation de barrières de Schottky et d'hétérostructures épitaxiées |
| 002744 (1993) |
| A new encapsulation method of InP during post implantation annealing |
| 000216 (2011) |
| Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 μm band for silicon photonics |
| 000657 (2007) |
| Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures |
| 000729 (2007) |
| All-optical tunability of InGaAsP/InP microdisk resonator by infrared light irradiation |
| 000732 (2007) |
| A Monolithic MQW InP-InGaAsP-Based Optical Comb Generator |
| 000738 (2006) |
| Structures à îlots quantiques sur substrat InP(100) pour l'émission dans le moyen infrarouge (2-5μm) |
| 000844 (2006) |
| Design and fabrication of GaInAsP/InP VCSEL with two a-Si/a-SiNx Bragg reflectors |
| 000914 (2005) |
| Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer |
| 000945 (2005) |
| Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes |
| 000955 (2005) |
| High In content pseudomorphic InGaAs layers for high-mobility heterostructures on InP (001) |
| 000959 (2005) |
| Ground state transition energies in biased InAs/GaAs quantum dots |
| 000975 (2005) |
| Evidence of lateral coupling in long wavelength vertically stacked InAs/GaAs(001) quantum dots |
| 000996 (2005) |
| Design of monolithic integrated Bragg gratings in InGaAsP/InP materials as chirped pulse compressors |
| 000A13 (2005) |
| CBr4 and be heavily doped InGaAs grown in a production MBE system |
| 000A23 (2004-06-15) |
| Measurements of optical losses in mid-infrared semiconductor lasers using Fabry-Perot transmission oscillations |
| 000A30 (2004-05-07) |
| Excitonic Energy Shell Structure of Self-Assembled InGaAs/GaAs Quantum Dots |
| 000A31 (2004-05-03) |
| Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb-GaInAs/GaAs bilayer quantum wells |
| 000A46 (2004-02-02) |
| Single photon emission from site-controlled pyramidal quantum dots |
| 000A76 (2004) |
| Stress and surface energies versus surface nanostructuring: the InGaAs/InP(0 0 1) epitaxial system |
| 000A77 (2004) |
| Spin dynamics in undoped and n-doped InAs/GaAs quantum dots |
| 000B05 (2004) |
| Non-universal scaling in the integer quantum Hall effect regime in two-dimensional electron gas in InGaAs/InP heterostructures |
| 000B28 (2004) |
| Linewidth enhancement factor in InGaAs quantum-dot amplifiers |
| 000B33 (2004) |
| Interplay between strain and confinement effects on optical and structural properties in InGaAs/GaAs epilayers and quantum wells |
| 000B49 (2004) |
| Growth and characterization of totally relaxed InGaAs thick layers on strain-relaxed paramorphic InP substrates |
| 000B54 (2004) |
| Enhancement of atomic ordering in In0.53Ga0.47As/InP: a comparison between trimethylarsenic and arsine |
| 000B56 (2004) |
| Electron-beam-induced reactivation of Si dopants in hydrogenated two-dimensional AlGaAs heterostructures: a possible new route for III-V nanostructure fabrication |
| 000B79 (2004) |
| Band structure calculations for dilute nitride quantum wells under compressive or tensile strain |
| 000B86 (2004) |
| Analysis of local deformations in heterostructures containing short period superlattices by high-resolution transmission electron microscopy |
| 000C04 (2003-12-15) |
| Continuum transitions and phonon coupling in single self-assembled Stranski-Krastanow quantum dots |
| 000C05 (2003-12-15) |
| Acoustic phonon sidebands in the emission line of single InAs/GaAs quantum dots |
| 000C19 (2003-08-18) |
| Influence of carrier localization on modulation mechanism in photoreflectance of GaAsN and GaInAsN |
| 000C37 (2003-05-19) |
| Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells |
| 000C41 (2003-05-01) |
| Analysis of multijunction solar cell degradation in space and irradiation induced recombination centers |
| 000C51 (2003-03-24) |
| GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm |
| 000C54 (2003-03-01) |
| In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells |
| 000D00 (2003) |
| Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices |
| 000D07 (2003) |
| Radiative recombination lifetime of excitons in self-organized InAs/GaAs quantum dots |
| 000D74 (2003) |
| Excitonic polarons in semiconductor quantum dots |
| 000D82 (2003) |
| Direct evidence for group III atoms migration in aged 980 nm InGaAs/AlGaAs pump lasers |
| 000E03 (2003) |
| Anomalous I versus V characteristics of InGaAs/InAlAs strained multiple quantum well structures for amplitude modulators |
| 000E15 (2002-12-15) |
| Long dephasing time and high-temperature conductance fluctuations in an open InGaAs quantum dot |
| 000E30 (2002-10-15) |
| Dephasing of intersublevel polarizations in InAs/GaAs self-assembled quantum dots |
| 000E32 (2002-10-07) |
| Interferometric correlation spectroscopy in single quantum dots |
| 000E34 (2002-09-01) |
| Gain spectra of coupled InGaAsP/InP quantum wells measured with a segmented contact traveling wave device |
| 000E36 (2002-09-01) |
| Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer |
| 000E40 (2002-08-15) |
| Imaging of the electronic states of self-assembled InxGa1-xAs quantum dots by scanning tunneling spectroscopy |
| 000E44 (2002-07-15) |
| Line narrowing in single semiconductor quantum dots: Toward the control of environment effects |
| 000E50 (2002-06-17) |
| Temperature dependence of intersublevel absorption in InAs/GaAs self-assembled quantum dots |
| 000E52 (2002-06-15) |
| Photoluminescence quenching of a low-pressure metal-organic vapor-phase-epitaxy grown quantum dots array with bimodal inhomogeneous broadening |
| 000E56 (2002-06-10) |
| Space degradation of multijunction solar cells: An electroluminescence study |
| 000E65 (2002-05-13) |
| Carbon reactivation kinetics in the base of heterojunction GaInP-GaAs bipolar transistors |
| 000E69 (2002-04-15) |
| Disorder-induced photoluminescence up-conversion in InAs/GaAs quantum-dot samples |
| 000E72 (2002-03-15) |
| Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots |
| 000E78 (2002-02-15) |
| Far-infrared magnetospectroscopy of polaron states in self-assembled InAs/GaAs quantum dots |
| 000E80 (2002-01-28) |
| Photonic-crystal ultrashort bends with improved transmission and low reflection at 1.55 μm |
| 000E82 (2002-01-21) |
| Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes |
| 000E83 (2002-01-15) |
| Efficient acoustic phonon broadening in single self-assembled InAs/GaAs quantum dots |
| 000F18 (2002) |
| Structural characterization of InGaAs/InP heterostructures grown under compressive and tensile stress |
| 000F83 (2002) |
| Magnetic field induced Wigner crystal in two-dimensional electron gas in InGaAs/InP |
| 000F95 (2002) |
| Influence of the InAs coverage on the phonon-assisted recombination in InAs/GaAs quantum dots |
| 001039 (2002) |
| Cascaded photonic crystal guides and cavities: Spectral studies and their impact on integrated optics design : Feature section on photonic crystal structures and applications |
| 001069 (2001-10-22) |
| Wide-range-tunable laterally coupled distributed feedback lasers based on InGaAsP-InP |
| 001073 (2001-10-01) |
| Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots |
| 001076 (2001-09-17) |
| Structural effects of the thermal treatment on a GaInNAs/GaAs superlattice |
| 001078 (2001-09-15) |
| Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures |
| 001091 (2001-07) |
| Absorbant saturable ultra-rapide à base de multipuits quantiques InGaAs/InP dopés Fer pour la régénération optique à 1.55μm |
| 001094 (2001-06-15) |
| Polarization of the interband optical dipole in InAs/GaAs self-organized quantum dots |
| 001095 (2001-06-15) |
| Luttinger-like parameter calculations |
| 001100 (2001-05-07) |
| Time-resolved probing of the Purcell effect for InAs quantum boxes in GaAs microdisks |
| 001101 (2001-05-07) |
| Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP (001) by gas-source molecular-beam epitaxy |
