| 000C61 (2003-02-01) |
| Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy |
| 001013 (2002) |
| Formation of 3D InAs quantum dots on InP substrate |
| 001210 (2001) |
| MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers |
| 001259 (2001) |
| Effects of mismatch strain and alloy composition on the formation of inas islands on InAIAs templates : Special issue papers |
| 001339 (2000-04-10) |
| Composition effect on the growth mode, strain relaxation, and critical thickness of tensile Ga1-xInxP layers |
| 001512 (1999-11-29) |
| Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations |
| 001594 (1999-02) |
| MODES DE CROISSANCE DE NANO-STRUCTURES DE SEMI-CONDUCTEURS III-V OBTENUS PAR EPITAXIE : ETUDES PAR MICROSCOPIE ELECTRONIQUE EN TRANSMISSION |
| 001596 (1999-02) |
| Epitaxie par jets chimiques : application à la croissance de structures mixtes arséniures-phosphures et de nitrures d'éléments III |
| 001647 (1999) |
| Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine |
| 001719 (1999) |
| InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps |
| 001721 (1999) |
| Imaging energy analyzer for RHEED : energy filtered diffraction patterns and in situ electron energy loss spectroscopy |
| 001750 (1999) |
| Elastic relaxation phenomena in compressive Ga0.2In0.8As grown on (0 0 1) and (1 1 3)B InP at low lattice mismatch |
| 001880 (1998-03-02) |
| Real time control of InxGa1-xN molecular beam epitaxy growth |
| 001A72 (1997-10-15) |
| Role of surface energy and surface reconstructions on the 2D-to-3D growth-mode transition of strained InxGa1-xAs layers on InP(001) |
| 001C50 (1997) |
| Influence of step edges elastic relaxation on the morphology of compressively and tensilely strained In1-xGaxAs layers epitaxially grown on InP |
| 002017 (1995-10) |
| Caractérisation par Microscopie Electronique en Transmission de la Croissance et de la Relaxation des Structures Epitaxiales Contraintes en Compression dans le Système InGaAs/InP |
| 002168 (1995) |
| InSe/GaSe hterointerfaces prepared by Van der Waals epitaxy |
| 002190 (1995) |
| Elaboration and characterization of InAsSb grown on GaSb and GaAs substrates |
| 000106 (2012) |
| Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires |
| 000434 (2009) |
| Influence of the surface reconstruction on the growth of InP on SrTiO3(0 01) |
| 000935 (2005) |
| MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection |
| 000955 (2005) |
| High In content pseudomorphic InGaAs layers for high-mobility heterostructures on InP (001) |
| 000A13 (2005) |
| CBr4 and be heavily doped InGaAs grown in a production MBE system |
| 000B44 (2004) |
| High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm |
| 000C16 (2003-09-01) |
| Molecular-beam epitaxial growth and characterization of quaternary III-nitride compounds |
| 000C46 (2003-04-07) |
| In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy |
| 000C51 (2003-03-24) |
| GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm |
| 000D42 (2003) |
| Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers |
| 000D49 (2003) |
| Indium surface segregation in AlSb and GaSb |
| 000D55 (2003) |
| In surface segregation in InGaN/GaN quantum wells |
| 000D65 (2003) |
| Formation of InAs islands on InP(3 11)B surface by molecular beam epitaxy |
| 000D72 (2003) |
| Experimental evidence for critical 2D nuclei in the 2D/3D growth mode transition of compressive and tensile strained InGaAs on InP(001) |
| 000D98 (2003) |
| Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire |
| 000E27 (2002-10-28) |
| Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures |
| 001231 (2001) |
| InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties |
| 001271 (2001) |
| Comparison of InAs islands self-assembled on pseudomorphic and metamorphic InAlAs buffer layers grown on GaAs substrate |
| 001297 (2000-12) |
| Préparation par épitaxie par jets moléculaires d'alliages III-V à base de thallium |
| 001312 (2000-10-02) |
| Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy |
| 001330 (2000-07-10) |
| Interplay between segregation, roughness, and local strains in the growth of Ga0.75In0.25P alloy |
| 001349 (2000-02) |
| L'APPROCHE PARAMORPHIQUE : UN NOUVEAU PROCEDE POUR L'HETEROEPITAXIE DE MATERIAUX IDEALEMENT RELAXES. APPLICATION A LA CROISSANCE DE InGaAs ON InP SUBSTRATE |
| 001422 (2000) |
| MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization |
| 001518 (1999-11) |
| Réalisation par épitaxie en phase vapeur par la méthode aux hydrures de puits quantiques contraints InAsxP1-x/InP |
| 001523 (1999-10-15) |
| Indium-modified growth kinetics of cubic and hexagonal GaN in molecular beam epitaxy |
| 001538 (1999-09) |
| Croissance de InGaAs désaccordé sur substrats compliants réalisés par adhésion moléculaire et fusion désalignée |
| 001607 (1999-01) |
| Premiers stades de la relaxation plastique dans les hétérostructures à très faible désaccord de paramètre |
| 001637 (1999) |
| Topographic effect of the misfit dislocation dissociation in threefold symmetry epitaxial systems |
| 001648 (1999) |
| Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates |
| 001668 (1999) |
| Self-organized InAs islands on InP(311)B substrates emitting around 1.55 μm |
| 001711 (1999) |
| Investigation by synchrotron radiation X-ray topography of lattice tilt formation in partially released InGaAs/GaAs compositionally graded layers |
| 001716 (1999) |
| Influence of Te on the morphology of InAs self-assembled nanocrystals |
| 001717 (1999) |
