| 002928 (1992) |
| Caractérisation du domaine de solution solide de structure spinelle dans le systéme In2S3-Cu2S-CuS |
| 002D01 (1988) |
| Sur les deux phases Sn5,5In11S22 (ou SnIn2S4) et Sn5In14S26 |
| 002D38 (1988) |
| Structure of the orthorhombic phase of Li1+xTi2-xInxP3O12, x=1.08 |
| 002E76 (1987) |
| Substituted lanthanum hexagallates as epitaxial growth substrates |
| 002517 (1993) |
| Découpage du ternaire ytterbium-indium-soufre : description crystallographique des phases présentes |
| 002806 (1992) |
| Structural stuty of tin-doped indium oxide thin films using X-ray absorption spectroscopy and X-ray diffraction. I: Description of the indium site |
| 002807 (1992) |
| Structural study of tin-doped indium oxide thin films using X-ray absorption spectroscopy and X-ray diffractio. II: Tin environment |
| 002926 (1992) |
| Characterization of the single phase region with spinel structure in the ternary system In2S3-FeS-FeS2 |
| 002965 (1991) |
| Tin-indium sulfide spinels. X-ray study and evidence of tin mixed-valence from 119Sn Mössbauer spectroscopy |
| 002974 (1991) |
| Study of CuCaxIn1-xSe2 and CuGaxIn1-xTe2 compounds |
| 002C22 (1989) |
| Contribution à la cristallochimie des isotypes de ThCr2Si2 et CaBe2Ge2. I: Les systèmes LaT2-xT′xGe2 (T,T′=Ru, Rh, Pd, Ir, Pt) et La1-xCaxIr2Ge2: distribution des éléments de transition dans le type CaBe2Ge2 |
| 002C41 (1989) |
| Quantitative evaluation of the surface segregation in III-V ternary alloys by X-ray photoelectron spectroscopy |
| 002D14 (1988) |
| Distribution cationique dans les ferrites d'indium de type spinelle InMFeO4 (M = Ni, Mn, Co, Mg) |
| 002D67 (1988) |
| Neutron powder diffraction study of solid solution Li1+xTi2-xInxP3O12. I: 0.0≤x≤0.4 |
| 002D74 (1988) |
| Mass spectrometric evidence of instability in In1-xGaxAs compounds: activity measurements of InAs |
| 002D94 (1988) |
| Growth of GaInAsSb alloys by MOCVD and characterization of GaInAsSb/GaSb p-n photodiodes |
| 002D96 (1988) |
| Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy |
| 002F17 (1987) |
| Growth conditions and optical properties of InxSe1-x thin films |
| 002F24 (1987) |
| Experimental evidence of difference in surface and bulk compositions of AlxGa1-xAs, AlxIn1-xAs and GaxIn1-xAs epitaxial layers grown by molecular beam epitaxy |
| 002F67 (1986) |
| Synthèse et caractérisation cristallographique d'un système conducteur ionique Li1+xTi2-xInx(PO4)3 |
| 000664 (2007) |
| Magnetic properties of bulk Fe-doped indium oxide |
| 000862 (2006) |
| A study of bulk NaxCu1-xIn5S8 and its impact on the Cu(In,Ga)Se2/In2S3 interface of solar cells |
| 000874 (2005) |
| The magnetic instability of Yb2Pd2(In, Sn) in a non-Fermi liquid environment |
| 000875 (2005) |
| The great potential of coupled substitutions in In2O3 for the generation of bixbyite-type transparent conducting oxides, In2-2xMxSnxO3 |
| 000902 (2005) |
| Physico-chemical characterisation of Cu(In,Al)Se2 thin film for solar cells obtained by a selenisation process |
| 000905 (2005) |
| Phase diagram of high Tc Pb(In1/2Nb1/2)O3-PbTiO3 ceramics |
| 000B50 (2004) |
| Gd(Mn1-xInx)2: crystal structure and physical properties |
| 000D12 (2003) |
| Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence |
| 000D58 (2003) |
| High pressure synchrotron XRD study of the pressure induced structural changes in LaNiInD1.63-x |
| 000D86 (2003) |
| Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE |
| 000D89 (2003) |
| Comparison between numerical simulation and experimental measurement of solute segregation during directional solidification |
| 000F07 (2002) |
| Study of the new β-In2S3 containing Na thin films. Part I: Synthesis and structural characterization of the material |
| 000F08 (2002) |
| Study of low temperature elaborated tailored optical band gap β-In2S3-3xO3x thin films |
| 000F13 (2002) |
| Studies of short-range ordering in amorphous In-Se films by EXAFS |
| 000F56 (2002) |
| On the system silicon-ytterbium: Constitution, crystal chemistry, and physical properties |
| 000F60 (2002) |
| Novel indates Ln2BaIn2O7, n = 2 members of the Ruddlesden-Popper family (Ln = La, Nd) |
| 001033 (2002) |
| Crystallographic characterization and magnetic properties of the MnIn2(1-z)Ga2zSe4 alloy system |
| 001154 (2001) |
| Structural changes induced by Sn, Zr, Al substitution in ZnkIn2Ok+3 transparent conducting oxides powders as deduced by transmission electron microscopy |
| 001240 (2001) |
| Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides |
| 001245 (2001) |
| Formation by laser impact of conducting β-Ga2O3-In2O3 solid solutions with composition gradients |
| 001390 (2000) |
| Sodium mobility in the NASICON series Na1+xZr2-xInx(PO4)3 |
| 001426 (2000) |
| Lithium insertion in copper, indium, tin thiospinels characterized by 119Sn Mössbauer spectroscopy and Rietveld analysis |
| 001506 (1999-12) |
| Instabilité de croissance dans les couches épitaxiées contraintes. Etude par microscopie à effet tunnel du système In1-xGaxAs / InP (001) |
| 001762 (1999) |
| Chemical segregation in vertical bridgman growth of GaInSb alloys |
| 001777 (1999) |
| A gas-source MBE growth study of strained Ga1-xInxP layers on GaAs |
| 001799 (1998-12) |
| CHRISTALLOCHIMIE ET PROPRIETES IONIQUES DE COMPOSES PHOSPHATES AU LITHIUM |
| 001834 (1998-09) |
| Etude des ségrégations solutales à l'intérieur de l'alliage Ga(1-x)InxSb en cours de solidification directionnelle en front plan suivant la méthode de Bridgman |
| 001A33 (1998) |
| Atomic-scale mapping of local lattice distortions in highly strained coherent islands of InxGa1-xAs/GaAs by high-resolution electron microscopy and image processing |
| 001C41 (1997) |
| Low-temperature region of the In-Se system |
| 001C50 (1997) |
| Influence of step edges elastic relaxation on the morphology of compressively and tensilely strained In1-xGaxAs layers epitaxially grown on InP |
| 001C91 (1997) |
| DAFS study of strained III-V epitaxial semiconductors |
| 002017 (1995-10) |
| Caractérisation par Microscopie Electronique en Transmission de la Croissance et de la Relaxation des Structures Epitaxiales Contraintes en Compression dans le Système InGaAs/InP |
| 002314 (1994-02) |
| Phénomènes de surface en croissance épitaxiale fortement contrainte de InxGa1-xAs (x>0,25) sur GaAs(001): relaxation élastique, transition 2D-3D, effet surfactant |
| 002346 (1994) |
| Synthetic, spectroscopic and structural studies on phosphine-stabilised [PPh3, Ph2PCH2PPh2, Ph2P(CH2)4PPh2, (Ph2P)C5H4N] main group element-iron-silicon chain complexes |
| 002383 (1994) |
| Luminescence of Ce3+ in the InxSc1-xBO3 (0≤x≤1) solid solution |
| 002407 (1994) |
| Formation of copper indium diselenide by electrodeposition |
| 002430 (1994) |
| Cross-slip in the first stages of plastic relaxation in InxGa1-xAs/GaAs heterostructures |
| 002495 (1993-03) |
| Etude par microscopie électronique en transmission des mécanismes de relaxlation plastique dans les hétérostructures GaInAs/GaAs |
| 002533 (1993) |
| The optical spectrum of covalent copper (II) in spinel compounds in the In2S3-Cu2S-CuS system |
| 002543 (1993) |
| Structural characterization of two lipophilic tris(tropolonato) gallium(III) and indium(III) complexes of radiopharmaceutical interest |
| 002589 (1993) |
| Optimization of fluoride ion conduction in new fluorite-type anion excess solid solutions involving two substitutional cations |
| 002662 (1993) |
| Growth of InGaAs/GaAs quantum wells with perfectly abrupt interfaces by molecular beam epitaxy |
| 002663 (1993) |
| Growth and characterization of n-type (Te) doped metal organic vapor phase epitaxy GaInSb |
| 002681 (1993) |
| Epitaxial growth of highly strained InxGa1-xAs on GaAs(001) : the role of surface diffusion length |
| 002688 (1993) |
| Electron paramagnetic resonance study of the two-dimensional electron gas in Ga1-xAIxSb/InAs single quantum wells |
| 002701 (1993) |
| Dynamical properties of Ga1-x Inx as solid solutions : influence of local distortion effects |
| 002730 (1993) |
| Carbon doping of GaxIn1-xAs by atmospheric pressure organometallic vapour phase epitaxy |
| 002778 (1992) |
| Un nouveau tellurosilicate lamellaire : InSiTe3 |
| 002803 (1992) |
| Surfactant mediated epitaxial growth of InxGa1-xAs on GaAs (001) |
| 002804 (1992) |
| Structure of lithium tetrafluoroindate |
| 002805 (1992) |
| Structure and magnetic behavior of the Na2NilnF7 weberite |
| 002822 (1992) |
| Phase diagram and lattice parameter values of Hg2x (AgIn)1-xSe2 alloys |
| 002839 (1992) |
| New fast F- ionic conductors in the PbF2-InF3-ZrF4 system |
| 002854 (1992) |
| Liquid phase epitaxy and characterization of InAs1-x-ySbxPy on (100) InAs |
| 002865 (1992) |
| Influence of the spin-orbit split-off valence band in InxGa1-xAs/AlyGa1-yAs strained-layer quantum wells |
| 002869 (1992) |
| Indium fluoride thin films prepared by sublimation under vacuum |
| 002889 (1992) |
| Hg2x(CuIn)1-xSe2 alloys : phase diagram and lattice parameter values |
| 002936 (1992) |
| Copper Weberites : Crystal Structure and Magnetic Investigation of Na2CuGaF7 and Na2CuInF7 |
| 002947 (1991) |
| Mise en évidence de nouveaux matériaux conducteurs ioniques de l'ion F- au sein du système ternaire PbF2-InF3-BiF3 : corrélations entre propriétés électriques et ordre à courte distance |
| 002975 (1991) |
| Strain induced 2D-3D growth mode transition in molecular beam epitaxy of InxGa1-xAs on GaAs (001) |
| 002A00 (1991) |
| Molecular beam epitaxy grown Al(GA)InAs : schottky contacts and deep levels |
| 002A02 (1991) |
| Metalloporphyrins containing σ-bonded nitrogen axial ligands. I, Synthesis and characterization of indium(III) porphyrin complexes. Molecular structures of (4-phenyltetrazolato)- and (5-methyltetrazolato)(2,3,7,8,12,13,17,18-octaethylporphinato)indium(III) |
| 002A11 (1991) |
| Iron affinity for the bixbyite structure type Mössbauer spectroscopy study of (In0-xFex)2O3 and (Sc1-xFex)2 O3 |
| 002A16 (1991) |
| Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys |
| 002A23 (1991) |
| High quality InP and In1-xGaxAsyP1-y grown by gas source MBE |
| 002A63 (1991) |
| Confirmation of superconductivity in (InPb)Sr2(YCa)Cu2Oz |
| 002A73 (1991) |
| A new type of misfit dislocation multiplication process in InxGa1-xAs/GaAs strained-layer superlattices |
| 002A74 (1991) |
| Darstellung und Kristallstruktur von Na28In14Sn15 |
| 002A77 (1990) |
| Structure du sulfure d'etain et d'indium In10Sn6S21 |
| 002A82 (1990) |
| Ordre à courte distance et conductivité ionique au sein de la solution solide Pb1-xInxF2+x |
| 002A88 (1990) |
| Corrélations entre propriétés électriques et ordre à courte distanceau sein de quelques solutions solides basées sur CdF2 et comportant des substituants trivalents |
| 002B39 (1990) |
| Liquid semiconductors |
| 002B40 (1990) |
| Kinetic processes in epitaxy of GaxIn1-xAs on InP(100) by hydride vapour phase epitaxy |
| 002B64 (1990) |
| Evidence of monodimensional clusters in some fluorite-type anion-excess solid solutions : correlation between vacancies and interstitial fluorine anions |
| 002B70 (1990) |
| Electron transport properties of strained InxGa1-xAs |
| 002C04 (1989) |
| Structure du sulfure d'ytterbium et d'indium Yb18In7,33S36 |
| 002C05 (1989) |
| Stabilisation de la structure de InFeO3 par substitution de l'indium et du fer par l'aluminium ou le gallium |
| 002C33 (1989) |
| Structure of tricarbonyl(η-cyclopentadienyl)[(2,3,7,8,12,13,17,18-octaethylporphinato)indio(III)]molybdenum(0) at 100 (5) K |
| 002C34 (1989) |
| Structure of BaCuInF7: the interpretation between a pyrochlore-like edge-sharing network of octahedra and a defect fluorite structure. XI: Complex copper(II) fluorides |
| 002C43 (1989) |
| Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP |
