| 002529 (1993) |
| Time resolved photoluminescence of Cd-doped InSe |
| 002E93 (1987) |
| Radiative decay processes of vanadium ions in III-V compound semiconductors |
| 002735 (1993) |
| Behavior of InP:Fe under high electric field |
| 002828 (1992) |
| Optical properties of Cr3+ and Nd3+ in singly- and doubly-doped barium-indium-gallium-based fluoride glass investigated by time-resolved laser spectroscopy |
| 002A04 (1991) |
| Metal organic molecular beam epitaxy growth of Ga0.5In0.5P/GaAs quantum well structures |
| 002A38 (1991) |
| Excitation mechanisms of rare earth (Yb) luminescence in III-V semiconductors (InP) |
| 002B61 (1990) |
| Fluorescence mechanisms in Tm3+ singly doped and Tm3+, Ho3+ doubly doped indium-based fluoride glasses |
| 002B77 (1990) |
| Electrical and optical properties of rare earth dopants (Yb, Er) in n-type III-V (InP) semiconductors |
| 002C01 (1990) |
| 2.5 μm GaInAsSb lattice-matched to GaSb by liquid phase epitaxy |
| 002C13 (1989) |
| Mesures de temps de vie du positon dans un composé. II-VI: CdTe dopé indium |
| 002C94 (1988 publ. 1989) |
| ESR study of nickel (+ III) and copper (+ III) in fluorides with cryolite or elpasolite-type structure |
| 002D58 (1988) |
| Photoluminescence spectra of Li-intercalated indium selenide |
| 002D92 (1988) |
| High quality ultrathin InAs/GaAs quantum wells grown by standard and low-temperature modulated-fluxes molecular beam epitaxy |
| 002E07 (1988) |
| Erbium implanted in III-V materials |
| 002E26 (1988) |
| Behaviour of erbium implanted in InP |
| 002E99 (1987) |
| Photoluminescence investigation of InGaAS-InP quantum wells |
| 003074 (1985) |
| Growth of ultrapure and Si-doped InP by low pressure metalorganic chemical vapor deposition |
| 002688 (1993) |
| Electron paramagnetic resonance study of the two-dimensional electron gas in Ga1-xAIxSb/InAs single quantum wells |
| 002694 (1993) |
| Electrical conduction in low temperature grown InP |
| 002736 (1993) |
| Band offsets of Ga0.5In0.5P/GaAs single quantum wells from pressure-induced type-II transitions |
| 002747 (1993) |
| A comprehensive optimization of InAlAs molecular beam epitaxy for InGaAs/InAlAs HEMT technology |
| 002810 (1992) |
| Spin orientation by optical pumping in two GaAs/AlxGa1-xAs quantum wells |
| 002876 (1992) |
| InAs/Ga0.47In0.53As quantum wells : a new III-V materials system for light emission in the mid-infrared wavelength range |
| 002897 (1992) |
| Far-infared spectra of indium selenide single crystals |
| 002907 (1992) |
| Electrical behavior of Yb ion in p- and n-type InP |
| 002927 (1992) |
| Characterization of deep level defects in thermally annealed Fe-doped semi-insulating InP by photoinduced current transient spectroscopy |
| 002963 (1991) |
| Tunnel deep level transient spectroscopy on a single quantum well |
| 002969 (1991) |
| The temperature dependence of the inelastic scattering time in metallic n-InP |
| 002986 (1991) |
| Positron trapping in vacancies in indium doped CdTe crystals |
| 002A19 (1991) |
| Hydrogenation of InAs on GaAs heterostructures |
| 002A37 (1991) |
| Experimental analysis of temperature dependence of deep-level capture cross-section properties at the Au oxidized InP interface |
| 002A57 (1991) |
| Deep-level photoluminescence emission in heavily Be-doped CBE-grown InP : an explanation of low Be acceptor activity |
| 002A63 (1991) |
| Confirmation of superconductivity in (InPb)Sr2(YCa)Cu2Oz |
| 002B20 (1990) |