| Indium surface segregation in strained GaInAs quantum wells grown on (1 1 1) GaAs substrates by MBE |
| 001774 (1999) |
| Alloying effects in self-assembled InAs/InP dots |
| 001777 (1999) |
| A gas-source MBE growth study of strained Ga1-xInxP layers on GaAs |
| 001850 (1998-07) |
| Etude de la croissance épitaxiale par jets moléculaires des lamellaires (GaSe, InSe) sur silicium et de ZnSe sur lamellaire |
| 001857 (1998-07) |
| Layer by layer growth mode stabilization and step-edge smoothing of cation-stabilized In1-xGaxAs strained layers grown on InP |
| 001932 (1998) |
| Structural and morphological characteristics of InGaAs/GaAs quantum well structures on tilted (1 1 1)B GaAs grown by MBE |
| 001944 (1998) |
| Reconstructions upon thermal desorption in ultra high vacuum of InSe covered Si(111) surfaces |
| 001A33 (1998) |
| Atomic-scale mapping of local lattice distortions in highly strained coherent islands of InxGa1-xAs/GaAs by high-resolution electron microscopy and image processing |
| 001A91 (1997-09) |
| Etude par microscopie tunnel de la transition 2D-3D lors de la croissance épitaxique de couches contraintes In1-xGaxAs sur InP (001) |
| 001B31 (1997-05-05) |
| Structural study of InAs quantum boxes grown by molecular beam epitaxy on a (001) GaAs-on-Si substrate |
| 001C13 (1997) |
| SEXAFS study of the GaAs/InP interface |
| 001C87 (1997) |
| Effect of methyl surface saturation during growth interruption sequences of metalorganic vapor-phase epitaxy of In0.53Ga0.47As using trimethylarsenic |
| 001D19 (1997) |
| 2D-3D transition in highly strained GaAs/Ga1-xInxAs heterostructures by transmission electron microscopy |
| 001E36 (1996-01) |
| Etude physique et réalisation d'hétérostructures GaInAs/GaAs/GaAlAs sur substrats GaAs (⊥⊥⊥) pour les applications optoélectroniques |
| 001F35 (1996) |
| Growth by OMVPE and X-ray analysis of ZnTe and ZnTe/ZnSe epilayers on III-V substrates |
| 001F59 (1996) |
| Dislocation introduction in the initial stages of MBE growth of highly strained In0.30Ga0.70As/GaAs structures |
| 001F93 (1995-12) |
| Hétérostructures de GaSe et InSe lamellaires sur GaAs(001) et sur Si(111): Préparation et propriétés d'interface |
| 002039 (1995-07) |
| Réalisation d'un super-réseau à contraintes balancées InP/GaAs/GaP/GaAs par Epitaxie par jets moléculaires d'organo-métalliques |
| 002113 (1995) |
| Surfactant-mediated molecular-beam epitaxy of III-V strained-layer heterostructures |
| 002127 (1995) |
| Role of the substrate deoxidation process in the growth of strained InAs/InP heterostructures |
| 002161 (1995) |
| Kinetic expression and study of the growth rate of mismatched (Ga,In)/As/InP structures grown by hydride vapour phase epitaxy |
| 002239 (1994-11) |
| Développement, mise en œuvre, et qualification d'un réacteur spécifique à l'épitaxie par jets moléculaires d'organo-métalliques (EJMOM) |
| 002303 (1994-04) |
| Contribution à l'étude de la croissance de GaSb et d'InAs par epitaxie par jets moléculaires |
| 002314 (1994-02) |
| Phénomènes de surface en croissance épitaxiale fortement contrainte de InxGa1-xAs (x>0,25) sur GaAs(001): relaxation élastique, transition 2D-3D, effet surfactant |
| 002703 (1993) |
| Donor doping of (211) CdTe epilayers and CdTe/CdZnTe piezoelectric heterostructures by molecular beam epitaxy |
| 000113 (2012) |
| Morphological and structural properties of InP/Gd203 nanowires grown by molecular beam epitaxy on silicon substrate |
| 000273 (2010) |
| Recent advances in the MOVPE growth of indium nitride |
| 000296 (2010) |
| Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer |
| 000297 (2010) |
| Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content |
| 000417 (2009) |
| Monolithic integration of InP-based transistors on Si substrates using MBE |
| 000430 (2009) |
| Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy |
| 000448 (2009) |
| HgCdTe p-on-n Focal-Plane Array Fabrication Using Arsenic Incorporation During MBE Growth |
| 000467 (2009) |
| Critical thickness for InAs quantum dot formation on (311)B InP substrates |
| 000666 (2007) |
| MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications |
| 000669 (2007) |
| Interface analysis of InAs/GaSb superlattice grown by MBE |
| 000702 (2007) |
| Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers |
| 000758 (2006) |
| Surface-plasmon resonances in indium nitride with metal-enriched nano-particles |
| 000766 (2006) |
| Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE |
| 000768 (2006) |
| Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE |
| 000827 (2006) |
| Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy |
| 000894 (2005) |
| Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities |
| 000929 (2005) |
| Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5μm on InP(311)B substrates |
| 000943 (2005) |
| Interfacial structure of MBE grown InN on GaN |
| 000953 (2005) |
| High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system |
| 000963 (2005) |
| GSMBE growth of GaInAsP/InP 1.3μm-TM-lasers for monolithic integration with optical waveguide isolator |
| 000968 (2005) |
| Feasibility of III-V on-silicon strain relaxed substrates |
| 000976 (2005) |
| Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates |
| 000995 (2005) |
| Determination of In concentration in InGaAs/GaAs 001 epilayers in the early stage of anisotropic stress relaxation |
| 000A14 (2005) |
| As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system |
| 000A20 (2005) |
| Accurate tuning of emission of GaInAsP/InP heterostructures in multiwafer gas-source molecular-beam epitaxy |
