| 000225 (2011) |
| Electronic and Optical Modeling of Solar Cell Compounds CuGaSe2 and CuInSe2 |
| 000295 (2010) |
| Modelling of an InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission by the k.p method |
| 000561 (2008) |
| InAsN/GaSb/InAsN 'W' quantum well laser for mid-infrared emission : from electronic structure to threshold current density calculations |
| 000626 (2007) |
| Structural study and electronic band structure investigations of the solid solution NaxCu1-xIn5S8 and its impact on the Cu(In, Ga)Se2/In2S3 interface of solar cells |
| 000B88 (2004) |
| Alloy effects in Ga1-xInxN/GaN heterostructures |
| 000C10 (2003-11-01) |
| Band structures of GaAs, InAs, and Ge: A 24-k.p model |
| 001126 (2001) |
| Étude des structures électroniques de In2O3 pur et dopé avec l'étain |
| 001456 (2000) |
| Electronic structure of interdiffused GaInAs(P)/GaInAsP quantum wells |
| 001E60 (1996) |
| Valence band structure of very narrow InGaAs/InP quantum wells |
| 002009 (1995-10-15) |
| Dimensionality effects on strain and quantum confinement in lattice-mismatched InAsxP1-x/InP quantum wires |
| 002282 (1994-06) |
| Etude par pompage optique de puits quantiques contraints Ga1-xInxAs/GaAs |
| 000208 (2011) |
| Interfaces as design tools for the InAs/GaSb/InSb short-period superlattice for mid-infrared emission |
| 000288 (2010) |
| Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materials |
| 000379 (2009) |
| Thermoelectric Properties and Electronic Structure of Bi- and Ag-Doped Mg2Si1-xGex Compounds |
| 000450 (2009) |
| Growth study of thin indium nitride layers on InP (10 0) by Auger electron spectroscopy and photoluminescence |
| 000501 (2008) |
| Strain effects of InP/Si and InP/porous Si studied by spectroscopic ellipsometry |
| 000503 (2008) |
| Spatial imaging of valence band electronic structures in a GaSb/InAs quantum well |
| 000799 (2006) |
| Meta-GGA calculation of the electronic structure of group III-V nitrides |
| 000824 (2006) |
| Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN |
| 000909 (2005) |
| Ordering effects on the electronic structures of A1N/GaN, InN/GaN and InN/AlN superlattices |
| 000964 (2005) |
| First-principles study of cubic AlxGa1-xN alloys |
| 000A02 (2005) |
| Crystal symmetry and pressure effects on the valence band structure of γ-InSe and ε-GaSe : Transport measurements and electronic structure calculations |
| 000A21 (2005) |
| Ab initio investigation of potential indium and gallium free chalcopyrite compounds for photovoltaic application |
| 000A55 (2004) |
| X-ray absorption spectra and conduction band structure of In2S3 |
| 000B12 (2004) |
| Modelling of visible and near infrared wavelength quantum well devices made of zinc-blende InxGa1-xN |
| 000C78 (2003) |
| Theoretical analysis of disorder effects on electronic and optical properties of the quaternary alloy In1-xGaxAsySb1-y epilayer on GaSb and InAs |
| 000C96 (2003) |
| Strategy for the design of a non-cryogenic quantum infrared detector |
| 000C98 (2003) |
| Specific features of the electronic structure of III-VI layered semiconductors: recent results on structural and optical measurements under pressure and electronic structure calculations |
| 000D24 (2003) |
| New electronic surface states on In-terminated InAs(0 0 1)4 × 2-c(8 × 2) clean surface |
| 000D54 (2003) |
| In-plane anisotropy of quantum elliptic heterostructures studied with symmetry-adapted Mathieu functions: an application to self-organized InAs quantum dots on InP |
| 000D67 (2003) |
| First-principles investigation of lattice constants and bowing parameters in wurtzite AlxGa1-xN, InxGa1-xN and InxAl1-xN alloys |
| 000E26 (2002-11-01) |
| Monte Carlo simulation of electron transport in narrow gap heterostructures |
| 000E31 (2002-10-15) |
| Band structures of Ge and InAs: A 20 k.p model |
| 000E63 (2002-05-15) |
| Electronic structure of the GaSe/Si(111) and InSe/Si(111) heterojunctions |
| 000E64 (2002-05-13) |
| New Spectroscopy Solves an Old Puzzle: The Kondo Scale in Heavy Fermions |
| 000E74 (2002-03-15) |
| Electronic structure of the layer compounds GaSe and InSe in a tight-binding approach |
| 001139 (2001) |
| Theoretical study of the gap evolution of In2X3 (X = O, S, Se, Te) with lattice compression |
| 001245 (2001) |
| Formation by laser impact of conducting β-Ga2O3-In2O3 solid solutions with composition gradients |
| 001307 (2000-11) |
| Structure électronique des composés lamellaires GaSe, InSe et de leurs interfaces avec Si(111) dans une approche de liaisons fortes |
| 001325 (2000-08-15) |
| All-electron projector-augmented-wave GW approximation: Application to the electronic properties of semiconductors |
| 001560 (1999-06-15) |
| Field-induced diffusion of gold and related phase transformations in the C60 and C70 fullerenes |
| 001587 (1999-03) |
| PROPRIÉTÉS INFRAROUGES DES BOÎTES QUANTIQUES SEMI-CONDUCTRICES InAs/GaAs |
| 001628 (1999) |
| Zn3In2O6 : crystallographic and electronic structure |
| 001659 (1999) |
| Spin-splitting of the subbands of InGaAs-InP and other 'no common atom' quantum wells |
| 001739 (1999) |
| Electronic properties and strain effects in zinc blende GaN and InN |
| 001769 (1999) |
| Band structure of an epitaxial thin film of InSe determined by angle-resolved ultraviolet photoelectron spectroscopy |
| 001926 (1998) |
| Study on momentum density in narrow-gap mixed III-V alloys by positron annihilation under pressure |
| 001A87 (1997-09-15) |
| Mechanical relaxation of strained semiconducting stripes: Influence on optoelectronic properties |
| 001D08 (1997) |
| Band structure of very narrow InGaAs/InP quantum wells with gradual interface effects |
| 001D89 (1996-06-15) |
| Shallow strained InxGa1-xAs/InyGa1-yAs superlattices embedded in p-i-n diodes: Structural properties and optical response |
| 001D94 (1996-06) |
| Modèle de structure de bande et transport électronique en champ fort dans les semiconducteurs «trois-cinq». Application aux matériaux GaAs et InP |
| 001E22 (1996-03-15) |
| Local aspects of the As-stabilized 2×3 reconstructed (001) surface of strained Inx Ga1-xAs alloys: A first-principles study |
| 001E42 (1996) |
| Sur les semi-conducteurs dégénérés |
| 001E66 (1996) |
| The Jahn-Teller effect in the 5T2 state of Fe2+ in III-V materials |
| 001F70 (1996) |
| Binding energies of excitons and charged excitons in GaAs/Ga(In)As quantum dots |
| 002019 (1995-09-15) |
| Theoretical comparison of GaInAs/GaAlInAs and GaInAs/GaInAsP quantum-well lasers |
| 002043 (1995-07) |
| Architectures à clusters dans les composés intermétalliques des éléments des groupes 11, 12 et 13. Elaboration, étude cristallographique et structure électronique |
| 002057 (1995-04-15) |
| Excitonic properties and resonance widths in biased (Ga,In)As-GaAs double quantum wells |
| 002078 (1995-01-15) |
| Optical gain evaluation in GaInAsP quantum-well lasers: A comparison of the different growth techniques |
| 002248 (1994-10) |
| Etude des propriétés électroniques de puits quantiques contraints InAs/InP et InAs/GaAs par spectroscopie optique |
| 002271 (1994-07) |
| Contribution à l'optimisation de structures laser à puits quantiques contraints sur la maille d'InP |
| 002344 (1994) |
| The bulk and surface states of GaSb/AlSb/InAs superlattice |
| 002411 (1994) |
| Experimental density of states for calculation of effective masses and resistivities of trivalent liquid metals |
| 002412 (1994) |
| Excition binding energies and photo-induced tunnelling of carriers in (Ga,In)As-GaAs heterostructures growth with built-in piezoelectric field |
| 002435 (1994) |
| Calculation of the energy levels in InAs/GaAs quantum dots |
| 002436 (1994) |
| Calculated and measured spectral responses in near-infrared of III-V photodetectors based on Ga, In, and Sb |
| 002670 (1993) |
| First-principles study of the electronic structure of γ-InSe and β-InSe |
| 002683 (1993) |
| Electronic structure of crystalline InP oxides |
| 002684 (1993) |
| Electronic structure of (In,Ga)As-(Ga,Al)As strained-layer quantum wells |
| 002685 (1993) |
| Electronic structure and optical properties of (Ga, In)As-(Ga, Al)As quantum wells and superlattices under internal and external strain fields |
| 002788 (1992) |
| band-offset transitivity in strained (001) heterointerfaces |
| 002792 (1992) |
| Uniaxial-stress determination of the symmetry of exciton associated with the miniband dispersion in (Ga,In)As-GaAs superlattices |
| 002826 (1992) |
| Optical transitions involving unconfined energy states in superlattices |
| 002829 (1992) |
| Optical properties and electronic structure of thin (Ga,In)As-AlAs multiple quantum wells and superlattices under internal and external strain fields |
| 002865 (1992) |
| Influence of the spin-orbit split-off valence band in InxGa1-xAs/AlyGa1-yAs strained-layer quantum wells |
| 002913 (1992) |
| Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy |
| 002982 (1991) |
| Quasiparticle calculation of the electronic band structure of the (InAs)1/(GaAs)1 superlattice |
| 002B68 (1990) |
| Electronic structure of semiconductor oxides : InPO4, In(PO3)3, P2O5, SiO2, AlPO4, and Al(PO3)3 |
| 002B69 (1990) |
| Electronic properties of Ga(In)As-based heterostructures |
| 002D33 (1988) |
| Theoretical calculation of band-edge discontinuities near a strained heterojunction: application to (In,Ga)As/GaAs |
| 002D55 (1988) |
| Polaron Landau levels in InSb: a study of the influence of band nonparabolicity |
| 002E27 (1988) |
| Band-edge deformation potentials in a tight-binding framework |
| 002E50 (1987) |
| Modélisation de la barrière de Schottky en présence d'états d'interface distribués spatialement |
| 002E54 (1987) |
| Exciton et polariton dans les semiconducteurs cubiques: étude de la réflectivité |
| 002E85 (1987) |
| Simple excitations in N-layered superlattices |
| 002F32 (1987) |
| Electronic structure of superlattices and quantum wells under uniaxial stress |
| 002F33 (1987) |
| Electronic states and quantum Hall effect in GaSb-InAs-GaSb quantum wells |
| 003001 (1986) |
| Pressure dependence of the electronic effective mass and effective g-factor in the narrow gap semiconductor InSb |
| 003109 (1984) |
| Local-environmental effects on localised states in III-V alloys |
| 000018 (2013) |
| Surface electronic structure of InSb(001)-c(8 × 2) |
| 000022 (2013) |
| Specific heat study of R2RhIn8 (R=Y, La, Lu) compounds |
| 000040 (2013) |
| Nanostructured silicon geometries for directly bonded hybrid III-V-silicon active devices |
| 000043 (2013) |
| Modeling of Dark Current in HgCdTe Infrared Detectors |
| 000045 (2013) |
| Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits |
| 000055 (2013) |
| Frequential and temporal analysis of two-dimensional photonic crystals for absorption enhancement in organic solar cells |
| 000060 (2013) |
| Excitonic properties of wurtzite InP nanowires grown on silicon substrate |
| 000073 (2013) |
| Band parameters of InGaAs/GaAs quantum dots: electronic properties study |
| 000086 (2012) |
| Thermodynamic prediction and experimental verification of optimal conditions for the growth of CuGa0.3In0.7Se2 thin films using close spaced vapor transport technique |
| 000093 (2012) |
| Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures |
| 000096 (2012) |
| Structural, electronic and vibrational properties of InN under high pressure |