| Parametric analysis of crystal-field effects in rare-earth-metal disilicates doped with trivalent europium |
| 002B23 (1990) |
| Optical properties of In2Se3 phases |
| 002B24 (1990) |
| Optical properties of GaInAs/InP multi-quantum wells grown by low-pressure MOVPE |
| 002B34 (1990) |
| Magnetotransport measurements in GaInP/GaAs heterostructures |
| 002B41 (1990) |
| Interfacial traps in Ga0.47In0.53As/InP heterostructures |
| 002B52 (1990) |
| Identification of the Fe acceptor llevel in Ga0.47In0.53As |
| 002B84 (1990) |
| Concerning lattice defects and defect levels in CuInSe2 and the I-III-VI2 compounds |
| 002B90 (1990) |
| Assessment of Fe-doped semi-insulating InP crystals by scanning photoluminescence measurements |
| 002C17 (1989) |
| Dopage béryllium de couches InGaAs élaborées par épitaxie jet moléculaire: étude de la compensation |
| 002C28 (1989) |
| Two-dimensional quantum corrections to the magnetoconductance of InSe at low temperatures owing to weak localization |
| 002C29 (1989) |
| Two-dimensional conductivity in the layered semiconductor InSe at low temperatures owing to weak localization |
| 002C51 (1989) |
| New investigations on magnetic and neutron diffraction properties of Y2Cu2O5 and related oxides |
| 002C60 (1989) |
| Interactions of In atoms with partial dislocations cores in GaAs: 0.3% In |
| 002C77 (1989) |
| Experimental probing of quantum-well Eigenstates |
| 002C81 (1989) |
| Electrical characterization of as-grown, annealed and indium-doped Hg1-xZnxTe for x near 0.15 |
| 002C90 (1989) |
| Absolute photoionization cross-sections of 3d ions in InP: a comparison between experiment and theory |
| 002D26 (1988) |
| Very high purity InP epilayer grown by metalorganic chemical vapor deposition |
| 002D31 (1988) |
| Time-resolved far-infrared magnetospectroscopy of hydrogenlike impurities in III-V semiconductors |
| 002D56 (1988) |
| Physical parameters of GaInAs/Si3N4 interface states obtained by the conductance method |
| 002D64 (1988) |
| Optical properties of Tm3+ ions in indium-based fluoride glasses |
| 002D77 (1988) |
| Investigations of the quantum photovoltaic effect in InAs-GaSb semiconductor superlattices |
| 002E04 (1988) |
| Experimental investigation on the spin glass dynamics in CdIn0.3Cr1.7S4 from noise measurements |
| 002E08 (1988) |
| Electronic properties of cleaved CdTe(110) surfaces |
| 002E29 (1988) |
| Annealing and doping effects in layered In2Se3 compounds |
| 002E82 (1987) |
| Spectroscopic properties of trivalent chromium in the fluoride garnet Na3In2Li3F12 |
| 002E92 (1987) |
| Recrystallization kinetics pattern in III-V implanted semiconductors |
| 002E98 (1987) |
| Photoluminescence studies of Mg and Hg implanted Ga0,47In0,53As |
| 002F87 (1986) |
| The Anderson transition in a magnetic field: experimental evidence for a new phase diagram |
| 003017 (1986) |
| Indium exodiffusion in annealed GaAs:In crystals |
| 003079 (1984 publ. 1985) |
| Shallow centers in some photovoltaic Cu-III-VI2 compounds |
| 003080 (1984) |
| Spectroscopie du vanadium dans les composés III-V |
| 003105 (1984) |
| Optical absorption studies of plastically deformed InSb |
| 001975 (1998) |
| Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application |
| 002512 (1993) |
| Magnétorésistance de n-CuInSe2 en régime métallique |
| 002531 (1993) |
| Thermal stability of InGaAs/InGaAsP quantum wells |
| 002595 (1993) |
| Optical properties of InSb between 300 and 700 K. II: Magneto-optical experiments |
| 002596 (1993) |
| Optical properties of InSb between 300 and 700 K. I: Temperature dependence of the energy gap |
| 002638 (1993) |
| Intermixing of GaInP/GaAs multiple quantum wells |
| 002669 (1993) |
| Formation of P precipitates during annealing of InP grown by gas source molecular beam epitaxy at low temperature |
| 002695 (1993) |
| Electrical characterization of lattice-mismatched InP/InxGa1-xAs/InP heterostructures and PIN photodiodes grown by LP-MOCVD |
| 002705 (1993) |
| Diffusion of Zn across p-n junctions in Ga0.47In0.53As |
| 002708 (1993) |
| Determination of oxygen and carbon contaminations in InGaAs molecular beam epitaxy using growth interruptions |
| 002710 (1993) |
| Defects in electron irradiated GaInP |
| 002739 (1993) |
| Back-reflection topographic study of mixed cells in LEC-grown GaAs 0.2 at.% In |
| 002780 (1992) |
| Propriétés électriques et optiques de couches minces de ZnO et ZnO dopé à l'indium, obtenues par le procédé Pyrosol |
| 002789 (1992) |
| Well-width dependence of the excitonic lifetime in strained III-V quantum wells |
| 002790 (1992) |
| Use of high purity trimethylindium-trimethylamine adduct in MOVPE of InP |
| 002791 (1992) |
| Universal iron behaviour in Zn-, Cd- and Be-doped p-type InP |
| 002798 (1992) |
| The question of a Hall-insulator state in the resistivity of a bulk semiconductor in very high magnetic fields |
| 002812 (1992) |
| Shubnikov-de Haas oscillations in n-CuInSe2 |
| 002829 (1992) |
| Optical properties and electronic structure of thin (Ga,In)As-AlAs multiple quantum wells and superlattices under internal and external strain fields |
| 002844 (1992) |
| Monolayer-scale optical investigation of segregation effects in semiconductor heterostructures |
| 002854 (1992) |
| Liquid phase epitaxy and characterization of InAs1-x-ySbxPy on (100) InAs |
| 002856 (1992) |
| Investigations of MOCVD-grown AllnAs-InP type II heterostructures |
| 002871 (1992) |
| Indium doping of CdTe and Cd1-xZnxTe by molecular-beam epitaxy : uniformly and planar-doped layers, quantum wells, and superlattices |
| 002879 (1992) |
| In situ characterization of InP surfaces after low-energy hydrogen ion cleaning |
| 002905 (1992) |
| Electrical properties of pure In2O3 and Sn-doped In2O3 single crystals and ceramics |
| 002930 (1992) |
| Can aging phenomena discriminate between the droplet model and a hierarchical description in spin glasses ? |
| 002936 (1992) |
| Copper Weberites : Crystal Structure and Magnetic Investigation of Na2CuGaF7 and Na2CuInF7 |
| 002941 (1991-02) |
| Etude de la croissance du système GaAlInP/GaInP/GaAs par épitaxie en phase vapeur aux organométalliques pour la réalisation de lasers visibles |
| 002950 (1991) |
| Etudes sur la croissance, la structure et la composition de couches minces de ZnO et ZnO dopé à l'indium, obtenues par procédé pyrosol |
| 002955 (1991) |
| Caractérisation : étude électrique et optique de In2O3 en couches minces préparées par évaporation thermique réactive |
| 002961 (1991) |
| Uniformity-optical properties of GaInP-GaAlInP layers grown by MOVPE |
| 002965 (1991) |
| Tin-indium sulfide spinels. X-ray study and evidence of tin mixed-valence from 119Sn Mössbauer spectroscopy |
| 002975 (1991) |
| Strain induced 2D-3D growth mode transition in molecular beam epitaxy of InxGa1-xAs on GaAs (001) |
| 002983 (1991) |
| Protonic conduction in anhydrous oxonium alums stable to 175°C |
| 002993 (1991) |
| Optical investigations of GaAs-GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition |
